Haruki Kawada

Switching and memory phenomena in Langmuir–Blodgett films

Reproducible memory switching has been observed in metal/ Langmuir–Blodgett (LB) film/metal sandwich structures: LB films consist of organic molecules such as dyes having a number of conjugated bonds. The device switches from a nonconducting off state to a conducting on state via an intermediate state, and it switches directly from the on to the off state within less than 10 ns upon the application of a voltage. Both off‐state and on‐state resistances of the device depend linearly on the number of monolayers, the conduction being predominantly through the LB films.

Electrical memory switching in Langmuir-Blodgett films

Abstract Electrical memory switching has been observed in the metal/Langmuir-Blodgett (LB) film/metal sandwich structure with a noble metal base electrode. Switching from a non-conducting OFF state to a conducting ON state (WRITE operation) and/or switching back to the OFF state (ERASE) are/is possible by applying adequate voltage; however, when the voltage is reduced, both OFF and ON states remain the same. A memory system utilizing an LB film and a scanning tunnelling microscope, has been proposed.

Conducting defects in Langmuir-Blodgett films

Abstract A copper decoration method was employed to visualize the conducting defects in Langmuir-Blodgett (LB) films under an optical microscope. The resulting copper decoration patterns strictly reflected the morphology of the LB films.