Haruo Taguchi

Development of novel carrier using natural zeolite and continuous ethanol fermentation with immobilized Saccharomyces cerevisiae in a bioreactor

A natural zeolite, easily vitrified and blown at 1300 °C with a high porosity and diam. of 5–100 μm, was used to immobilize Saccharomyces cerevisiae at 3.6 × 108 cells ml−1 carrier. When the abilities of natural zeolite carrier were compared with glass beads, the capacity for immobilization and alcohol fermentation activity were, respectively, 2′-fold higher and 1.2-fold higher than that of glass beads. Continuous alcohol fermentation was stable for over 21 d without breakage of the carrier.

Far Infrared Radiating Properties of Natural Zeolite

Recently, the heating technology by far infrared radiation has been being interested in various fields such as industry , agriculture, medical engineering and so on. This is mainly because of its excellent heating efficiency . This paper describes far infrared radiating properties of natural zeolite . The effect of the sintering temperature and kinds of compositions on far infrared radiating properties of natural zeolite are investigated and discussed . The spectral emissivity of natural zeolite was measured at the wavelength range from 2 .5,um to 25,um, at the surface temperature of 400 oC. The spectral emissivity of natural zeolite was compared with those of other oxide-ceramics . As a results, it was found that the spectral emissivity of the natural zeolite was higher , especially in the wavelength range of 2. 5 ,um to 5,um. The sintering temperature influences on the spectral emissivity of natural zeolite . The emissivity below the wavelength of 5am increases with increasing in the sintering temperature. The spectral emissivity in at far infrared region of the mixed oxide-ceramics was found to be corresponding to each components of mono oxide-ceramics .

Electrical properties of TiO/sub 2/ thin film prepared by sol-gel method

TiO/sub 2/ thin films were prepared by the sol-gel method using the metal alkoxides ( Ti (0-i-Pr)/sub 4/ tetra isopropoxi titanium; TIPT). These films crystalline form was changed by the prepared sol condition and the heat treatment temperature. When the ratio (r) of H/sub 2/O to TIPT is 7, the crystalline form is assumed at 400/spl deg/C. On the other hand, the condition for r=1 was at 500/spl deg/C. For both r=1 and 7, the crystalline form was anatase. It was found that the electrical properties of TiO/sub 2/ film became semiconductive with increasing heat treatment temperature.