Haonan Si

Fiber-shaped asymmetric supercapacitors with ultrahigh energy density for flexible/wearable energy storage

Fiber-shaped supercapacitors (FSCs) have attracted significant interest owing to their unique advantages of small size, light weight, high flexibility, and capability of being integrated into wearable electronics and smart textiles. Their main limitation, however, is their low energy density when compared with batteries. Here a fiber-shaped asymmetric supercapacitor (FASC) with high energy density has been developed successfully using CNT@ZnO-NWs@MnO2 fibers as the positive electrode and CNT fibers as the negative electrode. Due to the high capacitances and excellent rate performances of CNT@ZnO-NWs@MnO2 fibers and CNT fibers, such an asymmetric cell exhibits superior electrochemical performances. An optimized FASC can be cycled reversibly in the voltage range of 0–1.8 V, and exhibits a maximum energy density of 13.25 μW h cm−2, which is much higher than those reported for fiber-shaped supercapacitors. Owing to the rational structure design, the all-solid-state FASCs demonstrate excellent mechanical and electrochemical stability. Over 1000 bending cycles, 96.7% of the initial capacitance can still be retained.

All-Inorganic Perovskite Quantum Dot-Monolayer MoS2 Mixed-Dimensional van der Waals Heterostructure for Ultrasensitive Photodetector

2D transition metal dichalcogenide (2D-TMD) materials and their van der Waals heterostructures (vdWHs) have inspired worldwide efforts in the fields of electronics and optoelectronics. However, photodetectors based on 2D/2D vdWHs suffer from performance limitations due to the weak optical absorption of their atomically thin nature. In this work, taking advantage of an excellent light absorption coefficient, low-temperature solution-processability, and long charge carrier diffusion length, all-inorganic halides perovskite CsPbI3- x Br x quantum dots are integrated with monolayer MoS2 for high-performance and low-cost photodetectors. A favorable energy band alignment facilitating interfacial photocarrier separation and efficient carrier injection into the MoS2 layer inside the 0D-2D mixed-dimensional vdWHs are confirmed by a series of optical characterizations. Owing to the synergistic effect of the photogating mechanism and the modulation of Schottky barriers, the corresponding phototransistor exhibits a high photoresponsivity of 7.7 × 104 A W-1, a specific detectivity of ≈5.6 × 1011 Jones, and an external quantum efficiency exceeding 107%. The demonstration of such 0D-2D mixed-dimensional heterostructures proposed here would open up a wide realm of opportunities for designing low-cost, flexible transparent, and high-performance optoelectronics.