Hiroki Ikeuchi

SiC Power Module for Compact Power Conversion Equipment

In order for wide bandgap semiconductor power devices to be practical use in various power electronics applications, a 2in1 600V75A power package with a 200 degree Celsius heat resistance was newly developed on the premise of mass production. This package designed to specify a low inductance of less than 24nH enables SiC and GaN-based devices to be driven with a high slew rate up to 5kA/us under hard-switching condition. Furthermore, this package encapsulated by a epoxy resin of a high heat resistance and equipped with thick Cu heat spreader allow these power devices to be driven up to 200 degree Celsius and dissipate heat in large quantities (thermal resistance Rth,jc: 0.6K/W), which is found to make cooling heat sink simplified. We introduced 50ASiC-MOSFET in this package, and verified the operation on a power conditioner for Solar Photovoltaic cells up to 4kW output. A high power conversion efficiency of 97.7% was measured by our SiC power packages on downsized cooling heat sink in 1/4 volume, which was more efficient than Si-IGBT module by 1.5%.