Han Htoon

Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots

Photoluminescence blinking—random switching between states of high (ON) and low (OFF) emissivities—is a universal property of molecular emitters found in dyes, polymers, biological molecules and artificial nanostructures such as nanocrystal quantum dots, carbon nanotubes and nanowires. For the past 15 years, colloidal nanocrystals have been used as a model system to study this phenomenon. The occurrence of OFF periods in nanocrystal emission has been commonly attributed to the presence of an additional charge, which leads to photoluminescence quenching by non-radiative recombination (the Auger mechanism). However, this ‘charging’ model was recently challenged in several reports. Here we report time-resolved photoluminescence studies of individual nanocrystal quantum dots performed while electrochemically controlling the degree of their charging, with the goal of clarifying the role of charging in blinking. We find that two distinct types of blinking are possible: conventional (A-type) blinking due to charging and discharging of the nanocrystal core, in which lower photoluminescence intensities correlate with shorter photoluminescence lifetimes; and a second sort (B-type), in which large changes in the emission intensity are not accompanied by significant changes in emission dynamics. We attribute B-type blinking to charge fluctuations in the electron-accepting surface sites. When unoccupied, these sites intercept ‘hot’ electrons before they relax into emitting core states. Both blinking mechanisms can be electrochemically controlled and completely suppressed by application of an appropriate potential.

From amplified spontaneous emission to microring lasing using nanocrystal quantum dot solids

We study different emission regimes in close-packed films of chemically synthesized CdSe nanoparticles [nanocrystal quantum dots (NQDs)]. We observe that the NQD photoluminescence is dominated by excitons and biexcitons, respectively, before and after the threshold for stimulated emission. Furthermore, we demonstrate the regime of microring lasing into sharp, whispering-gallery modes using NQD solids incorporated into microcapillary tubes. This result indicates a feasibility of miniature, solid-state laser devices based on chemically synthesized NQDs.

Lifetime blinking in nonblinking nanocrystal quantum dots

Nanocrystal quantum dots are attractive materials for applications as nanoscale light sources. One impediment to these applications is fluctuations of single-dot emission intensity, known as blinking. Recent progress in colloidal synthesis has produced nonblinking nanocrystals; however, the physics underlying blinking suppression remains unclear. Here we find that ultra-thick-shell CdSe/CdS nanocrystals can exhibit pronounced fluctuations in the emission lifetimes (lifetime blinking), despite stable nonblinking emission intensity. We demonstrate that lifetime variations are due to switching between the neutral and negatively charged state of the nanocrystal. Negative charging results in faster radiative decay but does not appreciably change the overall emission intensity because of suppressed nonradiative Auger recombination for negative trions. The Auger process involving excitation of a hole (positive trion pathway) remains efficient and is responsible for charging with excess electrons, which occurs via Auger-assisted ionization of biexcitons accompanied by ejection of holes.

Light amplification in semiconductor nanocrystals: Quantum rods versus quantum dots

We perform side-by-side comparison of optical gain properties of spherical and elongated nanocrystals (quantum dots and quantum rods, respectively). This comparison indicates that elongated nanoparticles provide several features beneficial for lasing applications, such as enhanced absorption cross sections (and hence reduced lasing threshold and improved photostability), increased optical gain lifetime, and extended optical gain spectral range through the use of transitions that involve both ground and excited electronic states.

Room-temperature single-photon generation from solitary dopants of carbon nanotubes

On-demand single-photon sources capable of operating at room temperature and the telecom wavelength range of 1,300-1,500 nm hold the key to the realization of novel technologies that span from sub-diffraction imaging to quantum key distribution and photonic quantum information processing. Here, we show that incorporation of undoped (6,5) single-walled carbon nanotubes into a SiO2 matrix can lead to the creation of solitary oxygen dopant states capable of fluctuation-free, room-temperature single-photon emission in the 1,100-1,300 nm wavelength range. We investigated the effects of temperature on photoluminescence emission efficiencies, fluctuations and decay dynamics of the dopant states and determined the conditions most suitable for the observation of single-photon emission. This emission can in principle be extended to 1,500 nm by doping of smaller-bandgap single-walled carbon nanotubes. This easy tunability presents a distinct advantage over existing defect centre single-photon emitters (for example, diamond defect centres). Our SiO2-encapsulated sample also presents exciting opportunities to apply Si/SiO2-based micro/nano-device fabrication techniques in the development of electrically driven single-photon sources and integration of these sources into quantum photonic devices and networks.

Effect of shell thickness and composition on blinking suppression and the blinking mechanism in ‘giant’ CdSe/CdS nanocrystal quantum dots

We recently developed an inorganic shell approach for suppressing blinking in nanocrystal quantum dots (NQDs) that has the potential to dramatically improve the utility of these fluorophores for single-NQD tracking of individual molecules in cell biology. Here, we consider in detail the effect of shell thickness and composition on blinking suppression, focusing on the CdSe/CdS core/shell system. We also discuss the blinking mechanism as understood through profoundly altered blinking statistics. We clarify the dependence of blinking behavior and photostability on shell thickness, as well as on interrogation times. We show that, while the thickest-shell systems afford the greatest advantages in terms of enhanced optical properties, thinner-shell NQDs may be adequate for certain applications requiring relatively shorter interrogation times. Shell thickness also determines the sensitivity of the NQD optical properties to aqueous-phase transfer, a critical step in rendering NQDs compatible with bioimaging applications. Lastly, we provide a proof-of-concept demonstration of the utility of these unique NQDs for fluorescent particle tracking.

Suppressed blinking and auger recombination in near-infrared type-II InP/CdS nanocrystal quantum dots.

Nonblinking excitonic emission from near-infrared and type-II nanocrystal quantum dots (NQDs) is reported for the first time. To realize this unusual degree of stability at the single-dot level, novel InP/CdS core/shell NQDs were synthesized for a range of shell thicknesses (~1-11 monolayers of CdS). Ensemble spectroscopy measurements (photoluminescence peak position and radiative lifetimes) and electronic structure calculations established the transition from type-I to type-II band alignment in these heterostructured NQDs. More significantly, single-NQD studies revealed clear evidence for blinking suppression that was not strongly shell-thickness dependent, while photobleaching and biexciton lifetimes trended explicitly with extent of shelling. Specifically, very long biexciton lifetimes-up to >7 ns-were obtained for the thickest-shell structures, indicating dramatic suppression of nonradiative Auger recombination. This new system demonstrates that electronic structure and shell thickness can be employed together to effect control over key single-dot and ensemble NQD photophysical properties.

Electronic Structure and Chemical Nature of Oxygen Dopant States in Carbon Nanotubes

We performed low temperature photoluminescence (PL) studies on individual oxygen-doped single-walled carbon nanotubes (SWCNTs) and correlated our observations to electronic structure simulations. Our experiment reveals multiple sharp asymmetric emission peaks at energies 50-300 meV red-shifted from that of the E11 bright exciton peak. Our simulation suggests an association of these peaks with deep trap states tied to different specific chemical adducts. In addition, oxygen doping is also observed to split the E11 exciton into two or more states with an energy splitting <40 meV. We attribute these states to dark states that are brightened through defect-induced symmetry breaking. While the wave functions of these brightened states are delocalized, those of the deep-trap states are strongly localized and pinned to the dopants. These findings are consistent with our experimental observation of asymmetric broadening of the deep trap emission peaks, which can result from interaction between pinned excitons and one-dimensional phonons. Exciton pinning also increases the sensitivity of the deep traps to the local dielectric environment, leading to a large inhomogeneous broadening. Observations of multiple spectral features on single nanotubes indicate the possibility of different chemical adducts coexisting on a given nanotube.

Intrinsic Line Shape of the Raman 2D-Mode in Freestanding Graphene Monolayers

We report a comprehensive study of the two-phonon intervalley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode line shapes in freestanding graphene. For photon energies in the range 1.53-2.71 eV, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for supported monolayers. The transition between the freestanding and supported cases is mimicked by electrostatically doping freestanding graphene at carrier densities above 2 × 10(11) cm(-2). This result quantitatively demonstrates that low levels of charging can obscure the intrinsically bimodal 2D-mode line shape of monolayer graphene. In pristine freestanding graphene, we observe a broadening of the 2D-mode feature with decreasing photon energy that cannot be rationalized using a simple one-dimensional model based on resonant inner and outer processes. This indicates that phonon wavevectors away from the high-symmetry lines of the Brillouin zone must contribute to the 2D-mode, so that a full two-dimensional calculation is required to properly describe multiphonon-resonant Raman processes.

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

The authors report the optical characteristics of GaSb∕GaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of the QW can significantly alter the emission wavelength up to 1.3μm and emission efficiency. Lasing operation at room temperature is obtained from a 2-mm-long device containing five stacked GaSb QDs in In0.13Ga0.87As QWs at 1.026μm with a threshold current density of 860A∕cm2. The probable lasing transition involves electrons and holes confined in the QW and QDs, respectively, resulting in a large peak modal gain of 45cm−1. A significant blueshift of the electroluminescence peak is observed with increased injection current and suggests a type-II band structure.