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Dive into the research topics where Huang Lirong is active.

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Featured researches published by Huang Lirong.


Journal of The Optical Society of America B-optical Physics | 2010

Enhancement of gain recovery rate and cross-gain modulation bandwidth using a two-electrode quantum-dot semiconductor optical amplifier

Yu Yi; Huang Lirong; Xiong Meng; Tian Peng; Huang De-Xiu

A two-electrode quantum-dot semiconductor optical amplifier (QD-SOA) is proposed to enhance gain recovery rate and cross-gain modulation (XGM) bandwidth. In the theoretical model, electron and hole dynamics as well as the carrier diffusion are accounted for in the quantum-dot rate equations, which are solved with forward and backward propagation equations of signal and amplified spontaneous emission. The simulation results show that two-electrode QD-SOA can distribute injection current density nonuniformly to maintain carriers in carrier reservoirs of quantum dot sufficient along the entire cavity length of the semiconductor optical amplifier, thus making gain saturation dynamics dominated by spectral hole burning at lower bias current than common QD-SOA. Besides, distributing more current density in the second section of the two-electrode QD-SOA at higher bias can greatly accelerate gain recovery as well as expand the XGM bandwidth.


Optics Communications | 2003

Spectral broadening of ultrashort optical pulse due to birefringence in semiconductor optical amplifiers

Huang Lirong; Huang De-Xiu; Sun Jun-qiang; Liu Deming

The effect of birefringence on the spectrum characteristics of ultrashort optical pulse in semiconductor optical amplifier (SOA) is investigated. It is revealed that a considerable part of spectrum broadening arises from birefringence in SOA. The scheme of minimizing this bad effect is also discussed.


Chinese Physics Letters | 2011

Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules

Tian Peng; Huang Lirong; Yuan Xiu-hua; Huang De-Xiu

Self-assembled InAs quantum dot molecules are grown on GaAs substrates without following any special protocols by using metal-organic chemical vapor deposition. The effects of indium composition and the thickness of the InGaAs cap layer on the optical properties of InAs quantum dot molecules are investigated by photoluminescence. With increasing indium composition and thickness of the InGaAs cap layer, the ground-state wavelength of the emission spectrum redshifts and the peak intensity decreases. In addition, the structural and optical properties of quantum dots and quantum dot molecules are comparatively studied, and the results show that when quantum dots turn into quantum dot molecules, the emission wavelength red shifts.


Journal of Semiconductors | 2010

In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser

Wen Feng; Huang Lirong; Jiang Bo; Tong Liangzhu; Xu Wei; Liu Deming

The metal-organic chemical vapor deposition (MOCVD) growth of AlGaN/GaN distributed Bragg reflectors (DBR) with a reflection peak at 530 nm was in situ monitored using 633 nm laser reflectometry. Evolutions of in situ reflected reflectivity for different kinds of AlGaN/GaN DBR were simulated by the classical transfer matrix method. Two DBR samples, which have the same parameters as the simulated structures, were grown by MOCVD. The simulated and experimental results show that it is possible to evaluate the DBR parameters from the envelope shape of the in situ reflectivity spectrum. With the help of the 633 nm laser reflectometry, a DBR light emitting diode (LED) was grown. The room temperature photoluminescence spectra show that the reflection peak of the DBR in the LED is within the design region.


Journal of Semiconductors | 2013

The effects of current density ratio and reflectivity on the gain, saturation and noise characteristics of a two-section MQW RSOA

Xi Huali; Huang Lirong; Jiang Guiying

A 1.3 μm two-section multi-quantum well reflective semiconductor optical amplifier is designed and fabricated. The impacts of injection current density ratio and the reflectivity of the reflective facet on gain, saturation and noise characteristics are studied theoretically and experimentally. The results indicate that the gain and saturation power can be easily manipulated by changing the current density ratio; and better gain and noise characteristics can be obtained when the reflectivity is appropriately selected.


Journal of Semiconductors | 2009

Monolithic white LED based on AlxGa1−x N/InyGa1−yN DBR resonant-cavity

Chen Yu; Huang Lirong; Zhu Shanshan

A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been designed and studied. With the AlxGa1−xN/InyGa1−yN distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.


Chinese Physics Letters | 2009

Wavelength Red-Shift of Long Wavelength InGaN/GaN Multi-Quantum Well by Using an InGaN Underlying Layer

Huang Lirong; Wen Feng; Tong Liangzhu; Huang De-Xiu

Long-wavelength GaN based light-emitting diodes are of importance in full color displays, monolithic white light- emitting diodes and solid-state lighting, etc. However, their epitaxial growth faces great challenges because high indium (In) compositions of InGaN are difficult to grow. In order to enhance In incorporation and lengthen the emission wavelength of a InGaN/GaN multi-quantum well (MQW), we insert an InGaN underlying layer underneath the MQW. InGaN/GaN MQWs with various InGaN underlying layers, such as graded InyGa1−yN material with linearly increasing In content, or InyGa1−yN with fixed In content but different thicknesses, are grown by metal-organic chemical vapor deposition. Experimental results demonstrate the enhancement of In incorporation and the emission wavelength redshift by the insertion of an InGaN underlying layer.


Journal of Semiconductors | 2011

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

Wang Hanchao; Huang Lirong; Shi Zhongwei

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influenced by the distribution of the injection current density. By chang- ing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled.


Journal of Semiconductors | 2010

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Wen Feng; Liu Deming; Huang Lirong

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED.


Archive | 2013

Quantum dot molecular light emitting device

Tian Peng; Huang Lirong; Shi Zhongwei; Huang De-Xiu; Yuan Xiu-hua; Yan Lijie

Collaboration


Dive into the Huang Lirong's collaboration.

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Huang De-Xiu

Huazhong University of Science and Technology

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Liu Deming

Huazhong University of Science and Technology

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Tian Peng

Huazhong University of Science and Technology

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Shi Zhongwei

Huazhong University of Science and Technology

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Yu Yi

Huazhong University of Science and Technology

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Yuan Xiu-hua

Huazhong University of Science and Technology

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Chen Jun

Huazhong University of Science and Technology

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Chen Yu

Huazhong University of Science and Technology

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Li Pei-Li

Huazhong University of Science and Technology

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Sun Jun-qiang

Huazhong University of Science and Technology

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