Heayoung P. Yoon

Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths

Radial n+–p+ junction solar cells composed of densely packed pillar arrays, 25-μm-tall and 7.5 μm in diameter, fabricated from p-type silicon substrates with extremely short minority carrier diffusion lengths are investigated and compared to planar cells. To understand the two times higher AM 1.5 efficiencies of the pillar array cells, dark and light I-V characteristics as well as spectral responses are presented for the two structures. The higher pillar array cell efficiencies are due to the larger short-circuit currents from the larger photon absorption thickness and the shorter carrier collection length, with a significant additional contribution from multiple reflections in the structure.

Crossed-Nanowire Molecular Junctions: A New Multispectroscopy Platform for Conduction-Structure Correlations

We report a crossed-nanowire molecular junction array platform that enables direct measurement of current-voltage-temperature characteristics simultaneously with inelastic electron tunneling and Raman vibrational spectra on the same junction. Measurements on dithiol-terminated oligo(phenylene-ethynylene) junctions show both spectroscopies interrogate the gap-confined molecules to reveal distinct molecular features. This versatile platform allows investigation of advanced phenomena such as molecular switching and cooperative effects with the flexible ability to scale both the junction geometries and array sizes.

Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires

Single nanowire radial junction solar cell devices were fabricated using Si nanowires synthesized by Al-catalyzed vapor-liquid-solid growth of the p(+) core (Al auto-doping) and thin film deposition of the n(+)-shell at temperatures below 650 °C. Short circuit current densities of 11.7 mA cm(-2) were measured under 1-sun AM1.5G illumination, showing enhanced optical absorption. The power conversion efficiencies were limited to < 1% by the low open circuit voltage and fill factor of the devices, which was attributed to junction shunt leakage promoted by the high p(+)/n(+) doping. This demonstration of a radial junction device represents an important advance in the use of Al-catalyzed Si nanowire growth for low cost photovoltaics.

High-resolution photocurrent microscopy using near-field cathodoluminescence of quantum dots

We report a fast, versatile photocurrent imaging technique to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL) from a homogeneous quantum dot layer. This approach is quantitatively compared with direct measurements of high-resolution Electron Beam Induced Current (EBIC) using a thin film solar cell (n-CdS / p-CdTe). Qualitatively, the observed image contrast is similar, showing strong enhancement of the carrier collection efficiency at the p-n junction and near the grain boundaries. The spatial resolution of the new technique, termed Q-EBIC (EBIC using quantum dots), is determined by the absorption depth of photons. The results demonstrate a new method for high-resolution, sub-wavelength photocurrent imaging measurement relevant for a wide range of applications.

Deconvoluting the influences of 3D structure on the performance of photoelectrodes for solar-driven water splitting

Three-dimensionally (3D) structured photoelectrodes offer a number of potential benefits for solar fuel production compared to conventional planar photoelectrodes, including decreased optical losses, higher surface area for catalysis, easier removal of product species, and enhanced carrier collection efficiency. However, 3D structures can also present challenges, such as lower photovoltage and larger surface recombination. Quantifying and understanding the advantages and disadvantages of 3D structuring can maximize benefits, but this goal is not trivial because the factors that affect photoelectrode performance are intertwined. In this article, we provide an overview of the benefits and challenges of using 3D photoelectrode structures and present a systematic approach for deconvoluting the most common effects of 3D structure on photoelectrode performance. As a basis for this study, metal–insulator–semiconductor (MIS) photoelectrodes consisting of p-Si micro-pillar arrays with well-defined diameter, pitch, and height were fabricated by reactive ion etching (RIE). A general framework for modeling the influences of 3D structure on photoelectrode current–potential performance is presented, and a comparison of the loss mechanisms in 3D and planar photoelectrodes is illustrated using loss analysis diagrams. We expect that most of the measurements and analyses that we demonstrate for MIS photoelectrodes can be applied with equal success to liquid-junction and p–n junction 3D structured photoelectrodes.

Electron beam induced current in the high injection regime.

Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of electron-hole pairs, which may drive the system into nonlinear regimes. An analytic model is presented which describes the EBIC response when the total electron-hole pair generation rate exceeds the rate at which carriers are extracted by the photovoltaic cell, and charge accumulation and screening occur. The model provides a simple estimate of the onset of the high injection regime in terms of the material resistivity and thickness, and provides a straightforward way to predict the EBIC lineshape in the high injection regime. The model is verified by comparing its predictions to numerical simulations in one- and two-dimensions. Features of the experimental data, such as the magnitude and position of maximum collection efficiency versus electron beam current, are consistent with the three-dimensional model.

Depletion region surface effects in electron beam induced current measurements

Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the p-n junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and charged surfaces. For neutral surfaces we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find the experimental data on FIB-prepared Si solar cells is most consistent with a charged surface, and discuss the implications for EBIC experiments on polycrystalline materials.

Parametric study of micropillar array solar cells

Micro/nano pillar arrays are a promising architecture for high-efficiency solar cells that employ inexpensive photovoltaic materials with short minority carrier diffusion lengths (Ln, p). To investigate design tradeoffs of the radial junction array solar cells, we fabricated 25 μm tall c-Si pillar array devices having different diameters and pillar filling ratios. The high-aspect-ratio radial n+-p+ junctions were formed by gas phase diffusion of an n-type dopant into etched p-type Si pillars. The c-Si pillar arrays showed clear rectifying properties. The spectral reflectance decreased as the pillar filling ratio increased from 0.2 to 0.5, and no subsequent decrease was observed above a filling ratio of 0.5. Approximately two times higher cell efficiency was obtained with an 8 μm diameter (<1 Ln) pillar array than with a 32 μm diameter (>3 Ln) pillar array having the same pillar filling ratio.

Faceting control in core-shell GaN micropillars using selective epitaxy

We report on the fabrication of large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. The two-step process consists of inductively coupled plasma (ICP) etching of lithographically patterned GaN-on-Si substrate to produce an array of micropillars followed by selective growth of GaN shells over these pillars using Hydride Vapor Phase Epitaxy (HVPE). The most significant aspect of the study is the demonstration of the sidewall facet control in the shells, ranging from {1101} semi-polar to {1100} non-polar planes, by employing a post-ICP chemical etch and by tuning the HVPE growth temperature. Room-temperature photoluminescence, cathodoluminescence, and Raman scattering measurements reveal substantial reduction of parasitic yellow luminescence as well as strain-relaxation in the core-shell structures. In addition, X-ray diffraction indicates improved crystal quality after the shell formation. This study demonstrates the feasibility of selective epitaxy on micro-/nano- engineered templa...

High-resolution local current measurement of CdTe solar cells

We investigate local electronic properties of CdTe solar cells using electron beam to excite electron-hole pairs and evaluate spatially resolved photocurrent characteristics. Standard semiconductor processes were used to fabricate Ohmic metal contacts on the surface of p-type CdTe / n-type CdS device extracted from a commercial solar panel. An ion milling process was used to prepare cross-sections of the devices. Local injection of carriers was controlled by an acceleration voltage of electron beam (1 kV to 30 kV) in a scanning electron microscope, and the results were correlated with the local morphology, microstructure, and chemical composition of the devices.