Hiroto Tamaki

Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor

We fabricated a high-color-rendering, red-enhanced white-light-emitting diode (LED) using a new red phosphor and a short-wavelength YAG phosphor. When the new white-LED was operated at a forward-bias current of 20 mA at room temperature (RT), color temperature (Tcp), the general color rendering index (Ra) and luminous efficiency were 4670 K, 87.7 and 25.5 lm/W, respectively. Most of the color-rendering indexes (CRIs) of the new white-LED were larger than those of current white-LEDs, in which only YAG is used. In particular, the CRI-No.9 value, which shows the color reproduction in the red region, is improved from -2.5 to 62.6.

A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes

In search of suitable white-LED for general illumination, we fabricated various types of white-LEDs using different methods. As the first method, we used the multichip method in which multiple emitters were mounted in one package. This type showed a good general color-rendering index (Ra) = 90 by the optimizing the emission wavelength of each LED chip. However, the electric driving circuitry was too complex for use in general illumination. Secondly, we used a monolithic white-LED by using the multicolor emitting multiple-quantum well (MQW) for the active layers, which consisted of quantum wells (QWs) with different In compositions. A high Ra = 80.1 was obtained in the three-color-emitting white-LED but the luminous efficacy (η L ) was only 8.11 1m/W. As the third method, we used the color conversion method using phosphors. We fabricated a white-LED which consisted of a near-UV-LED chip and blue/yellow phosphors in order to improve the luminous efficacy of the white-LED under high forward-bias current. At 100 mA, the luminous flux (I L ) was estimated to be 7.61m. However, this white-LED degraded quickly, because the epoxy resin used for package was the general purpose one and deteriorated under the UV-light from the n-UV-LED. Next, we improved the Ra and η L of a traditional white-LED which consisted of blue-LED chip and yellow phosphor. In order to improve the Ra, we added a newly developed red phosphor. We obtained a Ra = 87.7 at low-color-temperature. Then, in order to improve the efficiency of the white-LED, we improved the extraction efficiency (η EX ) of the blue-LED by using a patterned sapphire substrate and a high reflection Rh-mesh-patterned p-electrode. Then, we obtained a 62.0 1m/W at 20 mA. As a result, we concluded that the color conversion method of using a blue-LED for general illumination has advantages in efficiency, color-rendering, cost and lifetime. It also has simpler electric driving circuitry.

High-output-power deep ultraviolet light-emitting diode assembly using direct bonding

We fabricated high-output-power 255 and 280 nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lenses had a higher light extraction efficiency than conventionally structured LEDs. As a result, at a forward current of 350 mA, the output power of the 255 nm LED increased by a factor of 2.8, reaching 73.6 mW, while that of the 280 nm LED increased by a factor of 2.3, reaching 153 mW.