Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Hirokazu Kawashima.
Japanese Journal of Applied Physics | 2012
Shigekazu Tomai; Mami Nishimura; Masayuki Itose; Masahide Matuura; Masashi Kasami; Shigeo Matsuzaki; Hirokazu Kawashima; Futoshi Utsuno; Koki Yano
We have developed a high-mobility and high-processability oxide semiconductor using amorphous In2O3–SnO2–ZnO (a-ITZO) as the channel material. An a-ITZO thin-film transistor (TFT) was fabricated by a back-channel-etch process. Its field effect mobility was more than 20 cm2 V-1 s-1 and its subthreshold swing was 0.4 V s-1, which makes it a promising candidate for next-generation TFTs.
Archive | 2008
Koki Yano; Hirokazu Kawashima; Kazuyoshi Inoue; Shigekazu Tomai; Masashi Kasami
Archive | 2009
Koki Yano; Kazuyoshi Inoue; Hirokazu Kawashima; Shigekazu Tomai
Archive | 2013
Koki Yano; Hirokazu Kawashima; Kazuyoshi Inoue; Shigekazu Tomai; Masashi Kasami
Archive | 2009
Hirokazu Kawashima; Koki Yano; Futoshi Utsuno; Kazuyoshi Inoue
Archive | 2009
Koki Yano; Hirokazu Kawashima; Kazuyoshi Inoue
Archive | 2009
Koki Yano; Hirokazu Kawashima
Archive | 2016
Koki Yano; Hirokazu Kawashima; Kazuyoshi Inoue
Archive | 2012
Futoshi Utsuno; Kazuyoshi Inoue; Hirokazu Kawashima; Masashi Kasami; Koki Yano; Kouta Terai
Archive | 2008
Kazuyoshi Inoue; Koki Yano; Futoshi Utsuno; Masashi Kasami; Shigekazu Tomai; Hirokazu Kawashima
