Hu Guangxi

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schrodinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The centroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

Quantitative and Qualitative Analysis of Bose-Einstein Condensation in Harmonic Traps*

A simple and direct approach to handle summation is presented. With this approach, we analytically investigate Bose–Einstein condensation of ideal Bose gas trapped in an isotropic harmonic oscillator potential. We get the accurate expression of which is very close to (0.43% larger than) the experimental data. We find the curve of internal energy of the system vs. temperature has a turning point which marks the beginning of a condensation. We also find that there exists specific heat jump at the transition temperature, no matter whether the system is macroscopic or finite. This phenomenon could be a manifestation of a phase transition in finite systems.

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

In this paper, we study the effects of an unintended dopant in the channel on the current-voltage characteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Greens Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied.

Functional Integral Approach to Transition Temperature of a Homogeneous Imperfect Bose Gas

A functional integral approach (FIA) is introduced to calculate the transition temperature of a uniform imperfect Bose gas. With this approach we find that the transition temperature is higher than that of the corresponding ideal gas. We obtain the expression of the transition temperature shift as , where n is the density of particle number and a is the scattering length. The result has never been reported in the literature.

Functional Integral Approach to the Transition Temperature of Attractive Interacting Bose Gas in Traps

The functional integral approach (FIA) is introduced to study the transition temperature of an imperfect Bose gas in traps. An interacting model in quantum statistical mechanics is presented. With the model we study a Bose gas with attractive interaction trapped in an external potential. We obtain the result that the transition temperature of a trapped Bose gas will slightly shift upwards owing to the attractive interacting force. Successful application of the FIA to Bose systems is demonstrated.