Hongyu An

Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

Spin-torque generator engineered by natural oxidation of Cu.

The spin Hall effect is a spin–orbit coupling phenomenon, which enables electric generation and detection of spin currents. This relativistic effect provides a way for realizing efficient spintronic devices based on electric manipulation of magnetization through spin torque. However, it has been believed that heavy metals are indispensable for the spin–torque generation. Here we show that the spin Hall effect in Cu, a light metal with weak spin–orbit coupling, is significantly enhanced through natural oxidation. We demonstrate that the spin–torque generation efficiency of a Cu/Ni81Fe19 bilayer is enhanced by over two orders of magnitude by tuning the surface oxidation, reaching the efficiency of Pt/ferromagnetic metal bilayers. This finding illustrates a crucial role of oxidation in the spin Hall effect, opening a route for engineering the spin–torque generator by oxygen control and manipulating magnetization without using heavy metals.

Spin current transport in ceramic: TiN thin film

The spin current transport property in a ceramic material TiN has been investigated at room temperature. By attaching TiN thin films on Ni20Fe80 with different thicknesses of TiN, the spin pumping experiment has been conducted, and the spin diffusion length in TiN was measured to be around 43 nm. Spin-torque ferromagnetic resonance has also been taken to investigate the spin Hall angle of TiN, which was estimated to be around 0.0052. This study on ceramic material provides a potential selection in emerging materials for spintronics application.

Current-induced magnetization switching using an electrically insulating spin-torque generator

This paper reports the first demonstration of current-induced magnetization switching using an ordinary insulator. Current-induced magnetization switching through spin-orbit torques is the fundamental building block of spin-orbitronics, which promises high-performance, low-power memory and logic devices. The spin-orbit torques generally arise from spin-orbit coupling of heavy metals. However, even in a heterostructure where a metallic magnet is sandwiched by two different insulators, a nonzero spin-orbit torque is expected because of the broken inversion symmetry; an electrical insulator can be a source of the spin-orbit torques. We demonstrate current-induced magnetization switching using an insulator. We show that oxygen incorporation into the most widely used spintronic material, Pt, turns the heavy metal into an electrically insulating generator of the spin-orbit torques, which enables the electrical switching of perpendicular magnetization in a ferrimagnet sandwiched by insulating oxides. We also show that the spin-orbit torques generated from the Pt oxide can be controlled electrically through voltage-driven oxygen migration. These findings open a route toward energy-efficient, voltage-programmable spin-orbit devices based on insulating metal oxides.

Spin-orbit torques in asymmetric Pt/Co/Pt structures

Abstract We have quantitatively studied the spin-orbit torque purely generated by the spin Hall effect in a wide range of temperatures by intensionally eliminating the Rashba spin-orbit torque using Pt/Co/Pt trilayers with asymmetric thicknesses of the top and bottom Pt layers. The vanishingly small contribution from the Rashba effect has been confirmed through the vector measurements of the current-induced effective fields. In order to precisely determine the value of the spin Hall torque, the complete cancelation of the spin Hall torque has been verified by fabricating symmetric Pt/Co/Pt structure on SiO2 and Gd3Ga5O12 (GGG) substrates. Despite of the complete cancelation on the GGG substrate, the spin Hall torque cannot be completely canceled out even when the top and bottom Pt layers have same thicknesses on the SiO2 substrate, which suggests that Pt/Co/Pt trilayers on a GGG substrate is a suitable system for precise measurements of the spin Hall torque. The result of the vector measurements on Pt/Co/Pt/GGG from 300 to 10 K shows that the spin Hall torque is almost independent of temperature, which is quantitatively reproduced under the assumption of the temperature-independent spin Hall angle of Pt.

Temperature dependence of Rashba-Edelstein magnetoresistance in Bi/Ag/CoFeB trilayer structures

We have investigated the recently discovered Rashba-Edelstein magnetoresistance (REMR) in Bi/Ag/CoFeB trilayer structures with different temperatures, Bi thicknesses, and magnetic fields via the angular-dependent magnetoresistance (ADMR) measurements. We found that the magnitude of the REMR shows a small variation with changing temperature, which is consistent with the previous work on the temperature evolution of the inverse Rashba-Edelstein effect. Furthermore, the ADMR measurements with different thicknesses of Bi layers and external magnetic fields revealed that the contribution from the field-dependent magnetoresistance is not negligibly small for thicker Bi films ( ≥10 nm) at low temperature.

Molecular engineering of Rashba spin-charge converter

Researchers report the discovery of a way for molecular engineering of Rashba spin-orbit devices. In heterostructures with broken inversion symmetry, the electrons’ motion is coupled to their spin through interface-driven spin-orbit coupling: the Rashba effect. The Rashba effect enables the interconversion between spin and charge currents, offering a variety of novel spintronic phenomena and functionalities. However, despite the significant progress in Rashba physics, controlling the spin-charge conversion in metallic heterostructures remains a major challenge. We show that molecular self-assembly provides a way to engineer the Rashba spin-charge converters. We demonstrate that magnetoresistance and voltage generation originating from the spin-charge conversion in metallic heterostructures can be manipulated by decorating the surface with self-assembled organic monolayers through the cooperative molecular field effect. We also demonstrate reversible phototuning of the spin-charge conversion through light-driven molecular transformations using a molecule that can photoisomerize between the trans and cis states. These findings, with the almost-infinite chemical tunability of organic monolayers, pave the way toward molecular engineering of spin-orbit devices.

Intrinsic Spin-Orbit Torque Arising from the Berry Curvature in a Metallic-Magnet/Cu-Oxide Interface

We report the observation of the intrinsic dampinglike spin-orbit torque (SOT) arising from the Berry curvature in metallic-magnet/CuO_{x} heterostructures. We show that a robust dampinglike SOT, an order of magnitude larger than a fieldlike SOT, is generated in the heterostructure despite the absence of the bulk spin-orbit effect in the CuO_{x} layer. Furthermore, by tuning the interfacial oxidation level, we demonstrate that the fieldlike SOT changes drastically and even switches its sign, which originates from oxygen-modulated spin-dependent disorder. These results provide important information for a fundamental understanding of the physics of the SOTs.