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Dive into the research topics where Hamed Sadeghian is active.

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Featured researches published by Hamed Sadeghian.


Proceedings of SPIE | 2013

Introduction of a high throughput SPM for defect inspection and process control

Hamed Sadeghian; Norbert Koster; T. C. van den Dool

The main driver for Semiconductor and Bio-MEMS industries is decreasing the feature size, moving from the current state-of-the-art at 22 nm towards 10 nm node. Consequently smaller defects and particles become problematic due to size and number, thus inspecting and characterizing them are very challenging. Existing industrial metrology and inspection methods cannot fulfil the requirements for these smaller features. Scanning probe Microscopy (SPM) has the distinct advantage of being able to discern the atomic structure of the substrate. It can image the 3D topography, but also a variety of material, mechanical and chemical properties. Therefore SPM has been suggested as one of the technologies that can fulfil the future requirements in terms of resolution and accuracy, while being capable of resolving 3D futures. However, the throughput of the current state-of-the-art SPMs are extremely low, as compared to the high-volume manufacturing requirements. This paper presents the development of an architecture[1] for a fully automated high throughput SPM, which can meet the requirements of future process metrology and inspection for 450 mm wafers. The targeted specifications of the concept are 1) inspecting more than 20 sites per wafer, 2) each site with dimension of about 10 × 10 μm2 (scalable to 100 × 100 μm2) and 3) with a throughput of more than 7 wafers per hour, or 70 wafers per hour with a coarse/fine scanning approach. The progress of the high throughput SPM development is discussed and the baseline design of the critical sub-modules and the research issues are presented.


Proceedings of SPIE | 2014

Parallel, Miniaturized Scanning Probe Microscope for Defect Inspection and Review

Hamed Sadeghian; T. C. van den Dool; Will Crowcombe; Rodolf Herfst; Jasper Winters; Geerten Kramer; Norbert Koster

With the device dimensions moving towards the 1X node, the semiconductor industry is rapidly approaching the point where 10 nm defects become critical. Therefore, new methods for improving the yield are emerging, including inspection and review methods with sufficient resolution and throughput. Existing industrial tools cannot anymore fulfill these requirements for upcoming smaller and 3D features, since they are performing at the edge of their performance. Scanning probe microscopy (SPM) has the ability to accurately measure dimensions in the micrometer to nanometer scale. Examples of applications are surface roughness, channel height and width measurement, defect inspection in wafers, masks and flat panel displays. In most of these applications, the target area is very large, and, therefore, the throughput of the measurement plays an important role in the final production cost. Single SPM has never been able to compete with other inspection systems in terms of measurement speed, thus has not fulfilled the industry needs in throughput and cost. Further increase of the speed of the single SPM helps, but it still is far from the required throughput and, therefore, insufficient for high-volume manufacturing. Over the past three years, we have developed a revolutionary concept for a multiple miniaturized SPM heads system, which can inspect and measure many sites in parallel. The very high speed of each miniaturized SPM unit allow the user to scan many areas, each with the size of tens of micrometers, in a few seconds. This paper presents an overview of the technical developments and experimental results of the parallel SPM system for wafer and mask inspection.


Proceedings of SPIE 9231: 30th European Mask and Lithography Conference, Dresden, Germany, 24-25 June 2014 | 2014

High-throughput parallel SPM for metrology, defect, and mask inspection

Hamed Sadeghian; Rodolf Herfst; T. C. van den Dool; Will Crowcombe; Jasper Winters; Geerten Kramer

Scanning probe microscopy (SPM) is a promising candidate for accurate assessment of metrology and defects on wafers and masks, however it has traditionally been too slow for high-throughput applications, although recent developments have significantly pushed the speed of SPM [1,2]. In this paper we present new results obtained with our previously presented high-throughput parallel SPM system [3,4] that showcase two key advances that are required for a successful deployment of SPM in high-throughput metrology, defect and mask inspection. The first is a very fast (up to 40 lines/s) image acquisition and a comparison of the image quality as function of speed. Secondly, a fast approach method: measurements of the scan-head approaching the sample from 0.2 and 1.0 mm distance in under 1.4 and 6 seconds respectively.


Ultramicroscopy | 2018

Mapping buried nanostructures using subsurface ultrasonic resonance force microscopy

Maarten H. van Es; Abbas Mohtashami; Rutger M.T. Thijssen; Daniele Piras; Paul L.M.J. van Neer; Hamed Sadeghian

Nondestructive subsurface nanoimaging of buried nanostructures is considered to be extremely challenging and is essential for the reliable manufacturing of nanotechnology products such as three-dimensional (3D) transistors, 3D NAND memory, and future quantum electronics. In scanning probe microscopy (SPM), a microcantilever with a sharp tip can measure the properties of a surface with nanometer resolution. SPM combined with ultrasound excitation, known as ultrasound SPM, has shown the capability to image buried nanoscale features. In this paper, the development of a modified type of ultrasound SPM called subsurface ultrasonic resonance force microscopy (SSURFM) is reported. The capability and versatility of this method is demonstrated by the subsurface imaging of various samples including rigid structures buried under a soft matrix (aluminum under a polymer), rigid structures buried under multiple layers (aluminum under a polymer and titanium layer), and rigid structures under a rigid matrix (aluminum under silicon oxide). Furthermore, tuning and optimization of the image contrast are reported. The experimental results provide possible new industrial metrology and inspection solutions for nanostructures buried below the surface.


Journal of Applied Physics | 2017

Minimizing tip-sample forces and enhancing sensitivity in atomic force microscopy with dynamically compliant cantilevers

Aliasghar Keyvani; Hamed Sadeghian; Mehmet Selman Tamer; J.F.L. Goosen; Fred van Keulen

Due to the harmonic motion of the cantilever in Tapping Mode Atomic Force Microscopy, it is seemingly impossible to estimate the tip-sample interactions from the motion of the cantilever. Not directly observing the interaction force, it is possible to damage the surface or the tip by applying an excessive mechanical load. The tip-sample interactions scale with the effective stiffness of the probe. Thus, the reduction of the mechanical load is usually limited by the manufacturability of low stiffness probes. However, the one-to-one relationship between spring constant and applied force only holds when higher modes of the cantilever are not excited. In this paper, it is shown that, by passively tuning higher modes of the cantilever, it is possible to reduce the peak repulsive force. These tuned probes can be dynamically more compliant than conventional probes with the same static spring constant. Both theoretical and experimental results show that a proper tuning of dynamic modes of cantilevers reduces the contact load and increases the sensitivity considerably. Moreover, due to the contribution of higher modes, the tuned cantilevers provide more information on the tip-sample interaction. This extra information from the higher harmonics can be used for mapping and possibly identification of material properties of samples.


Proceedings of SPIE | 2016

Simultaneous AFM nano-patterning and imaging for photomask repair

Aliasghar Keyvani; Mehmet Selman Tamer; Maarten H. van Es; Hamed Sadeghian

In this paper we present a new AFM based nano-patterning technique that can be used for fast defect repairing of high resolution photomasks and possibly other high-speed nano-patterning applications. The proposed method works based on hammering the sample with tapping mode AFM followed by wet cleaning of the residuals. On the area where a specific pattern should be written, the tip-sample interaction force is tuned in a controlled manner by changing the excitation frequency of the cantilever without interrupting the imaging process. Using this method several patterns where transferred to different samples with imaging speed. While the pattern was transferred to the sample in each tracing scan line, the patterned sample was imaged in retracing scan line, thus the outcome was immediately visible during the experiment.


Journal of Physics D | 2016

Towards thermal noise free optomechanics

Michael A. Page; C. Zhao; David Blair; L. Ju; Yiqiu Ma; H. Pan; S. Chao; V. P. Mitrofanov; Hamed Sadeghian

Thermal noise generally greatly exceeds quantum noise in optomechanical devices unless the mechanical frequency is very high or the thermodynamic temperature is very low. This paper addresses the design concept for a novel optomechanical device capable of ultrahigh quality factors in the audio frequency band with negligible thermal noise. The proposed system consists of a minimally supported millimeter scale pendulum mounted in a Double End-Mirror Sloshing (DEMS) cavity that is topologically equivalent to a Membrane-in-the-Middle (MIM) cavity. The radiation pressure inside the high-finesse cavity allows for high optical stiffness, cancellation of terms which lead to unwanted negative damping and suppression of quantum radiation pressure noise. We solve for the optical spring dynamics of the system using the Hamiltonian, find the noise spectral density and show that stable optical trapping is possible. We also assess various loss mechanisms, one of the most important being the acceleration loss due to the optical spring. We show that practical devices, starting from a centre-of-mass pendulum frequency of 0.1 Hz, could achieve a maximum quality factor of


Proceedings SPIE Photonics Europe, Metamaterials XI, 7 May 2018, Strasbourg, France | 2018

Metasurface enhanced AFM cantilevers

B. Speet; F. Silvestri; G. Gerini; S. Mashaghi Tabari; Hamed Sadeghian; Allan D. Boardman; Anatoly V. Zayats; Kevin F. MacDonald

10^{14}


Journal of Physics D | 2017

Analysis of contact stiffness in ultrasound atomic force microscopy: three-dimensional time-dependent ultrasound modeling

Daniele Piras; Hamed Sadeghian

with optical spring stiffened frequency 1-10 kHz. Small resonators of mass 1


Proceedings of SPIE | 2015

Transient tip-sample interactions in high-speed AFM imaging of 3D nano structures

Aliasghar Keyvani; Hamed Sadeghian; Hans Goosen; Fred van Keulen

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J.F.L. Goosen

Delft University of Technology

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Fred van Keulen

Delft University of Technology

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Aliasghar Keyvani

Delft University of Technology

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Hans Goosen

Delft University of Technology

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C. Zhao

University of Western Australia

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David Blair

University of Western Australia

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L. Ju

University of Western Australia

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Yiqiu Ma

California Institute of Technology

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S. Chao

National Tsing Hua University

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