Hongxiang Wei

Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.

Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel magnetoresistance (TMR) in perpendicularly magnetized CoFeB/MgO/CoFeB MTJs can be achieved by both temperature and voltage. At a certain range of temperature, coercivity crossover between top and bottom magnetic layers is observed in which the TMR ratio of the MTJs is almost unmeasurable. Furthermore, the temperature range can be tuned reversibly by an electric voltage. Magnetization switching driven by the voltage reveals an unconventional phenomenon such that the voltage driven coercivity changes with temperature are quite different for top and bottom CoFeB layers. A model based on thermally-assisted domain nucleation and propagation is developed to explain the frequency and temperature dependence of coercivity. The present results of controlling the magnetization switching by temperature and voltage may provide an alternative route for novel applications of MTJs based spintronic devices.

Fabrication of spin-transfer nano-oscillator by colloidal lithography

We fabricate nanoscale spin-transfer oscillators (STOs) by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current-induced microwave emission with a large frequency tunability of 0.22GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require the sophisticated equipment (∼ million dollars per unit) and expensive lithography resist, while being cost-effective and easy to use in laboratory level. This will accelerate efforts to implement STO into on-chip integrated high-radio frequency applications.

Transport Properties in Sputtered CoFeB/MgAl 2 O 4 /CoFeB Magnetic Tunnel Junctions

CoFeB/MgAl2O4/CoFeB magnetic tunnel junctions (MTJs) with the barrier sputtered from sintered MgAl2O4 target have been successfully fabricated. Dependence of tunneling magnetoresistance (TMR) ratio on both MgAl2O4 deposition pressure and postannealing temperature has been studied. The TMR ratio of more than 50% at room temperature was obtained with an annealing temperature of 325 °C and MgAl2O4 deposition pressure of 1.3 Pa. Temperature dependence of resistance in both parallel and antiparallel configurations can be well fitted by the model based on direct elastic tunneling and magnon-assisted inelastic tunneling. Inelastic electron tunneling spectroscopy (IETS) at low temperature, exhibiting three peaks originating from zero-bias anomaly, interface magnons, and barrier phonons, were measured and compared with the results of AlOx and MgO-based MTJs. The IETS for all three types of MTJs shows quite similar peak positions for all kinds of elementary excitations except barrier phonons.

Realization of zero-field skyrmions with high-density via electromagnetic manipulation in Pt/Co/Ta multilayers

Taking advantage of the electron-current ability to generate, stabilize, and manipulate skyrmions prompts the application of skyrmion multilayers in room-temperature spintronic devices. In this study, the robust high-density skyrmions are electromagnetically generated from Pt/Co/Ta multilayers using Lorentz transmission electron microscopy. The skyrmion density is tunable and can be significantly enhanced. Remarkably, these generated skyrmions after optimized manipulation sustain at zero field with both the in-plane current and perpendicular magnetic field being switched off. The skyrmion generation and manipulation method demonstrated in this study opens up an alternative way to engineer skyrmion-based devices. The results also provide key data for further theoretical study to discover the nature of the interaction between the electric current and different spin configurations.

Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed.

Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

Direct laser-patterned ultra-wideband antennae with carbon nanotubes

Ultra-wideband (UWB), a radio transmission technology with wide bandwidth exceeding the minimum of 500 MHz or at least 20% of the center frequency, is a revolutionary approach for short-range high-bandwidth wireless communication. In this study, carbon nanotube (CNT) UWB antennas by direct laser-patterning technology have been successfully designed, fabricated and characterized. In contrast with traditional fabrication methods, the direct laser-patterning technology offers an exceptional potential for custom-designed, high-complexity and accuracy device fabrication. The “engraving” process on CNTs exposed to laser can be attributed to the bond breaking of C–C, evaporation of carbon atoms, and oxidation of CNTs by the oxygen molecules. Numerical analysis and experimental studies provide characteristics of CNT slot antennas with a wide impedance bandwidth (from 3.4 GHz to 14 GHz for S11 ≤ −10 dB), high average radiation efficiency (76%) and fractional bandwidth (121%) with small size of 30 × 30 mm2. The results indicate the advantages of laser-patterned UWB antennas based on carbon nanotubes, which paves the way for industrial applications, particularly in the world of consumer electronics.

Tailoring perpendicular magnetic anisotropy with graphene oxide membranes

Graphene oxide (GO) membranes have been widely explored for their excellent physical and chemical properties, and abundant functional groups. In this work, we report the improvement of the perpendicular magnetic anisotropy (PMA) of CoFeB thin films by applying a coating of GO membranes. We observe that the PMA of the CoFeB/MgAl–O stacks is strongly enhanced by the coating of GO membranes and even reaches 0.6 mJ m−2 at room temperature after an annealing process. The critical thickness of the membrane-coated CoFeB for switching the magnetization from the out-of-plane to the in-plane axis exceeds 1.6 nm. First-principle calculations are performed to investigate the contribution of the GO membranes to the magnetic anisotropy energy (MAE). Due to changes in the hybridization of 3d orbitals, varying the location of the C atomic layer with Co changes the contribution of the Co–C stacks to PMA. Thus, the large PMA achieved with GO membranes can be attributed to the orbital hybridization of the C and O atoms with the Co orbitals. These results provide a comprehensive understanding of the PMA and point towards opportunities to achieve multifunctional graphene-composite spintronic devices.

Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs) under various measurement temperatures. The large tunnel magneto-Seebeck (TMS) ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

A novel MEMS-based 13.56 MHz micro antenna for RFID application

Radio frequency identification (RFID) technology [1] is a wireless communication technology of automatic identifying the target objects using radio frequency signal. In recent years, RFID technology has been widely used in many areas, such as access control, public transportation systems, libraries and food safety traceability [2]-[5]. RFID system consists of three parts: reader, transponder and antenna [6]. The reader is a particular radio frequency (RF) data signal generation system, which is usually made as fixed or portable communication device. The transponder is a sensing device that senses the particular RF data signal and transmits the corresponding data signal back to the reader. The antenna is an energy transmission device, which is responsible for the transmission and reception of the data signal in the communication.