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Dive into the research topics where Hercules Simos is active.

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Featured researches published by Hercules Simos.


Journal of Lightwave Technology | 2004

Investigation of a 2R all-optical regenerator based on four-wave mixing in a semiconductor optical amplifier

Hercules Simos; A. Bogris; Dimitris Syvridis

The properties of an all-optical 2R regenerator based on four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) are investigated. The regeneration is based on the nonlinear FWM transfer function and a study of the systems static behavior reveals the operating conditions, under which the transfer function approaches most the ideal, step-like discrimination characteristic function. A fiber Bragg grating (FBG) is employed in order to overcome the SOAs speed limitations due to limited carrier dynamics. The simulations with dynamic input data by means of extinction ratio (ER) and Q-factor calculations, showed satisfactory regenerative behavior up to 40 Gb/s.


Optics Express | 2010

Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: Experimental and theoretical investigation

Maria Ana Cataluna; Daniil I. Nikitichev; Spiros Mikroulis; Hercules Simos; Christos Simos; Charis Mesaritakis; Dimitris Syvridis; Igor L. Krestnikov; Daniil A. Livshits; Edik U. Rafailov

We report a dual-wavelength passive mode locking regime where picosecond pulses are generated from both ground (lambda = 1263 nm) and excited state transitions (lambda = 1180 nm), in a GaAs-based monolithic two-section quantum-dot laser. Moreover, these results are reproduced by numerical simulations which provide a better insight on the dual-wavelength mode-locked operation.


IEEE Photonics Technology Letters | 2005

Ultrafast all-optical AND logic operation based on four-wave mixing in a passive InGaAsP-InP microring resonator

Spiros Mikroulis; Hercules Simos; Eugenia Roditi; Dimitris Syvridis

An all-optical AND logic gate based on the four-wave mixing (FWM) effect in an InGaAsP-InP microring resonator side-coupled to a bus waveguide, is proposed and simulated. Using an ultrafast nonlinear process such as FWM, operation at a bit rate up to 160 Gb/s is demonstrated for the return-to-zero modulation format.


Optics Express | 2012

High peak-power picosecond pulse generation at 1.26 µm using a quantum-dot-based external-cavity mode-locked laser and tapered optical amplifier

Ying Ding; Rodrigo Aviles-Espinosa; Maria Ana Cataluna; Daniil I. Nikitichev; Myke Ruiz; Michael Tran; Y. Robert; Alexandros Kapsalis; Hercules Simos; Charis Mesaritakis; Tianhong Xu; Paolo Bardella; Mattia Rossetti; Igor L. Krestnikov; Daniil A. Livshits; Dimitris Syvridis; M. Krakowski; Pablo Loza-Alvarez; Edik U. Rafailov

In this paper, we present the generation of high peak-power picosecond optical pulses in the 1.26 μm spectral band from a repetition-rate-tunable quantum-dot external-cavity passively mode-locked laser (QD-ECMLL), amplified by a tapered quantum-dot semiconductor optical amplifier (QD-SOA). The laser emission wavelength was controlled through a chirped volume Bragg grating which was used as an external cavity output coupler. An average power of 208.2 mW, pulse energy of 321 pJ, and peak power of 30.3 W were achieved. Preliminary nonlinear imaging investigations indicate that this system is promising as a high peak-power pulsed light source for nonlinear bio-imaging applications across the 1.0 μm - 1.3 μm spectral range.


IEEE Journal of Selected Topics in Quantum Electronics | 2008

Potential of InGaAs/GaAs Quantum Dots for Applications in Vertical Cavity Semiconductor Optical Amplifiers

Miltiadis Vasileiadis; Dimitris Alexandropoulos; M.J. Adams; Hercules Simos; Dimitris Syvridis

The use of InGaAs/GaAs quantum dots (QDs) in vertical cavity semiconductor optical amplifiers (VCSOAs) is proposed and analyzed. The results underline the distinctive differences between practical designs for QD vertical cavity semiconductor lasers and QD-VCSOAs. By means of a QD rate-equation scheme that accounts for both homogeneous and inhomogeneous broadening and the VCSOA cavity characteristics, the effects of material properties are identified. The design routes outlined here ensure the suitability of QD-VCSOAs for high-speed applications (>100 Gb/s) that rely on the fast carrier dynamics.


Journal of Lightwave Technology | 2006

40-gb/s NRZ and RZ operation of an all-optical AND logic gate based on a passive InGaAsP/InP microring resonator

Spiros Mikroulis; Hercules Simos; Eugenia Roditi; Aristides Chipouras; Dimitris Syvridis

The properties of an all-optical AND logic gate based on the four-wave mixing (FWM) effect in an InGaAsP/InP microring resonator side coupled to a bus waveguide are investigated. Using an ultrafast nonlinear process such as FWM, operation at a bit rate of 40 Gb/s is demonstrated for both nonreturn-to-zero (NRZ) and return-to-zero (RZ) modulation formats. The gate operation in terms of microring structural parameters and operating conditions is studied


Journal of Lightwave Technology | 2009

Dynamic Analysis of Crosstalk Performance in Microring-Based Add/Drop Filters

Hercules Simos; Charis Mesaritakis; Dimitris Alexandropoulos; Dimitris Syvridis

In this paper, the impact of the simultaneous presence of input and add signals in add/drop filters realized with microring resonators is numerically investigated. It is shown that the notch spectral response of output ports is responsible for the intraband crosstalk appearing on the dropped signals in add/drop operation. The investigation of the filter performance is performed with modulated signals at both the input and the add port. The analysis highlights the strong competition between the levels of induced intraband crosstalk and the wavelength selectivity at high bit rate add/drop operation, even in higher order filters. Multistage add/drop topologies that address the inefficiencies of the single-stage add/drop filters are proposed, and successful operation at 40 Gbps nonreturn to zero and return to zero signals is numerically demonstrated.


IEEE Journal of Quantum Electronics | 2012

Two-Section Quantum-Dot Mode-Locked Lasers Under Optical Feedback: Pulse Broadening and Harmonic Operation

Hercules Simos; Christos Simos; Charis Mesaritakis; Dimitris Syvridis

In this paper, we numerically investigate the role of gain and absorber dynamics on the operation of monolithic two-section mode-locked quantum-dot lasers under optical feedback. The analysis is carried out by means of a time-domain traveling wave model for propagation in the gain and absorbing sections. The obtained results indicate that in devices with slow dynamics, pulse duration tends to increase significantly with feedback. On the contrary, devices with fast dynamics exhibit an operation that depends primarily on the external cavity length.


Applied Physics Letters | 2010

Pulse width narrowing due to dual ground state emission in quantum dot passively mode locked lasers

Charis Mesaritakis; Christos Simos; Hercules Simos; Spiros Mikroulis; Igor L. Krestnikov; Dimitris Syvridis

We present an experimental investigation of the emission properties of a multisection InGaAs quantum dot passively mode locked laser under dual waveband emission from the ground state (GS). A mode locking regime directly related to the GS splitting has been depicted. It is related to significant pulse width decrease with increasing injection current under dual peak emission from the GS, leading to generation of pulses with increased peak power with respect to the usual device operation.


IEEE Photonics Technology Letters | 2010

Dynamic Properties of a WDM Switching Module Based on Active Microring Resonators

Hercules Simos; Adonis Bogris; Nikos Raptis; Dimitris Syvridis

The switching properties of a resonator consisting of two serially cascaded active microrings (MRs) are reported. The switching is achieved through the variation of the refractive index and the losses of the MRs with current injection, which alters the overall output spectral response. The switch is suitable for optical burst switching systems and metro architectures as it provides fast optical switching in the nanosecond scale with contrast ratio higher than 30 dB for 10-Gb/s intensity modulated signals. The capacity of the switch can be remarkably increased if multiwavelength switching is employed.

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Dimitris Syvridis

National and Kapodistrian University of Athens

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Charis Mesaritakis

National and Kapodistrian University of Athens

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Christos Simos

National and Kapodistrian University of Athens

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Alexandros Kapsalis

National and Kapodistrian University of Athens

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Igor L. Krestnikov

Technical University of Berlin

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Spiros Mikroulis

National and Kapodistrian University of Athens

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Eugenia Roditi

National and Kapodistrian University of Athens

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Adonis Bogris

Technological Educational Institute of Athens

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