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Featured researches published by Hoi Chun Po.


Proceedings of the National Academy of Sciences of the United States of America | 2015

Filling constraints for spin-orbit coupled insulators in symmorphic and nonsymmorphic crystals

Haruki Watanabe; Hoi Chun Po; Ashvin Vishwanath; Michael P. Zaletel

Significance Quantum spin liquids are exotic insulators in which the electron’s spin, charge, and fermionic statistics are carried by separate excitations. They have received attention for their potential as a quantum memory and as a parent state for high-temperature superconductivity. A key principle guiding the search for experimental candidate materials is the absence of conventional order in insulators at “fractional” electron filling. Previous results established what constitutes fractional filling, but assumed symmetries that are typically not respected in real materials or considered only simple lattices. Here, assuming only physical symmetries we establish filling conditions for all 230 space groups. This should aid in the search for quantum spin liquids and topological semimetals. We determine conditions on the filling of electrons in a crystalline lattice to obtain the equivalent of a band insulator—a gapped insulator with neither symmetry breaking nor fractionalized excitations. We allow for strong interactions, which precludes a free particle description. Previous approaches that extend the Lieb–Schultz–Mattis argument invoked spin conservation in an essential way and cannot be applied to the physically interesting case of spin-orbit coupled systems. Here we introduce two approaches: The first one is an entanglement-based scheme, and the second one studies the system on an appropriate flat “Bieberbach” manifold to obtain the filling conditions for all 230 space groups. These approaches assume only time reversal rather than spin rotation invariance. The results depend crucially on whether the crystal symmetry is symmorphic. Our results clarify when one may infer the existence of an exotic ground state based on the absence of order, and we point out applications to experimentally realized materials. Extensions to new situations involving purely spin models are also mentioned.


Physical Review Letters | 2016

Filling-Enforced Gaplessness in Band Structures of the 230 Space Groups.

H. Watanabe; Hoi Chun Po; Michael P. Zaletel; Ashvin Vishwanath

Nonsymmorphic symmetries like screws and glides produce electron band touchings, obstructing the formation of a band insulator and leading, instead, to metals or nodal semimetals even when the number of electrons in the unit cell is an even integer. Here, we calculate the electron fillings compatible with being a band insulator for all 230 space groups, for noninteracting electrons with time-reversal symmetry. Our bounds are tight-that is, we can rigorously eliminate band insulators at any forbidden filling and produce explicit models for all allowed fillings-and stronger than those recently established for interacting systems. These results provide simple criteria that should help guide the search for topological semimetals and, also, have implications for both the nature and stability of the resulting nodal Fermi surfaces.


Physical Review X | 2016

Chiral Floquet Phases of Many-Body Localized Bosons

Hoi Chun Po; Lukasz Fidkowski; Takahiro Morimoto; Andrew C. Potter; Ashvin Vishwanath

Author(s): Po, HC; Fidkowski, L; Morimoto, T; Potter, AC; Vishwanath, A | Abstract: We construct and classify chiral topological phases in driven (Floquet) systems of strongly interacting bosons, with finite-dimensional site Hilbert spaces, in two spatial dimensions. The construction proceeds by introducing exactly soluble models with chiral edges, which in the presence of many-body localization (MBL) in the bulk are argued to lead to stable chiral phases. These chiral phases do not require any symmetry and in fact owe their existence to the absence of energy conservation in driven systems. Surprisingly, we show that they are classified by a quantized many-body index, which is well defined for any MBL Floquet system. The value of this index, which is always the logarithm of a positive rational number, can be interpreted as the entropy per Floquet cycle pumped along the edge, formalizing the notion of quantum-information flow. We explicitly compute this index for specific models and show that the nontrivial topology leads to edge thermalization, which provides an interesting link between bulk topology and chaos at the edge. We also discuss chiral Floquet phases in interacting fermionic systems and their relation to chiral bosonic phases.


Bulletin of the American Physical Society | 2016

Phonon analogue of topological nodal semimetals

Hoi Chun Po; Yasaman Bahri; Ashvin Vishwanath

Topological band structures in electronic systems like topological insulators and semimetals give rise to highly unusual physical properties. Analogous topological effects have also been discussed in bosonic systems, but the novel phenomena typically occur only when the system is excited by finite-frequency probes. A mapping recently proposed by Kane and Lubensky [Nat. Phys. 10, 39 (2014)], however, establishes a closer correspondence. It relates the zero-frequency excitations of mechanical systems to topological zero modes of fermions that appear at the edges of an otherwise gapped system. Here we generalize the mapping to systems with an intrinsically gapless bulk. In particular, we construct mechanical counterparts of topological semimetals. The resulting gapless bulk modes are physically distinct from the usual acoustic Goldstone phonons, and appear even in the absence of continuous translation invariance. Moreover, the zero-frequency phonon modes feature adjustable momenta and are topologically protected as long as the lattice coordination is unchanged. Such protected soft modes with tunable wavevector may be useful in designing mechanical structures with fault-tolerant properties.


Science Advances | 2016

Filling-enforced quantum band insulators in spin-orbit coupled crystals

Hoi Chun Po; Haruki Watanabe; Michael P. Zaletel; Ashvin Vishwanath

Quantum effects produce a band insulator with fewer electrons than permitted in any classical picture. An early triumph of quantum mechanics was the explanation of metallic and insulating behavior based on the filling of electronic bands. A complementary, classical picture of insulators depicts electrons as occupying localized and symmetric Wannier orbitals that resemble atomic orbitals. We report the theoretical discovery of band insulators for which electron filling forbids such an atomic description. We refer to them as filling-enforced quantum band insulators (feQBIs) because their wave functions are associated with an essential degree of quantum entanglement. Like topological insulators, which also do not admit an atomic description, feQBIs need spin-orbit coupling for their realization. However, they do not necessarily support gapless surface states. Instead, the band topology is reflected in the insulating behavior at an unconventional filling. We present tight binding models of feQBIs and show that they only occur in certain nonsymmorphic, body-centered cubic crystals.


Nature Physics | 2017

Topological materials discovery using electron filling constraints

Ru Chen; Hoi Chun Po; Jeffrey B. Neaton; Ashvin Vishwanath

Electron filling criterion can guide the search for new topological materials with nodal-point or nodal-line Fermi surfaces.


Bulletin of the American Physical Society | 2016

Chiral floquet phases of many-body localized bosons

Hoi Chun Po; Lukasz Fidkowski; Takahiro Morimoto; Andrew C. Potter; Ashvin Vishwanath


Physical Review B | 2017

Floquet topological phases protected by time glide symmetry

Takahiro Morimoto; Hoi Chun Po; Ashvin Vishwanath


Physical Review Letters | 2017

Lattice Homotopy Constraints on Phases of Quantum Magnets

Hoi Chun Po; Haruki Watanabe; Chao-Ming Jian; Michael P. Zaletel


Physical Review B | 2017

Radical chiral Floquet phases in a periodically driven Kitaev model and beyond

Hoi Chun Po; Lukasz Fidkowski; Ashvin Vishwanath; Andrew C. Potter

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Andrew C. Potter

Massachusetts Institute of Technology

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T. Senthil

Massachusetts Institute of Technology

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