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Journal of Materials Research | 1998

IMPROVEMENT IN THERMOELECTRIC PROPERTIES OF (ZNO)5IN2O3 THROUGH PARTIAL SUBSTITUTION OF YTTRIUM FOR INDIUM

Masaki Kazeoka; Hidenori Hiramatsu; Won-Seon Seo; Kunihito Koumoto

We first measured the thermoelectric properties of layer-structured homologous compounds, (ZnO) m In 2 O 3 ( m = integer), and reported that they would becomecandidate materials for high-temperature thermoelectric energy conversion. 1– 4 We further tried to improve their thermoelectric properties by partially substituting yttrium for indium in (ZnO) 5 In 2 O 3 . Though the ionic radius of Y 3+ is larger than that of In 3+ , the a -axis (hexagonal system) elongated and c -axis shrank as Y was substituted for In. The thermoelectric properties were found to vary with a varying amount of Y substitution; 3% Y substitution gave rise to the largest thermoelectric figure of merit, i.e., 1.1 - 1.3 × 10 -4 K -1 at 960–1100 K. The abnormal change in the lattice structure by Y substitution was responsible for the unusual behavior of the thermoelectric properties.


Journal of The Japan Society of Powder and Powder Metallurgy | 1997

Thermoelectric Properties of (ZnO)5In2O3Thin Films Prepared by r.f. Sputtering Method

Hidenori Hiramatsu; Hiromichi Ohta; Won-Seon Seo; Kunihito Koumoto


Archive | 2009

P-CHANNEL THIN-FILM TRANSISTOR AND PROCESS FOR PRODUCING THE p-CHANNEL THIN-FILM TRANSISTOR

Hideo Hosono; 細野 秀雄; Toshio Kamiya; 神谷 利夫; Masahiro Hirano; 平野 正浩; Yoichi Ogo; 洋一 小郷; Kenji Nomura; 研二 野村; Hidenori Hiramatsu; 秀典 平松


Archive | 2006

Magnetic semiconductor material

Hideo Hosono; Masahiro Hirano; Hidenori Hiramatsu; Toshio Kamiya; Hiroshi Yanagi; Eiji Motomitsu


Archive | 2009

LAYERED COMPOUND, SUPERCONDUCTOR AND METHOD FOR PRODUCING SAME

Hideo Hosono; Hiroshi Yanagi; Toshio Kamiya; Satoru Matsuishi; Sung-Wng Kim; Seok Gyu Yoon; Hidenori Hiramatsu; Masahiro Hirano; Takatoshi Nomura; Yoichi Kamihara


Archive | 2015

Field-induced superconducting transition at 31 K in insulating FeSe thin film

Kota Hanzawa; Hikaru Sato; Hidenori Hiramatsu; Toshio Kamiya; Hideo Hosono


Archive | 2010

Josephson junction in Co-doped BaFe2As2 epitaxial film on (La, Sr)(Al, Ta)O3 bicrystal substrate

Takayoshi Katase; Yoshihiro Ishimaru; Akira Tsukamoto; Hidenori Hiramatsu; Toshio Kamiya; Keiichi Tanabe; Hideo Hosono


Archive | 2017

Amorphous pnictide semiconductor BaZn 2 As 2 exhibiting high hole mobility

Zewen Xiao; Xiao Zewen; Fan-Yong Ran; 冉. 凡勇; Min Liao; Liao Min; Shigenori Ueda; Hidenori Hiramatsu; 平松 秀典; Hideo Hosono; 細野 秀雄; Toshio Kamiya; 神谷 利夫


Archive | 2016

Zinc nitride compound and method for producing same

史康 大場; Fumiyasu Oba; 細野 秀雄; Hideo Hosono; 秀典 平松; Hidenori Hiramatsu; 日出也 雲見; Hideya Kumomi; 悠 熊谷; Yu Kumagai; 壮史 飯村; Soshi Iimura; 善行 村場; Yoshinori Muraba; リー アラン バートン; Lee A. Burton; 田中 功; Isao Tanaka; 洋陽 日沼; Yoyo Hinuma


Archive | 2014

High critical-current density with less anisotropy from intentionally grown c-axis vortex-pinning centers in BaFe2(As,P)2 epitaxial film

Hikaru Sato; Hidenori Hiramatsu; Toshio Kamiya; Hideo Hosono

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Hideo Hosono

Tokyo Institute of Technology

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Toshio Kamiya

Tokyo Institute of Technology

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Masahiro Hirano

Tokyo Institute of Technology

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Akihiro Maeda

Tokyo Institute of Technology

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