Hans Kunz

Formation and suppression of a newly discovered secondary EOS event in HBM test systems

A previously undetected trailing pulse from HBM testers was found to create unexpected gate oxide failures on new technologies. This secondary pulse, which is EOS in nature, is caused by the discharge relay and the parasitics of the charge circuit. This paper investigates this critical phenomenon and establishes the tester improvements to safely suppress the trailing pulse effects.

Engineering optimal high current characteristics of high voltage DENMOS

This paper demonstrates the dramatic improvement in ESD performance of HV DENMOS and LDMOS obtained by using selective drain extension silicide blocking (SBLK). The results are validated through 3D TCAD and TLP measurements on different technologies. Measured D.C. Id-Vd characteristics show minimal performance impact due to the addition of SBLK region.

A PMOSFET ESD failure caused by localized charge injection

A new failure mechanism of PMOSFET devices under ESD conditions is reported and analyzed by investigating various I/O structures. Localized turn-on of the parasitic pnp transistor can be caused by localized charge injection into the body of the PMOSFET. Critical layout parameters affecting this problem are discussed based on 2-D device simulations. A general strategy for avoiding this failure mode is also suggested.