Hitoshi Kawashima

Ultrafast nonlinear effects in hydrogenated amorphous silicon wire waveguide

We, for the first time, present the ultrafast optical nonlinear response of a hydrogenated amorphous silicon (a-Si:H) wire waveguide using femtosecond pulses. We show cross-phase and cross-absorption modulations measured using the heterodyne pump-probe method and estimate the optical Kerr coefficient and two-photon absorption coefficient for the amorphous silicon waveguide. The pumping energy of 0.8 eV is slightly lower than that required to achieve two-photon excitation at the band gap of a-Si:H (approximately 1.7 eV). An ultrafast response of less than 100 fs is observed, which indicates that the free-carrier effect is suppressed by the localized states in the band gap.

All-optical logic based on ultrafast gain and index dynamics in a semiconductor optical amplifier

We investigate nonlinear carrier dynamics in a multiquantum-well semiconductor optical amplifier (SOA) in the context of ultrafast all-optical logic. A rate-equation model is presented that accounts for two-photon absorption, free-carrier absorption, self- and cross phase modulation, carrier heating, spectral, spatial hole burning, and self- and cross polarization modulation. The nonlinear refractive index dynamics is investigated theoretically and experimentally. We find nonlinear phase changes larger than /spl pi/ radians, which recovers on a timescale in the order of 1 ps. We also investigate a nonlinear AND gate that consists of an SOA that is placed in an asymmetric Mach-Zehnder interferometer. We show that the gate can be operated using 800-fJ optical pulses with duration of 200 fs while having a contrast ratio larger than 11 dB.

Ultra-compact 8 × 8 strictly-non-blocking Si-wire PILOSS switch

We report on a path-independent insertion-loss (PILOSS) 8 × 8 matrix switch based on Si-wire waveguides, which has a record-small footprint of 3.5 × 2.4 mm2. The PILOSS switch consists of 64 thermooptic Mach-Zehnder (MZ) switches and 49 low-crosstalk intersections. Each of the MZ switches and intersections employs directional couplers, which enable the composition of a low loss PILOSS switch. We demonstrate successful switching of digital-coherent 43-Gbps QPSK signal.

Ultra-compact 32 × 32 strictly-non-blocking Si-wire optical switch with fan-out LGA interposer

We demonstrate a 32 × 32 path-independent-insertion-loss optical path switch that integrates 1024 thermooptic Mach-Zehnder switches and 961 intersections on a small, 11 × 25 mm2 die. The switch is fabricated on a 300-mm-diameter silicon-on-insulator wafer by a complementary metal-oxide semiconductor-compatible process with advanced ArF immersion lithography. For reliable electrical packaging, the switch chip is flip-chip bonded to a ceramic interposer that arranges the electrodes in a 0.5-mm pitch land grid array. The on-chip loss is measured to be 15.8 ± 1.0 dB, and successful switching is demonstrated for digital-coherent 43-Gb/s QPSK signals. The total crosstalk of the switch is estimated to be less than -20 dB at the center wavelength of 1545 nm. The bandwidth narrowing caused by dimensional errors that arise during fabrication is discussed.

Pattern-effect-free all-optical wavelength conversion using a hydrogenated amorphous silicon waveguide with ultra-fast carrier decay

Ultra-fast carrier decay, recently discovered in a hydrogenated amorphous silicon waveguide, can be exploited for pattern-effect-free all-optical signal processing based on optical Kerr nonlinearity. In this study, we utilized a 10 Gbit/s RZ-OOK data stream as a pump for degenerate four-wave mixing in a low-loss hydrogenated amorphous silicon waveguide. The propagation loss of the waveguide used was 1.0±0.2 dB/cm at 1550 nm. Unlike crystalline silicon waveguides, no noticeable difference was observed in the BER characteristics between the cases of PRBS 2(7)-1 and 2(31)-1.

Ultrafast refractive-index dynamics in a multiquantum-well semiconductor optical amplifier

We investigate ultrafast refractive index dynamics in a multiquantum-well InGaAsP-InGaAs semiconductor optical amplifier that is operated in the gain regime by using a pump-and-probe approach. The pump-and-probe pulses are cross-linearly polarized. We observe a phase shift of 200/spl deg/ if the amplifier is pumped with 120 mA of current, but find that the phase shift vanishes if the injection current is increased to 160 mA. Our results indicate a contribution of two-photon absorption to the nonlinear phase shift that opposes the phase shift introduced by the gain. Finally, we observe that the phase shift comes up and disappears within a picosecond.

Observation of sub-100-fs optical response from spin-coated films of squarylium dye J aggregates

For spin-coated films of squarylium dye J aggregates, ultrafast nonlinear optical responses were investigated by pump–probe measurements. By using a broadband mode-locked titanium:sapphire laser, we succeeded in observing the optical response with a time resolution of better than 60 fs. Time-resolved transmission data are shown for different excitation wavelengths, resonant to the excitonic absorption band and off-resonant. Relaxation times of the absorption saturation were evaluated to be 140 fs (fast component) and 950 fs (slow component) in the case of resonant excitation and 98 fs in the case of off-resonant excitation.

Ultra-small, self-holding, optical gate switch using Ge 2 Sb 2 Te 5 with a multi-mode Si waveguide

We report a multi-mode interference-based optical gate switch using a Ge(2)Sb(2)Te(5) thin film with a diameter of only 1 µm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, self-holding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively.

Cooperativity between hippocampal–prefrontal short-term plasticity through associative long-term potentiation

The hippocampal-medial prefrontal cortex (mPFC) pathway provides highly convergent input to the mPFC in rats and shows two types of short-term plasticity in terms of paired-pulse facilitation (PPF) of the field potential under urethane anesthesia. We now report that stimulating either the dorsal or ventral subregions of the posterior hippocampus elicited PPF (by about 335 and 120%, respectively) of field potentials recorded in the mPFC at 100 ms interpulse interval. This PPF-like interaction occurred when projections were stimulated in the ventral-dorsal order (by about 200% of the single-pulsed response), but not vice versa. When weak long-term potentiation (LTP) of the dorsal projection was evoked simultaneously with strong LTP of the ventral projection, an associative effect was revealed (about +55%), although the magnitudes of LTP in each projection were not correlated. Even when the impermutable PPF-like facilitation was further enhanced (by about +120%), the enhancement was not correlated with either form of LTP, but exhibited the interaction of changes in the dorsal PPF, rather than in the heterotopic priming effect through the ventral projection. Moreover, this change was correlated with the associated LTP ratio of dorsal to ventral projection LTP (i.e., LTP associativity). Larger increases in LTP associativity correlated with greater impermutable PPF-like facilitation; in addition, there was hardly attenuation of the response to the dorsal projection by subsequent electrolytic lesions of the ventral subregion. These results indicate that the mPFC functionally integrates discrete sources of hippocampal information via cooperativity between short- and long-term plasticity.

Ultra-high-extinction-ratio 2 × 2 silicon optical switch with variable splitter.

We demonstrate a record-high extinction-ratio of 50.4 dB in a 2 × 2 silicon Mach-Zehnder switch equipped with a variable splitter as the front 3-dB splitter. The variable splitter is adjusted to compensate for the splitting-ratio mismatch between the front and rear 3-dB splitters. The high extinction ratio does not rely on waveguide crossings and meets a strong demand in applications to multiport circuit switches. Large fabrication tolerance will make the high extinction ratio compatible with a volume production with standard complementary metal-oxide semiconductor fabrication facilities.