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Hiroshi Matsukizono

National Archives and Records Administration

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Featured researches published by Hiroshi Matsukizono.

SID Symposium Digest of Technical Papers | 2013

16.1: Negative-Bias Photodegradation Mechanism in InGaZnO TFT

Masashi Tsubuku; Ryosuke Watanabe; Noritaka Ishihara; Hideyuki Kishida; Masahiro Takahashi; Shunpei Yamazaki; Yohsuke Kanzaki; Hiroshi Matsukizono; Shigeyasu Mori; Takuya Matsuo

SID Symposium Digest of Technical Papers | 2012

9.1: WITHDRAWN: 9.2: New Threshold Voltage Compensation Pixel Circuits in 13.5-inch Quad Full High Definition OLED Display of Crystalline In-Ga-Zn-Oxide FETs

Toru Tanabe; Seiko Amano; Hiroyuki Miyake; Akio Suzuki; Ryu Komatsu; Jun Koyama; Shunpei Yamazaki; Kenichi Okazaki; Masahiro Katayama; Hiroshi Matsukizono; Yohsuke Kanzaki; Takuya Matsuo

SID Symposium Digest of Technical Papers | 2013

52.3: Development of Back-channel-etched TFT Using C-Axis Aligned Crystalline In-Ga-Zn-Oxide

Junichi Koezuka; Kenichi Okazaki; Takuya Hirohashi; Masahiro Takahashi; Shunsuke Adachi; Masashi Tsubuku; Shunpei Yamazaki; Yohsuke Kanzaki; Hiroshi Matsukizono; Seiji Kaneko; Shigeyasu Mori; Takuya Matsuo

Journal of The Society for Information Display | 2014

Back-channel-etched thin-film transistor using c-axis-aligned crystal In–Ga–Zn oxide

Shunpei Yamazaki; Takuya Hirohashi; Masahiro Takahashi; Shunsuke Adachi; Masashi Tsubuku; Junichi Koezuka; Kenichi Okazaki; Yohsuke Kanzaki; Hiroshi Matsukizono; Seiji Kaneko; Shigeyasu Mori; Takuya Matsuo

SID Symposium Digest of Technical Papers | 2014

21.1: A 513‐ppi FFS‐Mode TFT‐LCD using CAAC Oxide Semiconductor Fabricated by a 6‐Mask Proces

Akio Yamashita; Daisuke Kubota; Koji Moriya; Yusuke Kubota; Mika Jikumaru; Masaru Nakano; Haruyuki Baba; Yoshiharu Hirakata; Jun Koyama; Shunpei Yamazaki; Masahiro Katayama; Chieko Misawa; Hiroshi Matsukizono; Yohsuke Kanzaki; Seiji Kaneko; Naoki Ueda; Shigeyasu Mori; Takuya Matsuo

SID Symposium Digest of Technical Papers | 2014

P‐9: Study of the Origin of Major Donor States in Oxide Semiconductor

Masashi Oota; Noritaka Ishihara; Motoki Nakashima; Yoichi Kurosawa; Takuya Hirohashi; Masahiro Takahashi; Shunpei Yamazaki; Toshimitsu Obonai; Yasuharu Hosaka; Junichi Koezuka; Yohsuke Kanzaki; Hiroshi Matsukizono; Seiji Kaneko; Takuya Matsuo

Archive | 2007

Semiconductor element, method for fabricating the same and display

Hiroshi Matsukizono; Takuya Matsuo; Naoki Makita; Takashi Terauchi

SID Symposium Digest of Technical Papers | 2016

76‐1: Invited Paper: CAAC‐IGZO Technology

Takuya Matsuo; Yosuke Kanzaki; Hiroshi Matsukizono; Akihiro Oda; Seiji Kaneko; Naoki Ueda; Yoshiharu Kataoka; Hedeaki Shishido; Kei Takahashi; Shunpei Yamazaki; Kenichi Okazaki; Junichi Koezuka

SID Symposium Digest of Technical Papers | 2014

44.3: 513‐ppi Liquid Crystal Display Using C‐Axis Aligned Crystalline Oxide Semiconductor with Narrow Bezel and Aperture Ratio Greater Than 50%

Kouhei Toyotaka; Hiroyuki Miyake; Makoto Kaneyasu; Akio Yamashita; Mika Jikumaru; Jun Koyama; Shunpei Yamazaki; Masahiko Hayakawa; Masahiro Katayama; Yohsuke Kanzaki; Hiroshi Matsukizono; Seiji Kaneko; Naoki Ueda; Shigeyasu Mori; Takuya Matsuo; Akihiro Oda

Journal of The Society for Information Display | 2014

A 513‐ppi FFS‐mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode

Akio Yamashita; Kouhei Toyotaka; Masashi Oota; Daisuke Kubota; Hiroyuki Miyake; Yoshiharu Hirakata; Shunpei Yamazaki; Masahiro Katayama; Kenichi Okazaki; Junichi Koezuka; Hiroshi Matsukizono; Yohsuke Kanzaki; Seiji Kaneko; Naoki Ueda; Akihiro Oda; Shigeyasu Mori; Takuya Matsuo

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