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Dive into the research topics where Hiro Einishi is active.

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Featured researches published by Hiro Einishi.


Japanese Journal of Applied Physics | 2011

Growth of Epitaxial 100-Oriented KNbO3?NaNbO3 Solid Solution Films on (100)cSrRuO3?(100)SrTiO3 by Hydrothermal Method and Their Characterization

Takahisa Shiraishi; Hiro Einishi; Shintaro Yasui; Mutsuo Ishikawa; Tomohito Hasegawa; Minoru Kurosawa; Hiroshi Uchida; Yukio Sakashita; Hiroshi Funakubo

Films of solid solution in KNbO3–NaNbO3 (KNN) were deposited at 240 °C on (100)cSrRuO3∥(100)SrTiO3 substrates by the hydrothermal method. (KxNa1-x)NbO3 films with x = 0–1.0 were synthesized by changing the fraction of KOH in a solution of KOH and NaOH. The x in (KxNa1-x)NbO3 continuously changed with the volume fraction of KOH, while the deposition amount strongly depended on x. Epitaxial films with 100 orientation were obtained in the entire composition range and their out-of-plane lattice spacing changed with x. All the films showed ferroelectricity and their remanent polarization became larger than what above x = 0.58.


Japanese Journal of Applied Physics | 2013

Crystal Structure Analysis of Hydrothermally Synthesized Epitaxial (KxNa1-x)NbO3 Films

Takahisa Shiraishi; Noriyuki Kaneko; Hiro Einishi; Takao Shimizu; Minoru Kurosawa; Hiroshi Uchida; Takeshi Kobayashi; Takanori Kiguchi; Toyohiko J. Konno; Hiroshi Funakubo

Epitaxial (KxNa1-x)NbO3 films with various compositions x were deposited on Nb-doped (100)SrTiO3 single crystal substrates at 240 °C by the hydrothermal method. Detailed crystal structures were analyzed by X-ray diffraction. All the (KxNa1-x)NbO3 films consisted of a perovskite phase without any impurity phase. High-temperature XRD data showed that (KxNa1-x)NbO3 films with x = 0.03 and 0.86 transformed to a single cubic phase at 600 °C through the intermediate phase. On the other hand, (KxNa1-x)NbO3 films with x = 0.24 showed two diffraction peaks at 600 °C originating from individual phases having different unit cell volumes. The result shows that these films consisted of a mixture of two perovskite phases with K- and Na- rich (KxNa1-x)NbO3 composition.


Key Engineering Materials | 2011

Growth of Orientation-Controlled Epitaxial KNbO3 Thin Film by Hydrothermal Method

Hiro Einishi; Mutsuo Ishikawa; Mitsumasa Nakajima; Sintaro Yasui; Tomoaki Yamada; Minoru Kurosawa; Hiroshi Funakubo

KNbO3 thin films were deposited at 240 oC on various kinds of single crystal substrates by hydrothermal method using aqueous solutions containing Nb2O5 and KOH. The deposition amount of the films was found not to be much dependent on the orientation and the surface roughness of the substrates, but on the electrical conductivity of the substrate. Epitaxial {100}, {110} and {111}-oriented KNbO3 films with ferroelectricity were grown on (100)c, (110)c, and (111)c -oriented SrRuO3//(100)SrTiO3 substrates, respectively.


Japanese Journal of Applied Physics | 2010

Effect of Deposition Time on Film Thickness and Their Properties for Hydrothermally-Grown Epitaxial KNbO3 Thick Films

Mutsuo Ishikawa; Hiro Einishi; Mitsumasa Nakajima; Tomohito Hasegawa; Takeshi Morita; Yoshifumi Saijo; Minoru Kurosawa; Hiroshi Funakubo

Deposition behavior and the crystal structure of the epitaxial KNbO3 films, grown at 240 °C on (100)cSrRrO3∥(100)SrTiO3 substrates using hydrothermal method, as well as their ferroelectric and piezoelectric properties were systematically investigated. Film deposition was detected to have begun after 2 h from the start, and the thickness increased with increasing the deposition time up to 4 h, but contrary decreased after 9 h due to the etching by KOH. X-ray diffraction (XRD) patterns of the films were basically the same regardless of the deposition time. However, the films deposited for 15 h introduces large amount of voids than those for 2 h. Ferroelectric and piezoelectric response of the films deposited for 2 and 15 h were measured to have similar film thickness, but the maximum applied electric field for the 2-h films was twice as that for the 15-h ones. The prototype ultrasonic transducer was fabricated using the KNbO3 films, which were deposited by hydrothermal method at 240 °C for 3 h, and proved to be able to transmit and receive ultrasonic signals above 90 MHz in degassed water.


Journal of the Korean Physical Society | 2013

Ferroelectric and piezoelectric properties of (K,Na)NbO3 thick films prepared on metal substrates by hydrothermal method

Takahisa Shiraishi; Hiro Einishi; Shintaro Yasui; Hiroshi Funakubo; Tomohito Hasegawa; Minoru Kurosawa; Mutsuo Ishikawa; Hiroshi Uchida; Yukio Sakashita


Journal of The Ceramic Society of Japan | 2013

Composition dependency of crystal structure, electrical and piezoelectric properties for hydrothermally-synthesized 3 µm-thickness (KxNa1−x)NbO3 films

Takahisa Shiraishi; Hiro Einishi; Shintaro Yasui; Mutsuo Ishikawa; Tomohito Hasegawa; Minoru Kurosawa; Hiroshi Uchida; Yukio Sakashita; Hiroshi Funakubo


MRS Proceedings | 2013

Growth of 130 μm Thick Epitaxial KNbO 3 Film by Hydrothermal Method

Takahisa Shiraishi; Hiro Einishi; Mutsuo Ishikawa; Tomohito Hasegawa; Minoru Kurosawa; Hiroshi Funakubo


Journal of Materials Research | 2016

Crystal structure and compositional analysis of epitaxial (K 0.56 Na 0.44 )NbO 3 films prepared by hydrothermal method

Takahisa Shiraishi; Hiro Einishi; Takao Shimizu; Hiroshi Funakubo; Minoru Kurosawa; Hiroshi Uchida; Nobuhiro Kumada; Takanori Kiguchi; Toyohiko J. Konno


Archive | 2013

PEROVSKITE OXIDE FILM AND FERROELECTRIC FILM USING THE SAME, FERROELECTRIC DEVICE, AND METHOD FOR MANUFACTURING PEROVSKITE OXIDE FILM

Yukio Sakashita; Hiroshi Funakubo; Minoru Kurosawa; Mutsuo Ishikawa; Hiro Einishi; Takahisa Shiraishi


Japanese journal of applied physics : JJAP | 2013

Crystal Structure Analysis of Hydrothermally Synthesized Epitaxial (KxNa₁₋x)NbO₃ Films (Special Issue : Ferroelectric Materials and Their Applications)

Takahisa Shiraishi; Noriyuki Kaneko; Hiro Einishi

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Hiroshi Funakubo

Tokyo Institute of Technology

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Mutsuo Ishikawa

Tokyo Institute of Technology

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Tomohito Hasegawa

Tokyo Institute of Technology

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Shintaro Yasui

Tokyo Institute of Technology

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Mitsumasa Nakajima

Tokyo Institute of Technology

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Noriyuki Kaneko

Tokyo Institute of Technology

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