Hidemasa Mizutani

11.3: Novel Electron-Injection Layers for Top-Emission OLEDs

In this paper, we describe the performances of two types of new electron injection layers (EILs) for OLEDs using Cesium Carbonate (Cs2CO3). The first is a thin Cs2CO3, and the other, a co-evaporated layer of a new electron transport material and Cs2CO3. Devices with these EILs exhibited better electrical properties with Al, Ag or Au cathode than the devices using LiF as EIL and Al as cathode. In addition, we have measured the characteristics of the top-emission OLEDs with the EIL using Cs2CO3, and confirmed the EIL effectiveness for the electron injection even from ITO cathode.

Manipulation of nucleation sites and periods over amorphous substrates

A selective nucleation based crystal growth technique over amorphous substrates is originated. The method manipulates nucleation sites and periods, and hence, controls the grain boundary location by modifying the substrate surface. In Si, Si3 N4 provides artificial nucleation sites, 1–2 μm in diameter, 100 μ m in period, which is surrounded by SiO2 . One Si nucleus is formed exclusively in a small portion of Si3 N4 . The highly faceted and periodically located nuclei grow over SiO2 up to 100 μm in diameter before impingement. A field‐effect transistor fabricated inside the island operates comparably to the bulk Si control.

52.2: High-efficiency RED Organic Light Emitting Material and Device Based on Triplet Emission with Ir Complex

We studied red emissive materials of Ir-complex. We demonstrate high efficiency red OLED devices employing phosphorescent dopant. Ir(piq)3 [Iridium(III)tris(1-phenyl-isoquinolinato-N, C2)] shows maximum emission peak of 623nm and excellent Q.Y with 0.66 compared to Ir(ppy)3 as a unit. Efficiency of the EL device is 8.0 lm/W, 9.3 cd/A at 100cd/m2, 623 lm/W, 8.4 cd/A at 300cd/m2. CIE- coordinate is (0.68,0.33) and it meets NTSC specification.