Horasdia Saragih

Effect of Growth Temperature on Cobalt-Doped TiO2 Thin Films Deposited on Si (100) Substrate by MOCVD Technique

Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth temperature on the structural and morphological quality of Co:TiO2 thin films. The structure of Co:TiO2 thin films were characterized by XRD while the morphology and the thickness of films were characterized by SEM. The XRD results reveal that all films show the anatase structure and the dominant orientation of anatase phase depends on the growth temperature. The grain size of crystal increases as the growth temperature increases. We also reveal that the growth rate of Co:TiO2 film has a maximum value at the growth temperature of 400°C.

Co-Doped TiO/sub 2/ Rutile Thin Films Deposited by MOCVD Method

Co-doped TiO2 thin films were grown on Si(100) substrates by MOCVD method using titanium (IV) isopropoxide [Ti(OCH(CH3)2)4] and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) cobalt (III), Co(TMHD)3 precursors. The growth parameters, crystal structure, ferromagnetic and electrical transport properties of thin films were investigated. Ferromagnetic behaviors of films were observed at room temperature. Magnetic and structural properties strongly depend on the Co concentration and the growth temperature. Epitaxial thin films with highest magnetic saturation were found on the films grown at temperature of 450 C. Resistivity as a function of temperature measurement shows that the films have semiconducting properties.