Hsi-Sheng Goan

Continuous quantum measurement of two coupled quantum dots using a point contact: A quantum trajectory approach

We obtain the finite-temperature unconditional master equation of the density matrix for two coupled quantum dots (CQDs) when one dot is subjected to a measurement of its electron occupation number using a point contact (PC). To determine how the CQD system state depends on the actual current through the PC device, we use the so-called quantum trajectory method to derive the zero-temperature conditional master equation. We first treat the electron tunneling through the PC barrier as a classical stochastic point process (a quantum-jump model). Then we show explicitly that our results can be extended to the quantum-diffusive limit when the average electron tunneling rate is very large compared to the extra change of the tunneling rate due to the presence of the electron in the dot closer to the PC. We find that in both quantum-jump and quantum-diffusive cases, the conditional dynamics of the CQD system can be described by the stochastic Schrodinger equations for its conditioned state vector if and only if the information carried away from the CQD system by the PC reservoirs can be recovered by the perfect detection of the measurements.

Global control and fast solid-state donor electron spin quantum computing

We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio T-2/T-ops approaching the 10(6) level.

Non-Markovian entanglement dynamics of quantum continuous variable systems in thermal environments

We study two continuous variable systems (or two harmonic oscillators) and investigate their entanglement evolution under the influence of non-Markovian thermal environments. The continuous variable systems could be two modes of electromagnetic fields or two nanomechanical oscillators in the quantum domain. We use the quantum open system method to derive the non-Markovian master equations of the reduced density matrix for two different but related models of the continuous variable systems. The two models both consist of two interacting harmonic oscillators. In model A, each of the two oscillators is coupled to its own independent thermal reservoir, while in model B the two oscillators are coupled to a common reservoir. To quantify the degrees of entanglement for bipartite continuous variable systems in Gaussian states, logarithmic negativity is used. We find that the dynamics of the quantum entanglement is sensitive to the initial states, the oscillator-oscillator interaction, the oscillator-environment interaction and the coupling to a common bath or to different, independent baths.

Dynamics of a mesoscopic charge quantum bit under continuous quantum measurement

We present the conditional quantum dynamics of an electron tunneling between two quantum dots subject to a measurement using a low transparency point contact or tunnel junction. The double dot system forms a single qubit and the measurement corresponds to a continuous in time readout of the occupancy of the quantum dot. We illustrate the difference between conditional and unconditional dynamics of the qubit. The conditional dynamics is discussed in two regimes depending on the rate of tunneling through the point contact: quantum jumps, in which individual electron tunneling current events can be distinguished, and a diffusive dynamics in which individual events are ignored, and the time-averaged current is considered as a continuous diffusive variable. We include the effect of inefficient measurement and the influence of the relative phase between the two tunneling amplitudes of the double dot/point contact system.

Electron exchange coupling for single-donor solid-state spin qubits

Intervalley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighboring phosphorus donor electron states in silicon [B. Koiller, X. Hu, and S. Das Sarma, Phys. Rev. Lett. 88, 027903 (2002); Phys. Rev. B 66, 115201 (2002)]. These same effects lead to an extreme sensitivity of the exchange energy on the relative orientation of the donor atoms, an issue of crucial importance in the construction of silicon-based spin quantum computers. In this article we calculate the donor electron exchange coupling as a function of donor position incorporating the full Bloch structure of the Kohn-Luttinger electron wave functions. It is found that due to the rapidly oscillating nature of the terms they produce, the periodic part of the Bloch functions can be safely ignored in the Heitler-London integrals as was done by Koiller, Hu, and Das Sarma, significantly reducing the complexity of calculations. We address issues of fabrication and calculate the expected exchange coupling between neighboring donors that have been implanted into the silicon substrate using an 15 keV ion beam in the so-called top down fabrication scheme for a Kane solid-state quantum computer. In addition, we calculate the exchange coupling as a function of the voltage bias on control gates used to manipulate the electron wave functions and implement quantum logic operations in the Kane proposal, and find that these gate biases can be used to both increase and decrease the magnitude of the exchange coupling between neighboring donor electrons. The zero-bias results reconfirm those previously obtained by Koiller, Hu, and Das Sarma.

Non-Markovian reduced dynamics and entanglement evolution of two coupled spins in a quantum spin environment

The exact quantum dynamics of the reduced density matrix of two coupled spin qubits in a quantum Heisenberg XY spin star environment in the thermodynamic limit at arbitrarily finite temperatures is obtained using a novel operator technique. In this approach, the transformed Hamiltonian becomes effectively Jaynes-Cumming like and thus the analysis is also relevant to cavity quantum electrodynamics. This special operator technique is mathematically simple and physically clear, and allows us to treat systems and environments that could all be strongly coupled mutually and internally. To study their entanglement evolution, the concurrence of the reduced density matrix of the two coupled central spins is also obtained exactly. It is shown that the dynamics of the entanglement depends on the initial state of the system and the coupling strength between the two coupled central spins, the thermal temperature of the spin environment and the interaction between the constituents of the spin environment. We also investigate the effect of detuning which in our model can be controlled by the strength of a locally applied external magnetic field. It is found that the detuning has a significant effect on the entanglement generation between the two spin qubits.

Progress in silicon-based quantum computing

We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a ‘top–down’ approach for near–term production of few–qubit demonstration devices and a ‘bottom–up’ approach for large–scale qubit arrays with sub–nanometre precision. The ‘top–down’ approach employs a low–energy (keV) ion beam to implant the phosphorus atoms. Single–atom control during implantation is achieved by monitoring on–chip detector electrodes, integrated within the device structure. In contrast, the ‘bottom–up’ approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single–electron transistors operating near the quantum limit provide fast read–out with spurious–signal rejection.

Ion trap transducers for quantum electromechanical oscillators

An enduring challenge for contemporary physics is to experimentally observe and control quantum behavior in macroscopic systems. We show that a single trapped atomic ion could be used to probe the quantum nature of a mesoscopic mechanical oscillator precooled to 4 K, and furthermore, to cool the oscillator with high efficiency to its quantum ground state. The proposed experiment could be performed using currently available technology.

Numerical Study of Hydrogenic Effective Mass Theory for an impurity P donor in Si in the presence of an electric field and interfaces

In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these variables affect the electron density of the donor electron. In particular, we calculate the resonance frequency of the donor nuclei as a function of these parameters. To do this we calculated the donor electron wave function variationally using an effective-mass Hamiltonian approach, using a basis of deformed hydrogenic orbitals. This approach was then extended to include the electric-field Hamiltonian and the silicon host geometry. We found that the phosphorous donor electron wave function was very sensitive to all the experimental variables studied in our work, and thus to optimize the operation of these devices it is necessary to control all parameters varied in this paper.

Time-dependent transport of electrons through a photon cavity

We use a non-Markovian master equation to describe the transport of Coulomb-interacting electrons through an electromagnetic cavity with one quantized photon mode. The central system is a finite-parabolic quantum wire that is coupled weakly to external parabolic quasi-one-dimensional leads at