Hidetoshi Nakanishi

Imaging of a Polycrystalline Silicon Solar Cell Using a Laser Terahertz Emission Microscope

We employed a laser terahertz (THz) emission microscope (LTEM) as a novel tool for evaluating solar cells. LTEM images are obtained by exciting a polycrystalline silicon solar cell with femtosecond laser illumination and visualizing the local distribution of the optical response. THz emission signals also provide various types of information, such as the screening effect of the built-in electrical field near pn junctions. These results indicate that this technique can be used to evaluate the local photoelectric conversion efficiency distribution and dynamic behavior of optically excited carriers in solar cells.

Visualization of GaN surface potential using terahertz emission enhanced by local defects.

Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors in energy-efficient power devices. To realize stable and reliable wide-gap semiconductor devices, the basic physical properties, such as the electric properties on the surface and at the interface, should be revealed. Here, we report visualization of terahertz (THz) emission from the surface of GaN, which is excited by ultraviolet femtosecond laser pulses. We found that the THz emission is enhanced by defects related to yellow luminescence, and this phenomenon is explained through the modification of band structures in the surface depletion layer owing to trapped electrons at defect sites. Our results demonstrate that the surface potential in a GaN surface could be detected by laser-induced THz emission. Moreover, this method enables feasible evaluation of the distribution of non-radiative defects, which are undetectable with photoluminescence, and it contributes to the realization normally-off GaN devices.

Laser terahertz emission microscopy studies of a polysilicon solar cell under the illumination of continuous laser light

Abstract. Terahertz wave-emission properties of a polysilicon solar cell excited by femtosecond laser pulses were visualized by laser terahertz emission microscopy (LTEM). The effects on the terahertz emissions of continuous-wave (cw) laser illumination of the solar cell at two wavelengths (808 and 365 nm) were examined under conditions of reverse and zero bias. The amplitude of the terahertz pulses in the presence of illumination was lower than that in its absence, and it decreased with increasing illumination power. The photovoltaic effect was smaller for cw laser illumination at the shorter wavelength. These phenomena can be explained in terms of screening of the electric field in the depletion layer of the p−n junction, as a result of the presence of photoexcited carriers. In addition, the LTEM images permitted the visualization of the crystalline grain structure of the solar cell and the dynamics of photocarriers, and they reflected the local electric field distribution in the cell. LTEM was therefore shown to be a promising technique for the evaluation and inspection of solar cells.

Comparison between laser terahertz emission microscope and conventional methods for analysis of polycrystalline silicon solar cell

A laser terahertz emission microscope (LTEM) can be used for noncontact inspection to detect the waveforms of photoinduced terahertz emissions from material devices. In this study, we experimentally compared the performance of LTEM with conventional analysis methods, e.g., electroluminescence (EL), photoluminescence (PL), and laser beam induced current (LBIC), as an inspection method for solar cells. The results showed that LTEM was more sensitive to the characteristics of the depletion layer of the polycrystalline solar cell compared with EL, PL, and LBIC and that it could be used as a complementary tool to the conventional analysis methods for a solar cell.

Polarization imaging of imperfect m-plane GaN surfaces

Surface polar states in m-plane GaN wafers were studied using a laser terahertz (THz) emission microscope (LTEM). Femtosecond laser illumination excites THz waves from the surface due to photocarrier acceleration by local spontaneous polarization and/or the surface built-in electric field. The m-plane, in general, has a large number of unfavorable defects and unintentional polarization inversion created during the regrowth process. The LTEM images can visualize surface domains with different polarizations, some of which are hard to visualize with photoluminescence mapping, i.e., non-radiative defect areas. The present study demonstrates that the LTEM provides rich information about the surface polar states of GaN, which is crucial to improve the performance of GaN-based optoelectronic and power devices.

Probing the surface potential of oxidized silicon by assessing terahertz emission

Using laser terahertz emission microscopy, we measured laser-excited terahertz (THz) emission from silicon wafers with silicon-oxide passivation layers, revealing a strong correlation between the THz waveform and the surface potential. The surface potential was electrically tuned by a semitransparent top electrode disc and evaluated by measuring capacitance–voltage characteristics. The waveform changed with external bias and inverted near the flatband voltage, and changes appeared in the peak amplitude were similar to the capacitance–voltage characteristics. These results indicate that by analyzing the waveform of laser-excited THz emission generated by laser terahertz emission microscopy, we could quantitatively measure and map the internal field of surface band bending in semiconductors.

Control of dipole properties in high-k and SiO2 stacks on Si substrates with tricolor superstructure

The concept of the tricolor superstructure (TCS), which is a triple-layer stack structure containing two types of high dielectric constant (high-k) layers (designated HK1 and HK2) and a SiO2 layer, is proposed to control the moment and the polarity of the interface dipole layer that are induced at the high-k/SiO2 interfaces. The interface dipole layer is formed by oxygen ion migration from the layer with higher oxygen areal density (σ) to that with lower σ. When the two high-k materials are selected with the order of σHK1 > σSiO2 > σHK2 in a SiO2/HK2/HK1/SiO2 TCS, the dipole directions of the interface dipole layers at the SiO2/HK2 and the HK1/SiO2 interfaces are aligned. Additionally, in the transposed SiO2/HK1/HK2/SiO2 TCS, the total polarity is reversed. The concept is demonstrated using Al2O3 and Y2O3 layers because they offer the order of σAl2O3 > σSiO2 > σY2O3. The two stacking sequence samples composed of SiO2/Y2O3/Al2O3/SiO2 and SiO2/Al2O3/Y2O3/SiO2 that were fabricated using superlattice technique by pulsed laser deposition obviously show opposite dipole polarities. Increasing repetition of the deposited TCS unit also causes the dipole moments to increase systematically. The TCS technique enables control of the properties of the interface dipole layer at high-k/SiO2 interfaces in amorphous systems.The concept of the tricolor superstructure (TCS), which is a triple-layer stack structure containing two types of high dielectric constant (high-k) layers (designated HK1 and HK2) and a SiO2 layer, is proposed to control the moment and the polarity of the interface dipole layer that are induced at the high-k/SiO2 interfaces. The interface dipole layer is formed by oxygen ion migration from the layer with higher oxygen areal density (σ) to that with lower σ. When the two high-k materials are selected with the order of σHK1 > σSiO2 > σHK2 in a SiO2/HK2/HK1/SiO2 TCS, the dipole directions of the interface dipole layers at the SiO2/HK2 and the HK1/SiO2 interfaces are aligned. Additionally, in the transposed SiO2/HK1/HK2/SiO2 TCS, the total polarity is reversed. The concept is demonstrated using Al2O3 and Y2O3 layers because they offer the order of σAl2O3 > σSiO2 > σY2O3. The two stacking sequence samples composed of SiO2/Y2O3/Al2O3/SiO2 and SiO2/Al2O3/Y2O3/SiO2 that were fabricated using superlattice techniqu...

Evaluation of Si-SiO x interface using laser terahertz emission microscope (LTEM)

Terahertz emission from a Si metal-oxide-semiconductor (MOS) structure with transparent indium tin oxide electrodes was measured using a Laser Terahertz Emission Microscope (LTEM) with time-domain spectroscopy technique. The THz waveform and amplitude at various external voltage were compared with the capacitance-voltage characteristics. The observed peak amplitude strongly correlated with the surface potential and the THz waveform inverted near the flat-band voltage. This result strongly suggest that the LTEM can quantitatively measure the surface band bending of Si and can be applied as an evaluation technique of the Si MOS devices and the passivated surfaces of Si solar cells.

Enhancement of THz emission from GaN surface by Ga vacancy-related defects

The enhancement of terahertz emission from a GaN wafer induced by Ga vacancy-related defects was observed. This phenomena can be explained by the change of the band bending at these defects.

Observation of THz emissions from various types of solar cells using laser terahertz emission microscope

We examined various types of solar cells using laser terahertz emission microscope. As a result, we could observe the differences among various solar cells, e.g. grain size, material.