Heung Cho Ko

A hemispherical electronic eye camera based on compressible silicon optoelectronics

The human eye is a remarkable imaging device, with many attractive design features. Prominent among these is a hemispherical detector geometry, similar to that found in many other biological systems, that enables a wide field of view and low aberrations with simple, few-component imaging optics. This type of configuration is extremely difficult to achieve using established optoelectronics technologies, owing to the intrinsically planar nature of the patterning, deposition, etching, materials growth and doping methods that exist for fabricating such systems. Here we report strategies that avoid these limitations, and implement them to yield high-performance, hemispherical electronic eye cameras based on single-crystalline silicon. The approach uses wafer-scale optoelectronics formed in unusual, two-dimensionally compressible configurations and elastomeric transfer elements capable of transforming the planar layouts in which the systems are initially fabricated into hemispherical geometries for their final implementation. In a general sense, these methods, taken together with our theoretical analyses of their associated mechanics, provide practical routes for integrating well-developed planar device technologies onto the surfaces of complex curvilinear objects, suitable for diverse applications that cannot be addressed by conventional means.

Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (>10(4)) with an average field effect mobility of ∼4.7 cm(2) V(-1) s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS2 /graphene interface, which is comparable to the MoS2 /metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.

Charge-transfer-based Gas Sensing Using Atomic-layer MoS2

Two-dimensional (2D) molybdenum disulphide (MoS2) atomic layers have a strong potential to be used as 2D electronic sensor components. However, intrinsic synthesis challenges have made this task difficult. In addition, the detection mechanisms for gas molecules are not fully understood. Here, we report a high-performance gas sensor constructed using atomic-layered MoS2 synthesised by chemical vapour deposition (CVD). A highly sensitive and selective gas sensor based on the CVD-synthesised MoS2 was developed. In situ photoluminescence characterisation revealed the charge transfer mechanism between the gas molecules and MoS2, which was validated by theoretical calculations. First-principles density functional theory calculations indicated that NO2 and NH3 molecules have negative adsorption energies (i.e., the adsorption processes are exothermic). Thus, NO2 and NH3 molecules are likely to adsorb onto the surface of the MoS2. The in situ PL characterisation of the changes in the peaks corresponding to charged trions and neutral excitons via gas adsorption processes was used to elucidate the mechanisms of charge transfer between the MoS2 and the gas molecules.

Curvilinear Electronics Formed Using Silicon Membrane Circuits and Elastomeric Transfer Elements

Materials and methods to achieve electronics intimately integrated on the surfaces of substrates with complex, curvilinear shapes are described. The approach exploits silicon membranes in circuit mesh structures that can be deformed in controlled ways using thin, elastomeric films. Experimental and theoretical studies of the micromechanics of such curvilinear electronics demonstrate the underlying concepts. Electrical measurements illustrate the high yields that can be obtained. The results represent significant experimental and theoretical advances over recently reported concepts for creating hemispherical photodetectors in electronic eye cameras and for using printable silicon nanoribbons/membranes in flexible electronics. The results might provide practical routes to the integration of high performance electronics with biological tissues and other systems of interest for new applications.

Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Mechanics of noncoplanar mesh design for stretchable electronic circuits

A noncoplanar mesh design that enables electronic systems to achieve large, reversible levels stretchability (>100%) is studied theoretically and experimentally. The design uses semiconductor device islands and buckled thin interconnects on elastometric substrates. A mechanics model is established to understand the underlying physics and to guide the design of such systems. The predicted buckle amplitude agrees well with experiments within 5.5% error without any parameter fitting. The results also give the maximum strains in the interconnects and the islands, as well as the overall system stretchability and compressibility.

Chemical Sensing of 2D Graphene/MoS2 Heterostructure device

We report the production of a two-dimensional (2D) heterostructured gas sensor. The gas-sensing characteristics of exfoliated molybdenum disulfide (MoS2) connected to interdigitated metal electrodes were investigated. The MoS2 flake-based sensor detected a NO2 concentration as low as 1.2 ppm and exhibited excellent gas-sensing stability. Instead of metal electrodes, patterned graphene was used for charge collection in the MoS2-based sensing devices. An equation based on variable resistance terms was used to describe the sensing mechanism of the graphene/MoS2 device. Furthermore, the gas response characteristics of the heterostructured device on a flexible substrate were retained without serious performance degradation, even under mechanical deformation. This novel sensing structure based on a 2D heterostructure promises to provide a simple route to an essential sensing platform for wearable electronics.

Graphene-based gas sensor: metal decoration effect and application to a flexible device

Roles of metal nanoparticles (NPs) on graphene-based devices were investigated in terms of gas-sensing characteristics of NO2 and NH3, and flexible gas sensing was also realized for future applications. The synergistic combination of metal NPs and graphene modulates the electronic properties of graphene, leading to enhancement of selectivity and sensitivity in gas-sensing characteristics. Introduction of palladium (Pd) NPs on the graphene accumulates hole carriers of graphene, resulting in the gas sensor being sensitized by NH3 gas molecular adsorption. In contrast, aluminum (Al) NPs deplete hole carriers, which dramatically improves NO2 sensitivity. Furthermore, the sensitivity of flexible graphene-based gas sensors was also enhanced via the same approach, even after 104 bending cycles and was maintained after 3 months.

Micromechanics and Advanced Designs for Curved Photodetector Arrays in Hemispherical Electronic-Eye Cameras

The fabrication of a hemispherical electronic-eye camera with optimized designs based upon micromechanical analysis is reported. The photodetector arrays combine layouts with multidevice tiles and extended, non-coplanar interconnects to improve the fill factor and deformability, respectively. Quantitative comparison to micromechanics analysis reveals the key features of these designs. Color images collected with working cameras demonstrate the utility of these approaches.

Bifunctional sensing characteristics of chemical vapor deposition synthesized atomic-layered MoS2

Two-dimensional (2D) molybdenum disulfide (MoS2) atomic layers have a strong potential to be adopted for 2D electronic components due to extraordinary and novel properties not available in their bulk foams. Unique properties of the MoS2, including quasi-2D crystallinity, ultrahigh surface-to-volume, and a high absorption coefficient, have enabled high-performance sensor applications. However, implementation of only a single-functional sensor presents a limitation for various advanced multifunctional sensor applications within a single device. Here, we demonstrate the charge-transfer-based sensitive (detection of 120 ppb of NO2) and selective gas-sensing capability of the chemical vapor deposition synthesized MoS2 and good photosensing characteristics, including moderate photoresponsivity (∼71 mA/W), reliable photoresponse, and rapid photoswitching (<500 ms). A bifunctional sensor within a single MoS2 device to detect photons and gas molecules in sequence is finally demonstrated, paving a way toward a versatile sensing platform for a futuristic multifunctional sensor.