Hiroshi Nishizawa

Response calculation of a stacked CdZnTe detector for 16N γ-ray measurement

Abstract A stacked CdZnTe semiconductor detector, which is able to detect the 6.13 MeV γ-rays from 16 N, was prototyped and the response calculation was carried out by a Monte-Carlo simulation. The detector response was simulated by using the electron and photon transport code, EGS4 and taking into account the carrier trapping phenomena. The results of the response calculation agreed with the experimental data from the checking source of 137 Cs and 60 Co. The prototypes response and sensitivity to 16 N were calculated by simulating an incident energy of 6.13 MeV . The source spectra were unfolded with the detectors response function obtained by simulation, and it indicated that the incident γ-ray energy and its intensity ratio was identified. We have acquired the potential to measure the γ-ray energy in the high energy region about 6 MeV with the stacked CdZnTe detector.