Hong-Sick Park

A unified 7.5nm dash-type confined cell for high performance PRAM device

We present a new-type confine structure within 7.5 nm width dash-contact for sub 20 nm generation PRAMs. Phase change material (PCM) by chemical vapor deposition (CVD) was perfectly filled in a 7.5 nm width dash-contact without void along with 30 nm depth. By adopting confined CVD-PCM, we were able to reduce the reset current below ~160 muA and to obtain high reliability. In addition, the programming time of dash-confined cell was much improved to 50 ns due to volume confinement of PCM cell. Consequently, we firstly demonstrate the high performance of the 7.5 nm width confined cell, which is the smallest size close to physical limit.

The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs

The effects of TaN metal-gate thickness on the electrical characteristics of poly-Si/metal-gate/HfSiON MOSFETs have been investigated. Too thin TaN was reactive with poly-Si gate, which led to the formation of Si-doped metal gate. As a result, the work function of the metal gate was reduced and the capacitance increased while generating traps in HfSiON films. P-MOSFET using poly-Si/TaN gate with channel engineering in strained-Si substrate showed threshold voltage of - 0.45 V at W/L= 10/1 /spl mu/m and improved MOSFET characteristics.

Luminous efficacy evaluation of XeI excimer for ACPDP

We demonstrate for the first time a luminous efficacy of a Xel excimer PDP comparable to that of a conventional Xe/Ne-mixture PDP using 6-in. ACPDPs. For the conventional PDP as a reference, a mixture of Xe:Ne = 4:96(%) with a total gas pressure of 60.0 kPa (450 torr) was used. For the Xel PDP, Ne-buffered mixtures with the same total gas pressure were tried, and a mixture of I 2 :Xe:Ne = 0.02:7.1:92.88 (%) showed an efficacy as high as that of the conventional Xe PDP.

P-62: Dielectric Material Properties of CaF2 for AC PDPs

We present the discharge characteristics of new dielectric layers in AC- plasma display panels. Studies for dielectric layer of plasma display panels are performed using CaF2. In this paper, the real panel using CaF2 dielectric layer is researched for material characteristics and discharge characteristics, and a color panel is demonstrated.