Heiko J. Unold

50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power

We have developed a passively mode-locked optically-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) which delivers up to 100 mW of average output power at a repetition rate of 50 GHz in nearly transform-limited 3.3-ps pulses at a wavelength around 960 nm. The high-repetition-rate passive mode locking was achieved with a low-saturation-fluence semiconductor saturable absorber mirror (SESAM) incorporating a single layer of quantum-dots. The output power within a nearly diffraction-limited beam was maximized using a gain structure with a low thermal impedance soldered to a diamond heat spreader. In addition, we systematically optimized the laser resonator to accommodate for the strong thermal lens caused by the optical pumping. We measured the thermal lens dioptric power and present a numerical model which is in good agreement with the measurements and is useful for optimizing resonator designs. The experimental setup is very versatile and its design and construction are discussed in detail

Large-area single-mode VCSELs and the self-aligned surface relief

The effect of mode-profile specific etching of the top layer in selectively oxidized vertical-cavity surface-emitting laser (VCSEL) structures at 850-nm emission wavelength is examined. For high reproducibility, a self-aligned etching technique is demonstrated which aligns surface etch and oxide aperture by only one additional photoresist step. By optimizing layer structure and etch spot size, completely single-mode devices with aperture diameters up to 16 /spl mu/m are obtained. Maximum single-fundamental-mode output power of 3.4 mW at room temperature and over 1 mW at 0/spl deg/C is obtained with a maximum far-field angle of 5.5/spl deg/. Using parameters for etch spot height and diameter, Gaussian beam spot size and phase curvature, the measured diffracted far-field distribution is fitted well over a 20-dB intensity range. The chosen fit parameters therefore enable one to estimate the amount of phase curvature within the VCSEL for different operation currents, which cannot be obtained with available measurement methods.

Improving single-mode VCSEL performance by introducing a long monolithic cavity

We report on the improvement of several selectively oxidized vertical-cavity surface emitting laser characteristics by introducing a long monolithic cavity. The samples compared are grown with various cavity lengths using solid-source MBE. The 980 nm-regime is chosen as emission wavelength to facilitate growth by using binary GaAs cavity spacers. A record high single-transverse mode output power of 5 mW at a series resistance of 98 /spl Omega/ is obtained for a 7-/spl mu/m aperture device with a 4-/spl mu/m cavity spacer. Using an 8-/spl mu/m cavity spacer, devices up to 16-/spl mu/m aperture diameter emit 1.7 mW of single-mode power with a full-width at half-maximum far-field angle below 3.8/spl deg/.

High-power VCSELs: single devices and densely packed 2-D-arrays

We report on vertical-cavity surface-emitting lasers (VCSELs) and laser arrays providing high output powers in the 980-nm wavelength regime. Extensive investigations on size scaling behavior of single top- and bottom-emitting devices concerning fundamental electrooptical and thermal properties show limits of attainable output characteristics. Maximum experimentally achieved continuous-wave (CW) optical output powers at room temperature are 180 and 350 mW for top- and bottom-emitting VCSELs, respectively. Detailed analysis on the thermal interaction between closely spaced elements have been carried out to describe the thermally induced power limitations of two-dimensional arrays. Fabricated heat sunk bottom-emitting arrays of 23 elements and 40-/spl mu/m aperture size of individual elements show output powers of 0.56 W CW at room temperature and 0.8 W actively cooled, resulting in 0.33 kW/cm/sup 2/ and 0.47 kW/cm/sup 2/ maximum spatially averaged optical power density, respectively.

3-Gb/s data transmission with GaAs VCSELs over PCB integrated polymer waveguides

GaAs quantum-well (QW)-based vertical-cavity surface-emitting lasers (VCSELs) at 855-nm emission wavelength are investigated for intraboard polymer waveguide links. We report a 3-Gb/s pseudorandom bit sequence (PRES) nonreturn-to-zero (NRZ) data transmission over about 5-cm long printed circuit board (PCB) integrated multinode polymer waveguide arrays of two different geometries at bit-error rates (BERs) of less than 10/sup -11/.

Investigation of polarization properties of VCSELs subject to optical feedback from an extremely short external cavity-part I: theoretical analysis

A two modes rate equation model for vertical-cavity surface-emitting lasers (VCSELs) subject to optical feedback from an extremely short external cavity (ESEC) is presented. By making use of it we develop a map of bistability to investigate the parametric dependence of polarization properties of VCSELs in such configuration, finding out a periodic dependence of the polarization switching (PS) currents on the ESEC length. By increasing the external mirror reflectivity we can make this periodic dependence stronger and strongly asymmetric providing the possibility to prevent PS for any injection current achieving polarization stabilization in VCSELs. Further numerical simulations with isotropic and non isotropic feedback show how parameters as the compression coefficients, the frequency splitting between the linearly polarized (LP) modes, the differential gain and the top mirror reflection coefficient, affect the map of bistability.

Single-mode, single-polarization VCSELs via elliptical surface etching: experiments and theory

Polarization control in vertical-cavity surface-emitting lasers (VCSELs) has attracted a lot of interest and different techniques have been proposed to achieve it. Among them, one of the most attractive relies on slight modifications of existing and well-behaving devices, i.e., by introducing a noncircular transverse section layer somewhere in the device. Even though experimental verifications of this principle have already been carried out, a theoretical framework to better understand and possibly optimize such devices is still missing. This mainly originates from the need of a fully vectorial and three-dimensional approach. In this paper, we will undertake a joint experimental and theoretical effort: first, we give experimental evidence of polarization control by applying elliptical surface etching. Then, after having validated the vectorial electromagnetic model by comparing numerical and experimental results, we are able for the first time to explain and compare the polarization selection mechanisms and, consequently, to provide guidelines for optimized structures.

10GHz passively mode-locked external-cavity semiconductor laser with 1.4W average output power

We present a 10GHz passively mode-locked vertical external-cavity surface-emitting semiconductor laser (VECSEL) with 1.4W average output power in 6.1ps pulses. The output features a very good pulse quality with a time–bandwidth product of 0.42 in a nearly diffraction-limited beam. This demonstrates that passively mode-locked VECSELs are suitable for generating high powers in high-repetition-rate pulse trains.

Polarization switching induced by phase change in extremely short external cavity vertical-cavity surface-emitting lasers

We experimentally investigate the spectral and polarization properties of vertical-cavity surface-emitting lasers (VCSELs) subject to polarization insensitive optical feedback from an extremely short external cavity (few microns) and find that the wavelength and the current at which the light polarization switches between the two linearly polarized fundamental modes of the VCSEL are periodically modulated with the length of the external cavity. High contrast polarization switching is demonstrated for a quarter-wavelength change of the external cavity length. To explain our experimental findings we suggest a two-mode rate equation VCSEL model that considers the feedback optical field as instantaneous and accounts for multiple roundtrips in the external cavity with different coupling efficiencies back into the laser. Our numerical results are in very good agreement with the experiments.

Single-mode VCSELs

We compare various approaches aiming at large-area high-power single-mode oxidized VCSELs. Stable and reproducible single-mode emission with SMSR (side-mode suppression ratio) greater than 30dB and output powers well above 5mW are reported for the long monolithic cavity and self-aligned shallow surface etching approaches, both of which are suitable for commercial production. Additionally, Photonic Crystal Surface-Emitting Lasers (PCSELs) are introduced, which enable advanced mode control by novel transverse optical guiding techniques.