Henri Jaffrès

Spin-polarized current induced switching in Co/Cu/Co pillars

We present experiments of magnetization reversal by spin injection performed on pillar-shaped Co/Cu/Co trilayers. The pillars (200×600 nm2) are fabricated by electron beam lithography and reactive ion etching. Our data for the magnetization reversal at a threshold current confirm previous results on similar pillars. In addition, we present another type of experiment that also clearly evidences the control of the magnetic configuration by the current intensity. Our interpretation is based on a version of the Slonczewski model in which the polarization of the current is calculated in the Valet–Fert model of the giant magnetoresistance with current applied perpendicular to plane.

Towards Two-Dimensional Metallic Behavior at LaAlO3/SrTiO3 Interfaces

Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within approximately 10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than approximately 6x10(13) cm(-2). We discuss the experimental and simulations results in terms of a multiband carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is approximately 16 nm, indicating that the electron gas in on the verge of two dimensionality.

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band.

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this Letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced to a value compatible with the spin diffusion model. More interestingly, the observation in this regime of inverse spin Hall effect in germanium generated by spin pumping and the modulation of the spin signal by a gate voltage clearly demonstrate spin accumulation in the germanium conduction band.

Co-Doped (La,Sr)TiO3−δ: A High Curie Temperature Diluted Magnetic System with Large Spin Polarization

We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La, Sr)TiO(3-delta) (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.

Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers

We fabricated and characterized an optically pumped (100)-oriented InGaAs/GaAsP multiple quantum well Vertical External Cavity Surface Emitting Laser (VECSEL). The structure is designed to allow the integration of a Metal-Tunnel-Junction ferromagnetic spin-injector for future electrical injection. We report here the control at room temperature of the electromagnetic field polarization using optical spin injection in the active medium of the VECSEL. The switching between two highly circular polarization states had been demonstrated using an M-shaped extended cavity in multi-modes lasing. This result witnesses an efficient spin-injection in the active medium of the LASER.

Spin Signal in Metallic Lateral Spin Valves Made by a Multiple Angle Evaporation Technique

We report on the fabrication of metallic lateral spin valves using different evaporation directions for respective ferromagnetic and nonmagnetic materials. In this way, we can fabricate and connect different nanowires through the same resist mask in a single evaporation sequence, avoiding interface contamination. With this technique and by reducing the wire widths down to 50 nm, we obtained spin signals as large as 24 mΩ at 77 K in devices with transparent interfaces. We studied the influence of the nonmagnetic metal. Spin signals are found to be much larger for Al and Cu than for Au-based devices.

Electrical spin injection and detection in molybdenum disulfide multilayer channel

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.

Spin torque and waviness in magnetic multilayers: a bridge between Valet-Fert theory and quantum approaches.

We develop a simple theoretical framework for transport in magnetic multilayers, based on the Landauer-Buttiker scattering formalism and random matrix theory. A simple transformation allows one to go from the scattering point of view to theories expressed in terms of local currents and the electromagnetic potential. In particular, our theory can be mapped onto the well-established classical Valet-Fert theory for collinear systems. For noncollinear systems, in the absence of spin-flip scattering, our theory can be mapped onto the generalized circuit theory. We apply our theory to the angular dependence of spin accumulation and spin torque in noncollinear spin valves.

Non-local electrical spin injection and detection in germanium at room temperature

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a “source” and a well separated “drain.” The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron sp...

Insights into the orbital magnetism of noncollinear magnetic systems

The orbital magnetic moment is usually associated with the relativistic spin-orbit interaction, but recently it has been shown that noncollinear magnetic structures can also be its driving force. This is important not only for magnetic skyrmions, but also for other noncollinear structures, either bulk-like or at the nanoscale, with consequences regarding their experimental detection. In this work we present a minimal model that contains the effects of both the relativistic spin-orbit interaction and of magnetic noncollinearity on the orbital magnetism. A hierarchy of models is discussed in a step-by-step fashion, highlighting the role of time-reversal symmetry breaking for translational and spin and orbital angular motions. Couplings of spin-orbit and orbit-orbit type are identified as arising from the magnetic noncollinearity. We recover the atomic contribution to the orbital magnetic moment, and a nonlocal one due to the presence of circulating bound currents, exploring different balances between the kinetic energy, the spin exchange interaction, and the relativistic spin-orbit interaction. The connection to the scalar spin chirality is examined. The orbital magnetism driven by magnetic noncollinearity is mostly unexplored, and the presented model contributes to laying its groundwork.