Ho-Shik Lee

Electrical Properties of a CuPc Field-Effect Transistor Using a UV/Ozone Treated and Untreated Substrate

An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 μm 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

Characteristic Analysis of X-ray Device using the High Voltage Generator on Full-wave Rectification Method

X-ray system which is usefully used in diagnosis of the patient, being bombed of radioactivity is a big weak point when irradiates a X-ray to the human body so that ICRP restricted the radiation exposure tolerance of the human body. In order to reduce being bombed, the many research and development is now advanced. A lots of diagnostic X-ray machines have currently used due to the increase of occurrence efficiency of X-ray and precisely the output control by using the inverter which is a high speed switching semiconductors. For getting the confidence of the X-ray machine, the same radiation occurrence, same evaluation, and same irradiation condition are necessary when evaluates X-ray irradiation. It is the most important part for the accuracy of the test result and the patient safety. This research has produced the high voltage occurrence system of full-wave rectification method by using the LC resonance inverter, and evaluated the irradiation reproducibility in order to use it in diagnosis of the patient.

Threshold Voltage Properties of OFET with CuPc Active Material

In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO₂ as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current–voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15–20 V at V DS = –80 V.

Surface Properties of Re-Ir Coating Thin Film on Tungsten Carbide Surface

Rhenium-Iridium(Re-Ir) thin films were deposited onto the tungsten carbide(WC) molding core by sputtering system. The Re-Ir films were prepared by multi-target sputtering with iridium, rhenium and chromium as the sources. Argon and nitrogen were inlet into the chamber to be the plasma and reactive gases. The Re-Ir thin films were prepared with targets having atomic percent of 3:7 and the Re-Ir thin films were formed with 240 nm thickness. The Re-Ir thin films on tungsten carbide molding core were analyzed by scanning electron microscope(SEM) and surface roughness. Also, adhesion strength and coefficient friction of Re-Ir thin film were examined. The Re-Ir coating technique has been intensive efforts in the field of coating process because the coating technique and process have been their feature, like hardness, high elasticity, abrasion resistance and mechanical stability and also have been applied widely the industrial and biomedical areas. In this report, tungsten carbide(WC) molding core was manufactures using high performance precision machining and the efforts of Re-Ir coating on the surface roughness.

Characteristic of DLC Thin Film Fabricated by FVAS Method on Tungsten Carbide

Department of Electrical and Electronic Engineering, Graduate School, Dongshin University, Naju 520-714, Korea(Received August 22, 2011; Revised September 9, 2011; Accepted September 14, 2011)Abstract: An optical lens is usually produced in the manner of high temperature compression molding with tungsten carbide alloy molding cores, it is necessary to develop and study technology for super-precision processing of molding cores and coating the core surface. As main methods used in surface improvement technologies using thin film, DLC present high hardness, chemical stability, and outstanding durability of abrasion to be extensively applied in various industrial fields. In this study, the effect of DLC coating of a thin film by means of the FVAS (filtered vacuum arc source) analyzed the characteristics of thin film. Surface roughness before and after DLC coating was measured and the result showed that the surface roughness was improved after coating as compared to before coating. In conclusion, it was observed that DLC coating of the ultra hard alloy core surface for molding had an effect on improving the surface roughness and shape of the core surface. It is considered that this will have an effect on improving abrasion resistance and the service life of the core surface.Keywords: Tungsten carbide, Diamond liked carbon, Thin film, Filtered vacuum arc source

Electrical Properties of CuPc Field-effect Transistor with Different Electrodes

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was , channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

Surface Potential Properties of CuPc/Au Interface with Varying Temperature

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

Copper Phthalocyanine Field-effect Transistor Analysis using an Maxwell-wagner Model

【Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a

Electrical Properties with Varying CuPc Thickness and Channel Length of the Field-effect Transistor

SiO_2

Study on Electrical Phenomena Properties of Bio-lipid Film on Water Surface for Application of Medical Engineering Device

as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.】