Huang Yupeng

Research on a Novel High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch

A photoconductive semiconductor switch (PCSS) with a gap of 10 mm was fabricated from 0.6-mm deep semiinsulating GaAs. The reflecting film has been made on the electrode surface, and the antireflection film has been made on the opposite surface. The PCSS was triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm, and an optical pulsewidth of 25 ns. At a bias voltage of 6 kV, the calculated ON-state resistance of the PCSS with a reflecting film and an antireflection film was only 0.61 Ω. To increase the photocurrent of the PCSS, a PCSS with an interdigital electrode has been made, at a bias voltage of 2 kV, and the ON-state resistance was 0.35 Ω.