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Publication
Featured researches published by Hang Ju Ko.
Optics Express | 2008
Doo Gun Kim; Geum-Yoon Oh; Woon-Kyung Choi; Hyo Jin Kim; Seon Hoon Kim; Hyun Chul Ki; Sang-Taek Kim; Hang Ju Ko; Tae Un Kim; Myoung Hak Yang; Hwe Jong Kim; Jong Chang Yi; Youngchul Chung; Nadir Dagli; Young-Wan Choi
Novel triangular ring resonators combining extremely small multimode-interference (MMI) coupler, low loss total internal reflection (TIR) mirrors, and semiconductor optical amplifiers are reported for the first time. The MMI length of 90 microm is among the shortest reported. The incidence angle of the TIR mirror inside the resonator is 22 degrees. A free-spectral range of approximately 2 nm is observed near 1550 nm along with an on-off ratio of 17 dB. The triangular resonators with a sharp angle are very attractive components due to their promise of compact size and high levels of integration. Therefore, large numbers of resonators can be integrated on a chip to increase functionality in future optical wavelength division multiplexing system.
Japanese Journal of Applied Physics | 2008
Doo Gun Kim; Geum-Yoon Oh; Hyo Jin Kim; Seon Hoon Kim; Hyun Chul Ki; Sangtaek Kim; Hang Ju Ko; Tae Un Kim; Myoung Hak Yang; Hwe Jong Kim; Jong Chang Yi; Nadir Dagli; Young-Wan Choi
The lasing characteristics of three-guide coupled rectangular ring laser containing active and passive sections were investigated numerically and experimentally. The rectangular laser cavity consists of four low-loss total internal reflection mirrors and an output coupler made from three passive coupled waveguides. The laser having active section lengths of 350 µm and total cavity lengths of 780 µm was fabricated. The lasing threshold current in the clockwise circulating direction is approximately 35 mA, while that in the counterclockwise circulating direction is around 40 mA under continuous wave operation. The lasing characteristics are bidirectional operation of the single mode with a side mode suppression ratio better than 27 dB.
Proceedings of SPIE, the International Society for Optical Engineering | 2010
Seon Hoon Kim; Tae Un Kim; Doo Gun Kim; Hyun Chul Ki; Geum-Yoon Oh; Hyo Jin Kim; Hang Ju Ko; Myung-Soo Han; Swook Hann; Hwe Jong Kim
Titanium dioxide (TiO2) thin films were prepared by ion-assisted electron-beam deposition on glass at room temperature and were annealed by rapid thermal annealing in O2 and N2 gas flow. TiO2 thin films annealed in N2 gas flow are (110) rutile phase and (101) anatase phase, but in O2 gas flow are (110) rutile phase. The optical band gaps of the TiO2 thin films are increased to 3.281 eV with annealing treatment of 300 ~ 500 °C in O2 gas flow and to 3.271 eV in N2 gas flow. However, the band gap begins to decrease to 3.277 eV at the annealing temperature of 600 °C in O2 gas flow and to 3.257 eV in N2 gas flow, respectively.
Applied Science and Convergence Technology | 2015
Myung-Soo Han; Dae Hyeon Kim; Hang Ju Ko; Heetae Kim
Optical, electrical and structural properties of VOx/ZnO/VOx thin film are studied. The VOx/ZnO/VOx multilayer is deposited by using a radio frequency (RF) sputtering system. The VOx/ZnO/VOx thin film shows the high temperature coefficient of resistance (TCR) of ?3.12%/℃ and the low sheet resistance of about 80 kΩ/sq at room temperature. The responsivity and detectivity of the bolometer are measured as a function of modulation frequency.
Proceedings of SPIE | 2014
Myung-Soo Han; Dae Hyeon Kim; Hang Ju Ko; Jae Chul Shin; Hyo Jin Kim; Do Gun Kim
In this work, a novel fabrication method for VOx-ZnO multilayers with mixed phase of the VO2 and V2O3 through the diffusion of oxygen by annealing at low temperature is presented. A stable sandwich structure of a VOx/ZnO/VOx multilayer was deposited at room temperature, through the oxygen gas flow rate, by RF sputtering system, and the mixed phase was formed through oxygen diffusion by annealing at O2 atmosphere. The results show that the single phase like multilayer formed by this process has a high TCR of more than -2.5%/K and low resistance of about 100 kohm at room temperature. XRD results for the as-deposited VOx/ZnO/VOx multilayer.
Journal of Nanoscience and Nanotechnology | 2013
Jae Cheol Shin; Do Yang Kim; Jae Hyung Park; Si Duck Oh; Hang Ju Ko; Myung-Soo Han; Jae Hun Kim; Kyoung Jin Choi; Hyo Jin Kim
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW array grown under optimized condition exceeds 1 x 10(8)/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the In(x)Ga(1-x)As nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII | 2010
Hyo Jin Kim; Sou Young Yoo; Hang Ju Ko; Myung Soo Han; Doo Gun Kim; Swook Han; Seon Hoon Kim; Hyun Chul Ki
We studied the energy states in In0.8Ga0.2As SAQDs (self-assembled quantum dots) which depended on W(001) and the misorientation angle of the substrate. Starting materials used in this study were SiO2-patterend exact and 5 degree - off (001) GaAs substrates. In0.8Ga0.2As SAQDs had only ground state emissions for SiO2-patterned exact (001) GaAs substrate, whereas those had ground and excited state emissions for SiO2-patterned 5 degree-off (001) GaAs substrate. These results suggest that discrete nature of the density of states in SAQDs was improved by using SiO2-patterned vicinal (001) GaAs substrate with higher misorientation angle of substrate.
Proceedings of SPIE, the International Society for Optical Engineering | 2010
Doo Gun Kim; Seon Hoon Kim; Hyun Chul Ki; Hyo Jin Kim; Hang Ju Ko; Myung-Soo Han; Swook Hann; Tae Un Kim; Hwe Jong Kim; Geum-Yoon Oh; Young Wan Choi
We proposed the grating coupled surface plasmon resonance (GC-SPR) sensors using ZnO and metallic nanograting structures to enhance the sensitivity of an SPR sensor. The GC-SPR sensors were analyzed using the finitedifference time-domain method. The optimum resonance angles of 49 and 55.5 degrees are obtained in the 150 nm wide grating structure with a period of 300 nm for the ZnO thickness of 30 and 50 nm, respectively. Here, an enhanced evanescent field is obtained due to the surface plasmon on the edge of the bandgap when the ZnO and metallic grating structures are used to excite the surface plasmon.
australian conference on optical fibre technology | 2008
Doo Gun Kim; Geum-Yoon Oh; Woon Kyung Choi; Hyo Jin Kim; Seon Hoon Kim; Hyun Chul Ki; Sangtaek Kim; Hang Ju Ko; Tae Un Kim; Myoung Hak Yang; Hwe Jong Kim; Nadir Dagli; Young Wan Choi
We report fabrication and measurements on novel triangular ring resonators with extremely small multimode interference couplers and total internal reflection mirrors. Free spectral range and on-off ratio are 256 GHz and 14 dB respectively.
australian conference on optical fibre technology | 2008
Tae Un Kim; Seon Hoon Kim; Sang-Taek Kim; Hyun Chul Ki; Myung Hak Yang; Hyo Jin Kim; Hang Ju Ko; Jin Hyeok Kim; Hwe Jong Kim
We present spot and mesh patterns formed with same photo-resist by using ultra-violet laser holographic lithography. The ZnO nano crystal was deposited on patterned Si substrate by hydrothermal method.