Horst Dr. Röschert

Application aspects of a positive tone deep UV resist

Abstract Current state of process capabilities and performance items of a recently developed chemically amplified positive tone deep UV (DUV) resist is presented. The material is based on three components: an α, α-bis (arylsulfonyl) diazomethane as phtoacid generator (PAG), an oligomeric N,O-acetal as dissolution inhibitor and a poly(vinylphenol) as matrix resin. Lithography aspects being of general interest to the process engineer such as resolution, linearity, exposure and development latitudes, depth of focus, thermal resistance and use of top antireflective coating (TARC) AZ Aquatar are addressed. Furthermore, progress in delay time stability is discussed.

Substituted polyhydroxystyrenes as matrix resins for chemically amplified deep-UV resist materials

Abstract Substituted poly(4-hydroxystyrene)s provide an interesting source of film forming, deep UV transparent, aqueous alkaline developable polymers with a broad potential for modification of their chemical and physical properties. After a review of their synthesis and physical properties, selected examples of their use in chemically amplified resist systems, both positive and negative, will be presented.