Hans-Jürgen Stock

Simultaneous source-mask optimization: a numerical combining method

A new method for simultaneous Source-Mask Optimization (SMO) is presented. In order to produce optimum imaging fidelity with respect to exposure lattitude, depth of focus (DoF) and mask error enhancement factor (MEEF) the presented method aims to leverage both, the available degrees of freedom of a pixelated source and those available for the mask layout. The approach described in this paper is designed as to work with dissected mask polygons. The dissection of the mask patterns is to be performed in advance (before SMO) with the Synopsys Proteus OPC engine, providing the available degrees of freedom for mask pattern optimization. This is similar to mask optimization done for optical proximity correction (OPC). Additionally, however, the illumination source will be simultaneously optimized. The SMO approach borrows many of the performance enhancement methods of OPC software for mask correction, but is especially designed as to simultaneously optimize a pixelated source shape as nowadays available in production environments. Designed as a numerical optimization approach the method is able to assess in acceptable times several hundreds of thousands source-mask combinations for small, critical layout snippets. This allows a global optimization scheme to be applied to the SMO problem which is expected to better explore the optimization space and thus to yield an improved solution quality compared to local optimizations methods. The method is applied to an example system for investigating the impact of source constraints on the SMO results. Also, it is investigated how well possibly conflicting goals of low MEEF and large DoF can be balanced.

Model based hybrid proximity effect correction scheme combining dose modulation and shape adjustments

The authors present a general approach to combine model-based dose modulations and shape modifications into a hybrid proximity effects correction (PEC) scheme for electron beam lithography. The authors simplify this scheme significantly by using an appropriate dose correction strategy. This allows us to use an existing optical proximity correction tool for the shape adjustments. This hybrid PEC scheme is demonstrated by computing corrections for simple test patterns as well as a more complex pattern. The model used corresponds to an electron multibeam tool with an acceleration voltage of 50 kV. It predicts resist contours from a written dose distribution. The authors evaluate the quality of the results both for nominal process conditions and in the presence of process variations. The results are compared against the corresponding results for a correction using only dose modulation. The authors also use the hybrid scheme to compensate intentional overexposure by shape adjustments and include these results ...

Source-mask optimization incorporating a physical resist model and manufacturability constraints

Lithographic process development at small k1 factors requires source-mask optimization (SMO) for obtaining sufficient process stability. Two prerequisites must be fulfilled to directly employ the SMO solutions for the optimized source and mask layouts: i) the simulation model underlying SMO should accurately predict the printing on wafer, and ii) the mask patterns must be manufacturable. With regard to i), SMO including a properly calibrated physical resist model is assumed to be more predictive across variable source and mask shapes than SMO with a computationally fast but simplifying photoresist treatment. By coupling SMO and rigorous lithography simulations, we effectively incorporate physical resist modelling into SMO. Additionally, concerning ii), we tackle the manufacturability task by incorporating mask rule constraints already during SMO. Optimizing the masks degrees of freedom in a mask-rule constrained space, we avoid any post-processing of the optimized mask clips and any corresponding degradation of the result quality. The concept of constrained optimization is also extended to placing and optimizing assist features during SMO. We employ virtual assist feature seeds that can only form real assists if mask rules are met. In that way assist features are simultaneously co-optimized together with the main features and the source.We discuss our approach at 2 examples, a line/space array edge and a SRAM cell, and point to reference1 for a rigorous cell optimization for DRAM.

Large scale model of wafer topography effects

A technique traditionally used for optical proximity correction (OPC) is extended to include topography proximity effects (TPE). Central to this is a thin-mask imaging model capable of addressing very large areas. This compact model being compatible with traditional fast imaging models used in OPC can then be used in standard correction approaches, compensating for both the optical proximity effects and wafer topography proximity effects. Model origin and model form are considered along with calibration process. Capturing ability and performance of the model are numerically evaluated on a number of test patterns. The performance of the model is close to that of models used in the planar case.

Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

A new type of Photosensitized Chemically Amplified Resist (PSCAR) **: “PSCAR 2.0,” is introduced in this paper. PSCAR 2.0 is composed of a protected polymer, a “photo acid generator which can be photosensitized” (PS-PAG), a “photo decomposable base (quencher) which can be photosensitized” (PS-PDB) and a photosensitizer precursor (PP). With this PSCAR 2.0, a photosensitizer (PS) is generated by an extreme ultra-violet (EUV) pattern exposure. Then, during a subsequent flood exposure, PS selectively photosensitizes the EUV exposed areas by the decomposition of a PS-PDB in addition to the decomposition of PS-PAG. As these pattern-exposed areas have the additional acid and reduced quencher concentration, the initial quencher loading in PSCAR 2.0 can be increased in order to get the same target critical dimensions (CD). The quencher loading is to be optimized simultaneously with a UV flood exposure dose to achieve the best lithographic performance and resolution. In this work, the PSCAR performance when different quenchers are used is examined by simulation and exposure experiments with the 16 nm half-pitch (HP) line/space (L/S, 1:1) patterns. According to our simulation results among resists with the different quencher types, the best performance was achieved by PSCAR 2.0 using PS-PDB with the highest possible chemical gradient resulting in the lowest line width roughness (LWR). PSCAR 2.0 performance has furthermore been confirmed on ASML’s NXE:3300 with TEL’s standalone pre-alpha flood exposure tool at imec. The initial PSCAR 2.0 patterning results on NXE:3300 showed the accelerated photosensitization performance with PS-PDB. From these results, we concluded that the dual sensitization of PS-PAG and PS-PDB in PSCAR 2.0 have a potential to realize a significantly improved resist performance in EUV lithography.

Computational enablement for designs with sub-20nm metal tip to tip using cut shapes from grapho-epitaxy directed self-assembly

This paper presents a design and technology co-optimization (DTCO) study of metal cut formation in the sub-20-nmregime. We propose to form the cuts by applying grapho-epitaxial directed self-assembly. The construction of a DTCO flow is explained and results of a process variation analysis are presented. We examined two different DSA models and evaluated their performance and speed tradeoff. The applicability of each model type in DTCO is discussed and categorized.

EUV resist sensitization and roughness improvement by PSCAR with in-line flood exposure system (Conference Presentation)

Photosensitized Chemically Amplified ResistTM (PSCARTM) **2.0’s advantages and expectations are reviewed in this paper. Alpha PSCAR in-line UV exposure system (“Litho Enhancer”) was newly installed at imec in a Tokyo Electron Ltd. (TELTM)’s CLEAN TRACKTM LITHIUS ProTM Z connected to an ASML’s NXE:3300. Using the Litho Enhancer, PSCAR 2.0 sensitization preliminary results show that suppression of roughness enhancement may occur while sensitivity is increased. The calibrated PSCAR 2.0 simulator is used for prediction of resist formulation and process optimization. The simulation predicts that resist contrast enhancement could be realized by resist formulation and process optimization with UV flood exposure.

Modeling of NTD resist shrinkage

Recent chemically amplified resists used for Negative Tone Development (NTD) processes exhibit a significant amount of resist shrinkage during post-exposure-bake (PEB). Some NTD resists show up to 25% thickness loss during PEB in the exposed regions. A detailed analysis of this and other experimental observations is published elsewhere.1 In particular, it has also been demonstrated that the shrinkage during PEB can have a strong impact on both, the CDs and the resist profile shapes which are formed after Negative Tone Development. We therefore highlight the necessity to augment physical modeling of the PEB process step for these NTD photoresists. To account for the shrinkage process during PEB in lithography simulations we start with the following modeling assumptions: The tendency for shrinkage is due to the collapse of the void space (free volume) which is formed after evaporation of the volatile byproduct of the de-protection reaction. However, this will not only induce a (vertical) resist height loss but causes also lateral displacements inside the resist. This yields distorted concentration profiles of all the species that are typically tracked during PEB simulations. In particular, a distorted degree of protection after PEB will result in resist profiles with tilted sidewall angles and changed CDs. As will be shown these effects are strongly pitch-dependent and must be accounted for in a physical simulation approach as well as in OPC modeling. In this work, we discuss our simulation approach to account for mechanical deformations. Using exemplary simulations, we determine the impact of the main effects which are captured by the model. In order to validate the simulation model, the simulated effect of shrinkage-induced mechanical deformations during PEB on CDs and on resist profiles is compared with experimental data.

Advanced fast 3D DSA model development and calibration for design technology co-optimization

Direct Optimization (DO) of a 3D DSA model is a more optimal approach to a DTCO study in terms of accuracy and speed compared to a Cahn Hilliard Equation solver. DO’s shorter run time (10X to 100X faster) and linear scaling makes it scalable to the area required for a DTCO study. However, the lack of temporal data output, as opposed to prior art, requires a new calibration method. The new method involves a specific set of calibration patterns. The calibration pattern’s design is extremely important when temporal data is absent to obtain robust model parameters. A model calibrated to a Hybrid DSA system with a set of device-relevant constructs indicates the effectiveness of using nontemporal data. Preliminary model prediction using programmed defects on chemo-epitaxy shows encouraging results and agree qualitatively well with theoretical predictions from a strong segregation theory.

Modeling and parameter tuning for templated directed self-assembly

In this paper, we study the impact of topographic guide or template properties on pattern formation in a directed self-assembly (DSA) process. In particular, we investigate the relationship between free energy and defect generation or process robustness, and analyze the influence of guide affinity. The good correlation between experimental and simulation results confirms the role of certain setup parameters and process conditions on the DSA patterning.