Hiroya Tsuji

High-performance OLEDs and their application to lighting

Organic light emitting diodes (OLED) are expected to be used in next generation solid state lighting sources serving as an alternative to conventional incandescent bulbs and fluorescent lamps. OLEDs will provide the environmental benefits of possible considerable energy savings and elimination of mercury, as well as some other advantages such as thin flat shape, planar emission, and no UV emission. Recently, important properties of OLEDs such as efficiency and lifetime have been greatly improved. Additionally, for lighting applications, a high color rendering index (CRI) at the desired CIE chromaticity coordinates, high luminance and large area uniform emission, and high stability over long time operation are also required. In this paper, we describe the development and performance of our high CRI OLEDs: the conventional OLED with multiple emissive layers and the multi-unit OLED with only two emissive units (a fluorescent blue emissive unit and a phosphorescent green / red emissive unit). Related technologies for OLED lighting to obtain uniform emission at high luminance in large areas are also described.

Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD)

The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10−4 cm2 V−1s−1. Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.