Huaijin Zhang

Broadband Few‐Layer MoS2 Saturable Absorbers

The bandgaps of monolayer and bulk molybdenum sulfide (MoS2 ) result in that they are far from suitable for application as a saturable absorption device. In this paper, the operation of a broadband MoS2 saturable absorber is demonstrated by the introduction of suitable defects. It is believed that the results provide some inspiration in the investigation of two-dimensional optoelectronic materials.

Characterization of the laser crystal Nd:GdVO 4

Nd:GdVO4 crystal was grown by the Czochralski method. The absorption and fluorescence spectra of the crystal were measured at room temperature. The thermal expansion and the specific heat of the crystal were also measured. Laser outputs at 1.06 and 1.34 µm were achieved when a Nd:GdVO4 crystal sample with a high Nd doping concentration was pumped by a low-power laser diode (LD) at 808.5 nm, and visible green and red laser outputs of intracavity frequency doubling at 0.53 and 0.67 µm were also achieved when nonlinear KTiOPO4 and LiB3O5 crystal, respectively, were used. The highly Nd-doped Nd:GdVO4 crystal was pumped by a high-power LD, and a greater than 5-W laser output power at 1.06 µm was obtained. A low-Nd-doping concentration Nd:GdVO4 crystal sample was pumped by a high-power LD, yielding laser output powers at 1.06 and 0.53 µm; 0.53-µm green laser output was obtained when a KTiOPO4 crystal was used, and the output beam’s values were M2=1.76 at an output power of 14.3 W at 1.06 µm and M2=1.55 at an output power of 3.3 W at 0.53 µm. Acousto-optical Q-switched laser outputs at 1.06 and 0.53 µm were also achieved. A thermal lens made from a Nd:GdVO4 crystal was measured; it was weaker than that of a Nd:YVO4 crystal. Some important material parameters, such as temperature-induced changes in refractive index, material constant, thermal-stress resistance figure of merit, and power per unit length at the stress fracture limit, have been estimated.

Optical and laser properties of Nd:GdVO4 crystal

Abstract Nd-doped gadolinium vanadate Nd:GdVO 4 crystal with large sizes and good optical quality has been grown by Czochralski method. When the Judd–Ofelt theory of parity-forbidden electric-dipole transitions of rare earth ions on non-centrosymmetric sites is applied to the Nd:GdVO 4 , it results in a good fit on the absorption of the crystal. The spectral parameters of Nd:GdVO 4 crystal have indicated that it is an excellent candidate laser material. The three intensity parameters Ω t are fitted as 12.629×10 −20 , 4.828×10 −20 and 8.425×10 −20 cm 2 at t =2, 4 and 6, respectively. In laser experiment, the highest output power of up to 14.3 W at 1.06 μm has been achieved with a 4 mm thick Nd:GdVO 4 crystal sample when it is pumped by a 26 W cw fiber-coupled laser-diode array. The light–light conversion efficiency is 55%, and the average slope efficiency is 62%.

Continuous-wave and pulsed laser performance of Nd:LuVO4 crystal.

Received August 11, 2003 We report continuous-wave and actively Q-switched laser performance achieved with Nd:LuVO4 crystal for the 4F(3/2) --> 4I(1/2) transition (corresponding wavelength of 1065.8 nm) under high-power diode pumping. Continuous-wave output power of 12.55 W is obtained with an optical conversion efficiency of 50.2%. In actively Q-switched operation the average output power reaches 5.42 W at a pulse repetition frequency of 40 kHz with 18 W of pump power incident upon the crystal, yielding an optical conversion efficiency of 30.1%. The pulse energy and peak power reach 138 microJ and 16.2 kW, respectively, at a pulse repetition frequency of 25 kHz under a pump power of 14.2 W; the pulse duration is 8.5 ns.

High-efficiency continuous-wave Raman conversion with a BaWO 4 Raman crystal

We report a high-efficiency cw Raman conversion with a BaWO(4) Raman crystal in a diode-end-pumped Nd:YVO(4) laser. The Raman threshold is as low as 3.6 W of diode power at 808 nm. The highest output power obtained at the 1,180 nm first-order Stokes line is 3.36 W under the diode power of 25.5 W, corresponding to a slope efficiency of 15.3% and a diode-to-Stokes optical conversion efficiency of 13.2%. The intracavity Raman conversion efficiency is 21.5% with respect to the available output of the 1,064 nm fundamental.

Diode-pumped mode-locked Yb:YCOB laser generating 35 fs pulses

Direct sub-50-fs pulse generation is demonstrated with a mode-locked Yb:YCa4O(BO3)3 laser. With external compression, pulses as short as 35 fs are generated at 1055 nm. The oscillator operating at a repetition rate of 95 MHz is pumped by a two-section distributed Bragg reflector tapered diode laser and mode locked by a semiconductor saturable absorber mirror. The onset of self-Raman-conversion for pulse spectral bandwidths exceeding 40 nm (FWHM) is observed.

Continuous-wave laser performance of Nd:LuVO 4 crystal operating at 1.34 µm

A laser-diode-array end-pumped Nd:LuVO4 crystal continuous-wave (cw) laser operating at 1.34 µm has been demonstrated. The maximum cw output power of 1.85 W was obtained at the incident pump power of 17 W for a c-cut 0.5 at. % Nd-doped LuVO4 crystal sample, giving the corresponding optical conversion efficiency of 10.88% and a slope efficiency of 13.5%. Laser experiments of Nd3+ concentration of 0.5 and 0.9 at. % a-cut crystal LuVO4 samples were also investigated; due to the strong excited-state absorption of Nd:LuVO4 at 1.34 µm, the output power was limited.

Diode-pumped continuous-wave Nd:LuVO4 laser operating at 916 nm.

We realized an efficient diode-pumped Nd:LuVO4 continuous-wave (CW) laser operating at 916 nm. Laser experiments with 0.5at. % Nd-doped Nd:LuVO4 crystals of various lengths and cutting directions were also investigated. The maximum output power of 930 mW was obtained with a slope efficiency of 27.2% and an optical conversion efficiency of 20.8% at the absorbed pump power of 4.5 W. The laser experiment shows that Nd:LuVO4 crystal can be used for an efficient diode-pumped laser system.

High-power dual-wavelength laser with disordered Nd:CNGG crystals

We demonstrate the high-power dual-wavelength laser output with disordered Nd:CNGG laser crystals. Continuous-wave output power of 4.03 W was obtained under the incident pump power of 15.62 W. In the passively Q-switched operation, the shortest pulse width, largest pulse energy, and highest peak power were achieved to be 12.9 ns, 173.16 microJ, and 12.3 kW, respectively, with Cr(4+):YAG crystals as the saturable absorbers. By spectral analysis, the output lasers were found to have dual wavelengths. We believed that the passively Q-switched dual-wavelength laser should be possible to be used as a source for the generation of terahertz radiation.

Enhancement of passive Q-switching performance with mixed Nd:Lu x Gd 1−x VO 4 laser crystals

Passive Q-switching operation has been demonstrated with a class of mixed Nd:Lu(x)Gd(1-x)VO(4) laser crystals. With respect to that obtained with Nd:GdVO(4), the passive Q-switching performance, including threshold, pulse energy, and peak power, was found to be greatly enhanced with the mixed vanadate crystals. The shortest pulse width of 6.2 ns, largest pulse energy of 192.5 microJ, and highest peak power of 31.1 kW were obtained at the incident pump power of 13.75 W with the mixed crystal for x=0.5.