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Dive into the research topics where Hiroshi Nakatsu is active.

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Featured researches published by Hiroshi Nakatsu.


IEEE Journal of Selected Topics in Quantum Electronics | 1995

Fundamental-transverse-mode high-power AlGaInP laser diode with windows grown on facets

Masanori Watanabe; Kentaro Tani; Kosei Takahashi; Kazuaki Sasaki; Hiroshi Nakatsu; Masahiro Hosoda; Sadayoshi Matsui; Osamu Yamamoto; Saburo Yamamoto

The window-grown-on-facet (WGF) structure was first implemented to high power fundamental-transverse-mode AlGaInP lasers so as to reduce facet degradation. A kink-free CW maximum output power of 295 mW, about twice as much as for an identical non-WGF laser, was achieved at the wavelength of 680 mm; and fundamental-transverse-mode operation up to 150 mW was confirmed. Front and rear window layers are undoped (Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P grown by MOCVD, while the internal laser was grown by solid-source MBE. The effect of the regrowth of the window layer was evaluated by time-resolved photoluminescence, and a threefold improvement in photoluminescence decay time was observed. >


Japanese Journal of Applied Physics | 1993

High-Power 780 nm AlGaAs Narrow-Stripe Window Structure Lasers with Window Grown on Facets

Mitsuhiro Matsumoto; Kazuaki Sasaki; Masaki Kondo; Takashi Ishizumi; Tadashi Takeoka; Hiroshi Nakatsu; Masanori Watanabe; Osamu Yamamoto; Saburo Yamamoto

A novel window structure referred to as window grown on facets (WGF) is applied to a 10%-95% coated narrow-stripe laser with a wavelength of 780 nm. An aspect ratio of 2 in the beam divergence without a decrease in the differential quantum efficiency is obtained by optimizing the narrow-stripe structure. Highly reliable operation under 70 mW CW at 60°C is attained beyond 4000 hours.


Archive | 1992

Light-emitting diode having a surface electrode of a tree like form

Masanori Watanabe; Mitsuhiro Matsumoto; Hiroshi Nakatsu; Tadashi Takeoka; Osamu Yamamoto; Kazuaki Sasaki


Archive | 1994

Semiconductor light emitting device with current confining layer

Kazuaki Sasaki; Hiroshi Nakatsu; Osamu Yamamoto; Masanori Watanabe; Saburo Yamamoto


Archive | 1991

Semiconductor laser device and a method for producing the same

Mitsuhiro Matsumoto; Kazuaki Sasaki; Masaki Kondo; Tadashi Takeoka; Hiroshi Nakatsu; Masanori Watanabe; Osamu Yamamoto; Saburo Yamamoto


Archive | 2004

Method of manufacturing a semiconductor light-emitting device

Hiroshi Nakatsu; Takahisa Kurahashi; Tetsuroh Murakami; Shouichi Ooyama


Archive | 2004

Semiconductor light-emitting element, manufacturing method therefor and semiconductor device

Shouichi Ohyama; Tetsurou Murakamii; Takahisa Kurahashi; Osamu Yamamoto; Hiroshi Nakatsu


Archive | 2004

Semiconductor light-emitting device and method for fabricating the device

Takahisa Kurahashi; Hiroshi Nakatsu; Hiroyuki Hosoba; Tetsurou Murakami


Archive | 2000

Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage

Junichi Nakamura; Hiroshi Nakatsu; Kazuaki Sasaki


Archive | 1991

A semiconductor laser device and a method for producing the same

Mitsuhiro Matsumoto; Sasaki Kazuaki; Masaki Kondo; Tadashi Takeoka; Hiroshi Nakatsu; Masanori Watanabe; Osamu Yamamoto; Saburo Yamamoto

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Osamu Yamamoto

National Archives and Records Administration

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Kazuaki Sasaki

National Archives and Records Administration

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Tadashi Takeoka

National Archives and Records Administration

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Saburo Yamamoto

National Archives and Records Administration

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Takashi Ishizumi

National Archives and Records Administration

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Kazuaki Sasaki

National Archives and Records Administration

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Osamu Yamamoto

National Archives and Records Administration

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