Hengyu Zhao

Near-infrared ultrabroadband luminescence spectra properties of subvalent bismuth in CsI halide crystals

We observed two ultrabroadband near-infrared (NIR) luminescence bands around 1.2 and 1.5 μm in as-grown bismuth-doped CsI halide crystals, without additional aftertreatment. Dependence of the NIR emission properties on the excitation wavelength and measurement temperature was studied. Two kinds of NIR active centers of subvalent bismuth and color centers were demonstrated to coexist in Bi:CsI crystal. The eye-safe 1.5 μm emission band with an FWHM of 140 nm and lifetime of 213 μs at room temperature makes Bi:CsI crystal promising in the applications of the ultrafast laser and ultrabroadband amplifier.

Study on the effect of heat-annealing and irradiation on spectroscopic properties of Bi:α-BaB 2 O 4 single crystal

The absorption, excitation, and ultrabroadband near-infrared luminescence spectra of Bismuth were investigated in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4)(alpha-BBO) single crystals, respectively. Energy-level diagrams of the near-infrared luminescent centers were fixed. The electronic transition energies of near-infrared active centers are basically consistent with the multiplets of free Bi(+) ions. The minor difference of the energy-level diagrams of Bi(+) ions in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4) crystals can be ascribed to the difference of the local lattice environments. The involved physical and chemical processes were discussed. The effect of Ar-, air-annealing and electron-irradiation on Bi:alpha-BaB(2)O(4) crystal were also investigated.

Near-infrared photoluminescence spectra in Bi-doped CsI crystal: evidence for Bi-valence conversions and Bi ion aggregation

Bi-doped CsI crystals exhibited near-infrared ultra-broadband photoluminescence around 1216 nm and 1560 nm, depending on the bismuth doping levels, which were ascribed to Bi+ and Bi2+ centers, respectively. The crystal chemistry of the Bi3+ to Bi+ reduction and Bi2+ dimer formation in CsI lattice were investigated. Thermal treatments including annealing and quenching were carried out to study the thermal behaviors of the two emission bands. The evolution of absorption and emission spectra of Bi:CsI crystals indicating the Bi-aggregation and valence conversions under thermal activation. The process of Bi aggregation was observed to be a second-order reaction with activation energy of 0.33 eV. Bi2+ was identified as the origin of the 1560 nm emission band with ESR spectra. A simple lattice structure diagram was developed to illustrate the physical processes in Bi:CsI crystals induced by thermal activation.

Nonlocal dark solitons under competing cubic–quintic nonlinearities

We investigate properties of dark solitons under competing nonlocal cubic-local quintic nonlinearities. Analytical results, based on a variational approach and confirmed by direct numerical simulations, reveal the existence of a unique dark soliton solutions with their width being independent of the degree of nonlocality, due to the competing cubic-quintic nonlinearities.

COMMISSION OF ELECTRON COOLER EC-300 FOR HIRFL-CSR

HIRFL-CSR, a new ion accelerator complex, is under construction at IMP, Lanzhou, China. It is equipped with two electron cooling devices. This article describes the commissioning of cooler at electron energy 300 keV. The cooler is one of the new coolers with some unique manufactured in BINP, Russia. It has a new electron gun producing a hollow electron beam, electrostatic bending and a new structure of solenoid coils at the cooling section. The test results of cooler obtained in Novosibirsk and Lanzhou are reported.

Crystal growth, spectroscopic characteristics, and Judd-Ofelt analysis of Dy:Lu2O3 for yellow laser

Dy:Lu2O3 was grown by the float-zone (Fz) method. According to the absorption spectrum, the Judd–Ofelt (JO) parameters Ω 2, Ω 4, and Ω 6 were calculated to be 4.86 × 10−20 cm2, 2.02 × 10−20 cm2, and 1.76 × 10−20 cm2, respectively. The emission cross-section at 574 nm corresponding to the 4F9/2→6H13/2 transition was calculated to be 0.53 × 10−20 cm2. The yellow (4F9/2→6H13/2 transition) to blue (4F9/2→6H15/2 transition) intensity ratio ranges up to 12.9. The fluorescence lifetime of the 4F9/2 energy level was measured to be 112.1 μs. These results reveal that Dy:Lu2O3 is a promising material for use in yellow lasers.

Impact on electron velocity of hollow electron beam in HIRFL-CSR e-cooler system

Cooling efficiency in electron cooling systems is closely related to the velocity of electron. The velocity of electron has offset due to the space charge of the intense electron beam in the drift tube of the cooling section and thus increases the temperature of electrons. In order to minimize this effect, a new type of electron gun is adopted to produce a hollow electron beam in HIRFL-CSR e-cooler project. The hot ion beam is cooled by Coulomb interaction with intense and cold hollow electron beams. Using typical parameters of the CSRm e-cooler, theoretical calculations comparing the impact of the space charge field on electron velocity for solid and hollow electron beam are carried out.