Hanjie Guo

Li2RhO3: A spin-glassy relativistic Mott insulator

Motivated by the rich interplay among electronic correlation, spin-orbit coupling (SOC), crystal-field splitting, and geometric frustrations in the honeycomb-like lattice, we systematically investigated the electronic and magnetic properties of Li

Magnetic instability induced by Rh doping in the Kondo semiconductor CeRu2Al10

_2

Anisotropic paramagnetism of monoclinic Nd2Ti2O7 single crystals

RhO

Weakly ferromagnetic metallic state in heavily doped Ba1−xKxMn2As2

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Magnetic order in the pyrochlore iridate Nd2Ir2O7probed by muon spin relaxation

. The material is semiconducting with a narrow band gap of

Muon sites in Ce(Ru,Rh)2Al10 investigated by using Density Functional Theory from the view point of electronic potential

\Delta\sim

Emergent order in the spin-frustrated system Dy x Tb 2 − x Ti 2 O 7 studied by ac susceptibility measurements

78 meV, and its temperature dependence of resistivity conforms to 3D variable range hopping mechanism. No long-range magnetic ordering was found down to 0.5 K, due to the geometric frustrations. Instead, single atomic spin-glass behavior below the spin-freezing temperature (

On the origin of the two thermally driven relaxations in diluted spin ice Dy1.6Y0.4Ti2O7

\sim

Study of Charge Carrier Dynamics of P3HT:PCBM Blend for Active Material Solar Cell Using Muon Spin Relaxation

6 K) was observed and its spin dynamics obeys the universal critical slowing down scaling law. First principle calculations suggested it to be a relativistic Mott insulator mediated by both electronic correlation and SOC. With moderate strength of electronic correlation and SOC, our results shed new light to the research of Heisenberg-Kitaev model in realistic materials.

Disappearance of Gapped Mott Insulating Phase Neighboring Bose Glass Phase in Tl1¹xKxCuCl3 Detected by Longitudinal-Field Muon Spin Relaxation

Magnetic ground state of Rh-doped Kondo semiconductor CeRu