Hideki Sunayama

Initial Growth Process of Epitaxially Chemical-vapor-deposited Titanium Dioxide Crystallites

Publisher Summary In recent years, there has been considerable interest in rapid film formation techniques of metal oxides. This interest derives from the outstanding optical and electric properties of these films that consisted of randomly oriented nano-or micro-crystallites. An air-opened reactor operated under an atmospheric pressure was designed for the rapid deposition of polycrystalline titanium dioxide films. The chapter explains that titanium dioxide films were chemically prepared on single crystalline SrTiO 3 by a vapor deposition apparatus operated under atmospheric pressure with titanium tetraisopropoxide. At a substrate temperature of 400oC, titanium dioxide grows epitaxially with a manner of lateral growth of the steps as well as multi-nucleation during initial growth process. Finally, multi-nucleation growth becomes dominant and promotes to grow a number of highly oriented crystallites having well developed facets. X-ray diffractmetry revealed that these crystallites consisted of -oriented anatase type structure.