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Dive into the research topics where Haoran Wen is active.

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Featured researches published by Haoran Wen.


international conference on solid state sensors actuators and microsystems | 2015

Substrate-decoupled silicon disk resonators having degenerate gyroscopic modes with Q in excess of 1-million

Ramin Mirjalili; Haoran Wen; D. E. Serrano; Farrokh Ayazi

This paper details a center-supported solid disk resonator in <;100> single-crystalline-silicon (SCS) that uses a novel substrate decoupling feature to achieve ultra-low dissipation gyroscopic modes with small frequency split. The secondary bulk acoustic wave (BAW) elliptic modes (m = 3) of a 2mm diameter substrate-decoupled disk resonator exhibit quality factor (Q) of ~1.3 M with 40 ppm frequency split (as fabricated) at 2.745 MHz. Q-factor remained in excess of 1 million at pressure levels as high as 500 mTorr. The measured temperature behavior of the Q, which is mostly limited by thermoelastic damping (TED), is in very close agreement with FEM predictions.


Microsystems & Nanoengineering | 2017

Resonant pitch and roll silicon gyroscopes with sub-micron-gap slanted electrodes: Breaking the barrier toward high-performance monolithic inertial measurement units

Haoran Wen; Anosh Daruwalla; Farrokh Ayazi

This paper presents the design, fabrication, and characterization of a novel high quality factor (Q) resonant pitch/roll gyroscope implemented in a 40 μm (100) silicon-on-insulator (SOI) substrate without using the deep reactive-ion etching (DRIE) process. The featured silicon gyroscope has a mode-matched operating frequency of 200 kHz and is the first out-of-plane pitch/roll gyroscope with electrostatic quadrature tuning capability to fully compensate for fabrication non-idealities and variation in SOI thickness. The quadrature tuning is enabled by slanted electrodes with sub-micron capacitive gaps along the (111) plane created by an anisotropic wet etching. The quadrature cancellation enables a 20-fold improvement in the scale factor for a typical fabricated device. Noise measurement of quadrature-cancelled mode-matched devices shows an angle random walk (ARW) of 0.63° √h−1 and a bias instability of 37.7° h−1, partially limited by the noise of the interface electronics. The elimination of silicon DRIE in the anisotropically wet-etched gyroscope improves the gyroscope robustness against the process variation and reduces the fabrication costs. The use of a slanted electrode for quadrature tuning demonstrates an effective path to reach high-performance in future pitch and roll gyroscope designs for the implementation of single-chip high-precision inertial measurement units (IMUs).


international conference on solid state sensors actuators and microsystems | 2017

A 0.5MHz mode-matched pitch or roll annulus gyroscope with nano-gap slanted electrodes for quadrature cancellation

Haoran Wen; Anosh Daruwalla; Farrokh Ayazi

This paper presents, for the first time, the effective quadrature cancellation in a high-frequency pitch or roll bulk acoustic wave (BAW) gyroscope to enable perfect mode-matching for sensitivity improvement and noise reduction. The presented gyroscope has a high operation frequency of 0.5MHz and high translational stiffness for shock and vibration robustness. Quadrature cancellation, which is the biggest challenge in high-performance pitch or roll gyroscopes, is achieved by incorporating nano-gap slanted electrodes through the new HARPSS+ fabrication process, which combines anisotropic wet-etching of silicon with conventional DRIE-based HARPSS process. The HARPSS+ process enables precision capacitive transduction and tuning in all desired orientations, providing tuning coverage over typical process corners and significantly improving the yield of pitch or roll gyroscopes. Quadrature cancellation is verified on fabricated devices, allowing a perfectly mode-matched operation with a scale factor of 95.2pA/(°/s) and an open-loop bandwidth of 15Hz. The HARPS S+ process also enables simultaneous fabrication of single-chip tri-axial BAW gyroscopes: high-frequency (0.5–5MHz) gyroscopic modes with high quality factors (10,000s–100,000s) are measured on both yaw and pitch/roll BAW gyroscopes on the same wafer.


international conference on micro electro mechanical systems | 2016

HARPSS-fabricated nano-gap comb-drive for efficient linear actuation of high frequency BAW resonators

Haoran Wen; Anosh Daruwalla; Ramin Mirjalili; Farrokh Ayazi


international conference on micro electro mechanical systems | 2018

A high-performance single-chip timing and inertial measurement unit with robust mode-matched gyroscopes

Haoran Wen; Anosh Daruwalla; Yaesuk Jeong; Pranav Gupta; Jaehoo Choi; Chang-Shun Liu; Farrokh Ayazi


international conference on micro electro mechanical systems | 2018

Epitaxially-grown thick polysilicon for baw disk resonator gyroscopes with very low dissipation

Anosh Daruwalla; Haoran Wen; Ramin Mirjalili; Farrokh Ayazi


ieee/ion position, location and navigation symposium | 2018

A piezo-capacitive BAW accelerometer with extended dynamic range using a gap-changing moving electrode

Anosh Daruwalla; Haoran Wen; Chang-Shun Liu; Hoon Jeong; Farrokh Ayazi


ieee/ion position, location and navigation symposium | 2018

Wafer-level-packaged HARPSS+ MEMS platform: Integration of robust timing and inertial measurement units (TIMU) on a single chip

Haoran Wen; Anosh Daruwalla; Yaesuk Jeong; Pranav Gupta; Jaehoo Choi; Chang-Shun Liu; Farrokh Ayazi


Archive | 2018

GYROSCOPE ANNULAIRE DE TANGAGE/ROULIS À ÉLECTRODES D'ACCORD EN QUADRATURE INCLINÉES ET PROCÉDÉS DE FABRICATION ASSOCIÉS

Haoran Wen; Farrokh Ayazi; Anosh Daruwalla


IEEE\/ASME Journal of Microelectromechanical Systems | 2018

A High-Frequency Resonant Framed-Annulus Pitch or Roll Gyroscope for Robust High-Performance Single-Chip Inertial Measurement Units

Haoran Wen; Anosh Daruwalla; Chang-Shun Liu; Farrokh Ayazi

Collaboration


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Farrokh Ayazi

Georgia Institute of Technology

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Anosh Daruwalla

Georgia Institute of Technology

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Chang-Shun Liu

Georgia Institute of Technology

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Ramin Mirjalili

Georgia Institute of Technology

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Jaehoo Choi

Georgia Institute of Technology

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Pranav Gupta

Georgia Institute of Technology

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Yaesuk Jeong

Georgia Institute of Technology

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D. E. Serrano

Georgia Institute of Technology

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Hoon Jeong

Georgia Institute of Technology

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Yaesuk Jeong

Georgia Institute of Technology

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