Huadong Gan

Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature Ts = 250degC and with nominal Cr content x = 0.016 . However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both Ts and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.

Influence of magnetocrystalline anisotropy on magneto-optics in GaMnAs/InGaAs epilayer: Influence of magnetocrystalline anisotropy on magneto-optics in GaMnAs/InGaAs epilayer

National Basic Research Program of China [2006CB932801, 2007CB924903, 2007CB924904]; Chinese Academy of Sciences [KJCX.YW.W09]; National Natural Science Foundation of China [60836002, 10674130, 60521001]