Hongwoo Baek

Enhanced carrier transport along edges of graphene devices.

The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance enhancement at the edges of GDs using scanning gate microscopy. This result is explained by our theoretical model of the opening of an additional conduction channel localized at the edges by depleting accumulated charge by the tip.

Scanning Tunneling Spectroscopy of Proximity Superconductivity in Epitaxial Multilayer Graphene.

We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting energy gap with increasing separation from the graphene-aluminum edges. The spectra were well described by Bardeen-Cooper-Schrieffer (BCS) theory. The decay length for the superconducting energy gap in graphene was determined to be greater than 400 nm. Deviations in the exponentially decaying energy gap were also observed on a much smaller length scale of tens of nanometers.

Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure.

Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk.

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states | NIST

Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked surface states; but they only exist on specific crystal planes that are protected by crystal reflection symmetry. Here, we report an ultra-low temperature scanning tunneling microscopy and spectroscopy study on topological crystalline insulator SnTe nanoplates grown by molecular beam epitaxy. We observed quasiparticle interference patterns on the SnTe (001) surface that can be interpreted in terms of electron scattering from the four Fermi pockets of the topological crystalline insulator surface states in the first surface Brillouin zone. A quantitative analysis of the energy dispersion of the quasiparticle interference intensity shows two high energy features related to the crossing point beyond the Lifshitz transition when the two neighboring low energy surface bands near the point merge. A comparison between the experimental and computed quasiparticle interference patterns reveals possible spin texture of the surface states.

Strain engineering a 4a×√3a charge-density-wave phase in transition-metal dichalcogenide 1T−VSe2

We report a rectangular charge density wave (CDW) phase in strained 1T-VSe2 thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a×√3a periodicity, as opposed to the previously reported hexagonal 4a×4a structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same 4a×√3a CDW periodicity and an energy gap of 2ΔCDW = (9.1 ± 0.1) meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both 4a×4a and 4a×√3a structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings.

Creating nanostructured superconductors on demand by local current annealing

Superconductivity results from a Bose condensate of Cooper-paired electrons with a macroscopic quantum wavefunction. Dramatic effects can occur when the region of the condensate is shaped and confined to the nanometer scale. Recent progress in nanostructured superconductors has revealed a route to topological superconductivity, with possible applications in quantum computing. However, challenges remain in controlling the shape and size of specific superconducting materials. Here, we report a new method to create nanostructured superconductors by partial crystallization of the half-Heusler material, YPtBi. Superconducting islands, with diameters in the range of 100 nm, were reproducibly created by local current annealing of disordered YPtBi in the tunneling junction of a scanning tunneling microscope (STM). We characterize the superconducting island properties by scanning tunneling spectroscopic measurements to determine the gap energy, critical temperature and field, coherence length, and vortex formations. These results show unique properties of a confined superconductor and demonstrate that this new method holds promise to create tailored superconductors for a wide variety of nanometer scale applications.