Hangwen Guo

Electrophoretic-like Gating Used To Control Metal–Insulator Transitions in Electronically Phase Separated Manganite Wires

Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The results conform to a phenomenological model in which the inherent nanoscale insulating and metallic domains are rearranged through electrophoretic-like processes to open and close percolation channels.

Dynamics of a first-order electronic phase transition in manganites

By reducing an electronically phase-separated manganite (La{sub 1-y}Pr{sub y}){sub x}Ca{sub 1-x}MnO{sub 3} single-crystal thin film to dimensions on the order of the inherent phase domains, it is possible to isolate and monitor the behavior of single domains at a first-order transition. At this critical point, it is possible to study the coexistence, formation, and annihilation processes of discrete electronic phase domains. With this technique, we make several observations on the mechanisms leading to the metal-insulator transition in manganites. We observe that domain formation is emergent and random, the transition process from the metallic phase to the insulating phase takes longer than the reverse process, electric field effects are more influential in driving a phase transition than current-induced electron heating, and single domain transition dynamics can be tuned through careful application of temperature and electric field.

Tuning the Metal-Insulator Transition in Manganite Films through Surface Exchange Coupling with Magnetic Nanodots

In strongly correlated electronic systems, the global transport behavior depends sensitively on spin ordering. We show that spin ordering in manganites can be controlled by depositing isolated ferromagnetic nanodots at the surface. The exchange field at the interface is tunable with nanodot density and makes it possible to overcome dimensionality and strain effects in frustrated systems to greatly increasing the metal-insulator transition and magnetoresistance. These findings indicate that electronic phase separation can be controlled by the presence of magnetic nanodots.

Growth diagram of La0.7Sr0.3MnO3 thin films using pulsed laser deposition

An experimental study was conducted on controlling the growth mode of La0.7Sr0.3MnO3 thin films on SrTiO3 substrates using pulsed laser deposition (PLD) by tuning growth temperature, pressure, and laser fluence. Different thin film morphology, crystallinity, and stoichiometry have been observed depending on growth parameters. To understand the microscopic origin, the adatom nucleation, step advance processes, and their relationship to film growth were theoretically analyzed and a growth diagram was constructed. Three boundaries between highly and poorly crystallized growth, 2D and 3D growth, stoichiometric and non-stoichiometric growth were identified in the growth diagram. A good fit of our experimental observation with the growth diagram was found. This case study demonstrates that a more comprehensive understanding of the growth mode in PLD is possible.

Strain driven anisotropic magnetoresistance in antiferromagnetic La 0.4Sr0.6MnO3

We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1−xSrxMnO3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.

Interface-induced multiferroism by design in complex oxide superlattices

Significance Developments in synthesis and characterizing artificially structured materials have greatly advanced the possibility to explore new states of matter in material science. Recent discoveries show that new quantum states can be achieved at heterointerfaces with various electric and mechanical boundary conditions. It remains an open question of how to design ultrathin layers with properties inaccessible in bulk phases that are amenable to technological applications. In this work, we grow heterostructures with extremely high-quality interfaces shown by state-of-the-art atomically resolved electron microscopy and spectroscopy. This combination allows us to identify an interface-induced structure that stabilizes ferromagnetism. Coupled with theory, we provide a conceptually useful recipe to design low-dimensional materials with unique functionalities, in line with the loop “make, measure, model.” Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La2/3Sr1/3MnO3 (LSMO)/BaTiO3 (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacing with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin–lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin–lattice coupling.

Manipulating the polar mismatch at the LaNiO3/SrTiO3 (111) interface

Heteroepitaxial growth of transition-metal oxide films on the open (111) surface of SrTiO3 results in significant restructuring due to the polar mismatch. Monitoring the structural and composition on an atomic scale of LaNiO3/SrTiO3 (111) interface as a function of processing conditions has enabled the avoidance of the expected polar catastrophe. Using atomically resolved transmission electron microscopy and spectroscopy as well as Low energy electron diffraction, the structure of the thin film, from interface to the surface, has been studied. In this paper, we show that the proper processing can lead to a structure that is ordered, coherent with the substrate without intermediate structural phase. Angle-resolved X-ray photoemission spectroscopy shows that the oxygen content of thin films increases with the film thickness, indicating that the polar mismatch is avoided by the presence of oxygen vacancies.

Designing antiphase boundaries by atomic control of heterointerfaces

Significance The mechancial and transport properties of every material are intimately coupled to the generation and formation of defects. In many systems, the nucleation process of defects is highly unpredictable due to the multiple coexisting nucleation mechanisms. A strategy to design and manipulate defect nucleation and formation can improve our understanding and in principle lead to the ability to control performance. Here we present a simple approach of designing 2D defects—named antiphase boundaries—using an atomic-controlled high-quality interface. These defects have a well-defined origin, location, and nucleation mechanism. Via advanced synthesis technology, atomically resolved electron microscopy, and theory, we reveal that these defects display distinctive properties such as physical merging and antipolar structural phases to potentially achieve memory devices. Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects—antiphase boundaries (APB) —with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La2/3Sr1/3MnO3 thin film grown on Sr2RuO4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory.

Polar compensation at the surface of SrTi O 3 (111)

We have systematically investigated the annealing effect on the structure and composition of the polar surface of SrTiO3 (111), starting with an ex-situ chemical etch. The relative surface concentration between Ti and Sr strongly depends on both the annealing temperature and the oxygen processing. There is a critical annealing temperature at which the maximum concentration ratio of Ti to Sr is achieved, while still maintaining a (1 x 1) surface structure. We demonstrate that with proper processing it is possible to avoid surface reconstruction over a broad temperature range. Our results provide an optimal temperature window for epitaxial film growth.

Interfacial coupling and polarization of perovskite ABO3 heterostructures

Interfaces with subtle difference in atomic and electronic structures in perovskite ABO3 heterostructures often yield intriguingly different properties, yet their exact roles remain elusive. In this article, we report an integrated study of unusual transport, magnetic, and structural properties of Pr0.67Sr0.33MnO3 (PSMO) films and La0.67Sr0.33MnO3 (LSMO) films of various thicknesses on SrTiO3 (STO) substrate. In particular, using atomically resolved imaging and electron energy-loss spectroscopy (EELS), we measured interface related local lattice distortion, BO6 octahedral rotation and cation-anion displacement induced polarization. In the very thin PSMO film, an unexpected interface-induced ferromagnetic polaronic insulator phase was observed during the cubic-to-tetragonal phase transition of the substrate STO, due to the enhanced electron-phonon interaction and atomic disorder in the film. On the other hand, for the very thin LSMO films we observed a remarkably deep polarization in non-ferroelectric STO substrate near the interface. Combining the experimental results with first principles calculations, we propose that the observed deep polarization is induced by an electric field originating from oxygen vacancies that extend beyond a dozen unit-cells from the interface, thus providing important evidence of the role of defects in the emergent interface properties of transition metal oxides.