Hideaki Adachi

Ferroelectric (Pb,La)(Zr,Ti)O3 epitaxial thin films on sapphire grown by rf-planar magnetron sputtering

Ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) thin films have been epitaxially grown on the c plane of sapphire by rf‐planar magnetron sputtering. The sputtering conditions were investigated to obtain epitaxial and transparent films. Dielectric, piezoelectric, and electro‐optic properties of the films were measured. Piezoelectricity of the PLZT(28/0/100) film was confirmed and was as strong as that of BaTiO3. Excellent quadratic electro‐optic effects for PLZT(28/0/100) and PLZT(9/65/35) films and a linear electro‐optic effect for PLZT(21/0/100) film were observed at 0.633‐μm wavelength. Epitaxial PLZT thin film on sapphire is presently the most promising material for new functional devices.

Colossal electroresistance of a Pr 0.7 Ca 0.3 Mn O 3 thin film at room temperature

The electronic conduction through a

PLZT thin-film waveguides

{\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}

Electro‐optic effects of (Pb, La)(Zr, Ti)O3 thin films prepared by rf planar magnetron sputtering

thin film is investigated by measurements using dc and pulsed biases. Semiconducting

Low‐temperature process for the preparation of high Tc superconducting thin films

{\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}

Sputtering preparation of ferroelectric PLZT thin films and their optical applications

films sandwiched by electrodes show both hysteretic and asymmetric behaviors in current-voltage characteristics. The observed conduction characteristics exhibit the space-charge-limited-current effect, and the hysteretic behavior can be ascribed to a carrier trapping and detrapping of the trap sites in the manganite. The hysteresis induces a colossal electroresistance (CER) of more than 5000% at room temperature. The CER ratio is independent of the duration time of pulses from an infinite (dc) down to

Pulsed laser deposition of high-quality (K, Na)NbO3 thin films on SrTiO3 substrate using high-density ceramic targets

150\phantom{\rule{0.3em}{0ex}}\mathrm{ns}

Formation of Superconducting Bi-Sr-Ca-Cu-O Thin Films with Controlled c-Axis Lattice Spacings by Multitarget Sputtering

, indicating that the carrier filling of all the traps can be completed within a short time.

A new tupe of crystal structure in the Pb-Pr-Sr-Cu-O system

PLZT thin-film channel waveguides have been successfully formed in ridges by an ion-beam etching process. The electrooptic Kerr coefficients of the waveguides have been newly obtained. We have determined that the electrooptic coefficients R11′ and R12′ were 0.1–0.2 × 10−16 (m/V)2 and 0.01 × 10−16 (m/V)2, respectively, by Mach-Zehnder interferometric measurement. It was confirmed that PLZT channel waveguides were much more efficient than conventional Ti-diffused LiNbO3 waveguides.

Anisotropic thermoelectric properties in layered cobaltite AxCoO2 (A=Sr and Ca) thin films

Epitaxial (Pb, La)(Zr, Ti)O3 thin films were grown successfully on (0001) sapphire substrates at below 600 °C. High quadratic electro‐optic coefficient of 0.8×10−16 (m/V)2 was also obtained at 6328 A. The rf planar magnetron sputtering process improved the quality of the film, which will be suitable for thin‐film integrated optic devices.