Hiroshi Gotou

Dram cell formed on an insulating layer having a buried semiconductor pillar structure and a manufacturing method thereof

Semiconductor memory device having stacked capacitor

Method for fabricating a silicon carbide substrate

Method of manufacturing SOI semiconductor device

Method of making semiconductor memory device having stacked capacitor

MOS FET having a thin film SOI structure

Semiconductor memory device having stacked capacitor and method of producing the same

Insulated-gate FET on an SOI-structure

Semiconductor memory device having capacitor through which data read/write is carried out

Semiconductor dram device having a trench