Hjm Henk Swagten

Domain wall depinning governed by the spin Hall effect

Perpendicularly magnetized materials have attracted significant interest owing to their high anisotropy, which gives rise to extremely narrow, nanosized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a new class of data, memory and logic devices. Here we propose the spin Hall effect as an alternative mechanism for CIDWM. We are able to carefully tune the net spin Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique control over CIDWM. Furthermore, we determine that the depinning efficiency is intimately related to the internal structure of the domain wall, which we control by the application of small fields along the nanowire. This manifestation of CIDWM offers an attractive degree of freedom for manipulating domain wall motion by charge currents, and sheds light on the existence of contradicting reports on CIDWM in perpendicularly magnetized materials.

Large magnetoresistance using hybrid spin filter devices

A magnetic “spin filter” tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal, is used to create a magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this configuration yields a previously unobserved magnetoresistance effect, exceeding 100%.

Structure and magnetization of arrays of electrodeposited Co wires in anodic alumina

We have produced arrays of Co nanowires in anodic porous alumina filters by means of electrodeposition. The structure and magnetization behavior of the wires was investigated with nuclear magnetic resonance (NMR) and magnetization measurements. NMR shows that the wires consist of a mixture of fcc and hcp texture with the (0001) texture of the hcp fraction oriented preferentially perpendicular to the wires. The magnetization direction is determined by a competition of demagnetizing fields and dipole–dipole fields and can be tuned parallel or perpendicular to the wires by changing the length of the wires.

Shift registers based on magnetic domain wall ratchets with perpendicular anisotropy

The movement of magnetic domain walls can be used to build a device known as a shift register, which has applications in memory and logic circuits. However, the application of magnetic domain wall shift registers has been hindered by geometrical restrictions, by randomness in domain wall displacement and by the need for high current densities or rotating magnetic fields. Here, we propose a new approach in which the energy landscape experienced by the domain walls is engineered to favour a unidirectional ratchet-like propagation. The domain walls are defined between domains with an out-of-plane (perpendicular) magnetization, which allows us to route domain walls along arbitrary in-plane paths using a time-varying applied magnetic field with fixed orientation. In addition, this ratchet-like motion causes the domain walls to lock to discrete positions along these paths, which is useful for digital devices. As a proof-of-principle experiment we demonstrate the continuous propagation of two domain walls along a closed-loop path in a platinum/cobalt/platinum strip.

Ferromagnetism in thin-film Cr-doped topological insulator Bi2Se3

We report on the observation of ferromagnetism in epitaxial thin films of the topological insulator compound Bi2Se3 with chromium doping. The structural, magnetic, and magnetoelectrical properties of Bi2Se3 were investigated for Cr concentrations up to 10%. For a Cr content up to ∼5% the films are of good crystalline quality, with the lattice parameter a decreasing and the lattice parameter c increasing with increasing Cr concentration. The Curie temperature reached a maximum TC = 20 K for 5.2% Cr. Well-defined ferromagnetic hysteresis in the magnetization and in the magnetoresistance was also observed in these films.

Thickness dependence of the interfacial Dzyaloshinskii–Moriya interaction in inversion symmetry broken systems

In magnetic multilayer systems, a large spin-orbit coupling at the interface between heavy metals and ferromagnets can lead to intriguing phenomena such as the perpendicular magnetic anisotropy, the spin Hall effect, the Rashba effect, and especially the interfacial Dzyaloshinskii–Moriya (IDM) interaction. This interfacial nature of the IDM interaction has been recently revisited because of its scientific and technological potential. Here we demonstrate an experimental technique to straightforwardly observe the IDM interaction, namely Brillouin light scattering. The non-reciprocal spin wave dispersions, systematically measured by Brillouin light scattering, allow not only the determination of the IDM energy densities beyond the regime of perpendicular magnetization but also the revelation of the inverse proportionality with the thickness of the magnetic layer, which is a clear signature of the interfacial nature. Altogether, our experimental and theoretical approaches involving double time Greens function methods open up possibilities for exploring magnetic hybrid structures for engineering the IDM interaction.

Magnetization dynamics and Gilbert damping in ultrathin Co48Fe32B20 films with out-of-plane anisotropy

Time resolved magneto-optical Kerr measurements are carried out to study the precessional dynamics of ferromagnetic thin films with out-of-plane anisotropy. A combined analysis of parameters, such as coercive fields, magnetic anisotropy, and Gilbert damping α, is reported. Using a macrospin approximation and the Landau–Lifshitz–Gilbert equation, the effective anisotropy and α are obtained. A large damping varying with the applied field as well as with the thickness of the ferromagnetic layer is reported. Simulations using a distribution in the effective anisotropy allow us to reproduce the field evolution of α. Moreover, its thickness dependence correlates with the spin pumping effect.

Field-free magnetization reversal by spin-Hall effect and exchange bias

As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin–orbit torques and the spin-Hall effect in particular have attracted significant interest, as they enable magnetization reversal without high current densities running through the tunnel barrier. For perpendicularly magnetized layers, however, the technological implementation of the spin-Hall effect is hampered by the necessity of an in-plane magnetic field for deterministic switching. Here we interface a thin ferromagnetic layer with an anti-ferromagnetic material. An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface.

Magnetic properties of diluted magnetic semiconductors

A review will be given of the magnetic characteristics of diluted magnetic semiconductors and the relation with the driving exchange mechanisms. II–VI as well as IV–VI compounds will be considered. The relevance of the long-range interaction and the role of the carrier concentration will be emphasized.

Band Structure and Density of States Effects in Co-Based Magnetic Tunnel Junctions

Utilizing Co/Al(2)O(3)/Co magnetic tunnel junctions with Co electrodes of different crystalline phases, a clear relationship between electrode crystal structure and junction transport properties is presented. For junctions with one fcc(111) textured and one polycrystalline (polyphase and polydirectional) Co electrode, a strong asymmetry is observed in the magnetotransport properties, while when both electrodes are polycrystalline the magnetotransport is essentially symmetric. These observations are successfully explained within a model based on ballistic tunneling between the calculated band structures (density of states) of fcc-Co and hcp-Co.