Hong Zhi Liu
National Cheng Kung University
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Publication
Featured researches published by Hong Zhi Liu.
IEEE Microwave and Wireless Components Letters | 2008
Chen Kuo Chu; Hou Kuei Huang; Hong Zhi Liu; Che Hung Lin; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang
An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Omega input and output impedance. Based on a 0.35 mum gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.
IEEE Microwave and Wireless Components Letters | 2007
Chen Kuo Chu; Hou Kuei Huang; Hong Zhi Liu; Che Hung Lin; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang
This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved
IEEE Microwave and Wireless Components Letters | 2007
Che Hung Lin; Hong Zhi Liu; Chen Kuo Chu; Hou Kuei Huang; Chi Chuan Liu; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang
A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554mm2 (3.64mmtimes2.35mm) is designed to fully match 50-Omega input and output impedance. Under 8V and 2000mA dc bias condition, the PA deliver 38.1dBm (6.5W) saturated output power, 10.5-dB small signal gain and peak power added efficiency of 24.6% from 13.6 to 14.2GHz. This MMIC also achieved the best power densities (760mW/mm2) at Ku band reported to date
IEEE Microwave and Wireless Components Letters | 2005
Chen Kuo Chu; Hou Kuei Huang; Hong Zhi Liu; Ray Jay Chiu; Che Hung Lin; Chih Cheng Wang; Mau Phon Houng; Yeong Her Wang; Chuan Chien Hsu; W. Wu; Chang Luen Wu; Chian Sern Chang
A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 50/spl Omega/ input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4dB small-signal gain and 34dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5GHz is also achieved.
ieee gallium arsenide integrated circuit symposium | 2002
Hong Zhi Liu; Chih Cheng Wang; Yeong Her Wang; J.W. Huang; Ching Hsueh Chang; W. Wu; Chang-Luen Wu; Chin Sheng Chang
In this paper, a Ku-band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU (outdoor unit) applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.
compound semiconductor integrated circuit symposium | 2006
Chien Huang Lin; Hong Zhi Liu; Chen Kuo Chu; Hui Ling Huang; Yeong Her Wang; Chien-Chih Liu; Ching Hsueh Chang; Chang-Luen Wu
A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for Ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 mm times 2.46 mm) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 Watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm2) at Ku band reported to date
IEEE Microwave and Wireless Components Letters | 2006
Che Hung Lin; Hong Zhi Liu; Chen Kuo Chu; Hou Kuei Huang; Chi Chuan Liu; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang
A fully matched, 2-W high linearity amplifier monolithic microwave integrated circuit, by using quasi-enhancement mode technology of AlGaAs/InGaAs/ GaAs pseudomorphic high electron mobility transistors, is demonstrated for wireless local area network applications. At Vgs= 0 V, Vds= 5 V, this power amplifier has achieved 14-dB small-signal gain, 33-dBm output power at 1-dB gain compression point, and 34.5-dBm saturated output power with 35% power added efficiency at 5.8 GHz. Moreover, high-linearity with 45.2-dBm third-order intercept point is also achieved
compound semiconductor integrated circuit symposium | 2004
Chen Kuo Chu; Hsiang-Ming Huang; Hong Zhi Liu; Ray Jay Chiu; Chien Huang Lin; Chih Cheng Wang; Yeong Her Wang; Chuan Chien Hsu; W. Wu; Chang-Luen Wu; Chin Sheng Chang
A X-band 8-watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for the active phase radar applications is demonstrated. This amplifier is designed to fully match 50 ohm input and output impedance. With 8 volts and 850 mA DC bias condition, 17.5 dB small-signal gain, 39.3 dBm (8.5 watt) 2-dB gain compression power with 33.7% power-added efficiency and 40 dBm (10 watt) saturation power from 9.3 to 10.4 GHz can be achieved.
IEEE Microwave and Wireless Components Letters | 2006
Hong Zhi Liu; Che Hung Lin; Chen Kuo Chu; Hou Kuei Huang; Mau Phon Houng; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang
In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.
international conference on solid state and integrated circuits technology | 2006
Che Hung Lin; Hong Zhi Liu; Chen Kuo Chu; Hou Kuei Huang; Chi Chuan Liu; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang
This paper describes the design and measured performance of a single-balanced mixer using a planar Marchand balun for operation in the microwave and millimeter-wave bands. The MMIC was fabricated on AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 2.11 times 1.54 mm2. The best up-conversion loss is 8 dB with an LO-to-RF isolation better than 30 dB
