Hiroaki Myoren

Mixing at terahertz frequency band using YBa2Cu3O7−δ bicrystal Josephson junctions

Using high-Tc Josephson junctions made of YBa2Cu3O7−δ deposited across MgO bicrystal boundary, at terahertz (THz) frequency band, we demonstrated both fundamental and harmonic mixing. Radiation from a far-infrared laser was coupled to the junction, which was integrated with a planar bow-tie antenna, via an extended hyperhemispherical silicon lens. Fundamental mixing manifested itself in the junction’s dc current–voltage (I–V) curve as a third Shapiro step in addition to those two induced by the THz laser lines from a slightly misaligned resonator. In harmonic mixing between a THz laser line and a microwave local oscillator, the highest harmonic number we could get was 490 with a signal-to-noise ratio of 9 dB at the intermediate frequency.

Electric field effect on the artificial grain boundary of bicrystal YBa2Cu3O7−δ films

An ability of the artificial grain boundary of bicrystal YBa2Cu3O7−δ thin films is demonstrated as the field effect channel of high Tc field effect devices. The influence of field application on the channel resistance is examined with a metal‐insulator‐semiconductor‐type structure, in which a channel is arranged across the grain boundary. The field‐induced change in the resistance of the grain boundary is enhanced up to around 5% by lowering temperature below Tc of adjoining YBa2Cu3O7−δ grains. The enhancement is explained not only by an increase in the dielectric constant of the gate insulator (SrTiO3) but also by a reduction in the carrier density nearby the grain boundary. The latter is indeed a benefit to high Tc field effect devices.An ability of the artificial grain boundary of bicrystal YBa2Cu3O7−δ thin films is demonstrated as the field effect channel of high Tc field effect devices. The influence of field application on the channel resistance is examined with a metal‐insulator‐semiconductor‐type structure, in which a channel is arranged across the grain boundary. The field‐induced change in the resistance of the grain boundary is enhanced up to around 5% by lowering temperature below Tc of adjoining YBa2Cu3O7−δ grains. The enhancement is explained not only by an increase in the dielectric constant of the gate insulator (SrTiO3) but also by a reduction in the carrier density nearby the grain boundary. The latter is indeed a benefit to high Tc field effect devices.

Study on Epitaxial Growth of CeO2 (110)/Si(100) in Conjunction with Substrate Off-Orientation

The substrate off-orientation effect is systematically studied on epitaxial CeO 2 (110) layers on Si(100), and the crystalline quality is significantly improved by enhancement of domains whose 〈110〉 is perpendicular to the offset-direction (Si〈110〉). AFM measurements indicate that the CeO 2 layer surface consists of stripe-shaped facets and that their size is typically 100˜200 nm long, 20 nm wide and ∼3 nm high for a 150 nm-thick layer. RHEED and XTEM reveal that CeO 2 〈110〉 axis is inclined from wafer normal by the off-angle. The step arrangement at Si surface observed by XTEM relates closely to the inclination of the facets. It is found that off-orientation (≥∼,2.5°) leads to single crystal layer formation. RBS analyses verify that the crystalline quality is significantly improved, especially at the surface. The best result is obtained at the off-angle of 2.5°.

Low frequency (1/f) noise in YBa2Cu3O7−δ grain boundary junction dc superconducting quantum interference devices

We have studied low frequency (1/f) noise of YBa2Cu3O7−δ dc superconducting quantum interference devices (SQUIDs) on SrTiO3 bicrystal substrates. 1/f flux noise, either measured at different temperatures for optimized bias current or measured at 77 K for different bias currents, is almost constant. These facts imply that 1/f noise mainly comes from fluctuations of the critical current of the Josephson junction that form the SQUID. Also, we explain the critical current fluctuations in the junction by an equilibrium temperature fluctuation model.

Suppression of the Josephson Current in Normal-Distribution-Shaped Tunnel Junctions

The magnetic field dependence of the Josephson current of a Josephson tunnel junction whose shape was a normal distribution is analyzed for superconducting tunnel junction (STJ) photon detector applications. It was found that the Josephson current of a normal distribution junction is very sensitive to the external magnetic field and follows a function of exp (-B2), while a conventional rectangular STJ exhibits the well-known Fraunhofer pattern of sin x/x. Numerical calculations show that the Josephson current of the normal distribution junction can be suppressed by an external magnetic field that is one tenth of that needed for conventional rectangular junctions. Calculations of a normal distribution junction approximated with a 1 µm mesh also show that the Josephson current is sufficiently suppressed by a small magnetic field. The effect of the misalignment of the angle between the junction and the magnetic field was evaluated. It was found that for a normal-distribution-shaped junction, misalignment of the magnetic field is allowed within ± 5°, suppressing the Josephson effect by two orders of magnitude more than that of a rectangular junction.

Intrinsic noise temperatures of YBa2Cu3O7−δ Josephson devices on bicrystal substrates and the upper frequency limit for their operation

Following a method proposed by Divin and Modovets [Sov. Tech. Phys. Lett. 9, 108 (1983)], we have measured at millimeter waveband the intrinsic noise temperatures TN of YBa2Cu3O7−δ Josephson junctions or dc superconducting quantum interference devices (SQUIDs) fabricated on SrTiO3, yttria‐stabilized ZrO2, or Si bicrystal substrates. Over wide ranges of physical temperatures TP and the junction’s normal resistance RN, it was found that TN follows TP pretty well. This indicates that the intrinsic noise in the devices is dominated by Johnson noise. TN was also measured in cases where there is external magnetic field applied, or where there is another microwave radiation like the local oscillator in a mixer. The magnetic field or microwave radiation does not seem to affect TN in any appreciable way. To estimate the high frequency performance of the junctions on Si bicrystal substrates, direct irradiation by a far infrared laser at 1.81 THz is carried out and the clear first Shapiro step is observed.

Field effects on the dielectric property of YBCO bicrystal grain boundary junctions

Electric field effects on YBCO grain boundary Josephson junctions combined with inverted MIS (Metal, Insulator, Superconductor) structures were studied. Current steps and hysteresis recognized in current-voltage curves were strongly affected by the field. The current steps were attributed to the self-excited resonances, i.e., Fiske steps. Both the effects were interpreted by the field dependence of the effective dielectric constant of the grain boundary which has a certain contribution from the large dielectric constant of SrTiO/sub 3/ substrates. The effective dielectric constant normalized with barrier thickness of the junction was estimated to be about 40 nm/sup -1/ for the zero gate voltage and was decreased by a factor of 2 with the electric field of /spl plusmn/16 kV/cm. This feature is assumed adequate for tuning the phase velocity in the bicrystal grain boundaries.<<ETX>>

Successful fabrication of bicrystal Si substrates for YBa2Cu3O7 − y Josephson junctions

Bicrystal Si(BiSi) substrates for grain boundary (GB) Josephson junctions (GBJJs) have been fabricated by a direct bonding technique using a hot press method. The fracture strength and structure of the bonding interfaces were investigated to obtain substrates suitable for the junctions. It was found that an increase in the pressure of the hot press improves the reproducibility of the GBJJs. YBa2Cu3O7 − y GBJJs were successfully fabricated on Bi-Si substrates with a misorientation angle of 15 ° bonded under a pressure of 90 kgf cm−2 at 1200 °C in a vacuum of ≈10−3 Pa. These junctions showed typical I-V curves described by the RSJ model. The Shapiro steps induced by millimetre wave irradiation of 101 GHz were clearly observed in the I-V curves up to 3 mV, corresponding to at least 1.5 THz (= 2eVh, where e is the unit charge, V the voltage and h Plancks constant).

Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers

Photosensitive polyimide insulation layers have been introduced to fabricate superconducting integrated circuits. It is shown to simplify the fabrication process, because the photosensitive polyimide insulation layer can be patterned by conventional photolithography process, resulting in the etching process unnecessary in the present new fabrication process. Three kinds of contact hole (junction top electrode contact, junction base electrode contact, and resistor contact) are simultaneously formed in the photolithography process of the polyimide. A minimum contact hole size is designed to be 1.5 /spl mu/m square for a 3 /spl mu/m /spl times/ 3 /spl mu/m squared junction. Superconducting current density of 2.4/spl times/10/sup 6/ A/cm/sup 2/ of the contact hole was measured. Palladium resistors were successfully made with through hole contacts of the photosensitive polyimide insulation layer. We demonstrated superconducting integrated circuits using this new fabrication process including the minimum 3 /spl mu/m /spl times/ 3 /spl mu/m squared Nb/Al-AlO/sub x//Nb Josephson tunnel junction. The circuit operation is also demonstrated in the fabricated superconducting integrated circuits with the photosensitive polyimide insulation layers.

Sidelobes suppression in normal-distribution-shaped Josephson tunnel junctions

We have studied normal-distribution-shaped Josephson tunnel junctions for STJ (superconducting tunnel junction) photon detector applications. By employing a normal-distribution function to the shape of the superconducting electrodes sidelobes of the Josephson current were entirely suppressed with a small magnetic field. This behavior was confirmed experimentally by using Nb/AlO/sub x//Nb Josephson tunnel junctions. There were no oscillatory sidelobes in the Josephson current dependence on the magnetic field. Experimental results were in good agreement with theoretical ones. The Josephson current was efficiently suppressed by an external magnetic field of about 0.5 mT at 4.2 K, which is less than one tenth that of other shaped junctions. In the experiment at 0.3 K, Fiske steps due to the resonances were not observed by suppression with a magnetic field of about 1 mT.