Huasong Liu

Anomalous power dependence of upconversion emissions in Gd2O3:Er3+ nanocrystals under diode laser excitation of 970 nm

Visible green and red upconversion (UC) emissions with anomalous power dependence were observed in Gd2O3:Er3+ nanocrystals at room temperature under diode laser excitation of 970 nm. The green and red UC radiations both yield an “s”-shape power dependence, in marked contrast to the quadratic ones of the bulk counterparts. A closed positive looping UC mechanism that differs from conventional PA mechanism is proposed to explain the observed five- or six-photon processes in the “s”-shape power dependence. Power dependence analysis of the 1.55u2002μm emissions from the I413/2 state experimentally demonstrates our proposed model.

Design of reflective filter based on metal-dielectric thin films for radiation wavelength of carbon dioxide

The radiation wavelength of the carbon dioxide is 4.3μm. It is a kind of background noise that affect the image contrast in infrared imaging system seriously. Mirror is an important optical element in infrared optical system. This paper intends to design a 4.3μm wavelength filter base on the mirror. So, it is called reflective filter. It can replace the original mirror in the infrared optical system in order to filter out the radiation wavelength of the carbon dioxide and enhance the image quality. The reflective filter consists of metal and dielectric films. The absorption of the Al film which is the underlayer has been induced by the outer side dielectric multilayer films at 4.3μm. And it will keep high reflectivity in other wavelength at the same time. The design result as follow was obtained after optimization design. The average reflectivity is about 98% in the range of 3.7-4.2μm and 4.4-4.8μm (reflection bands) and the reflectivity is less than 10% at 4.3μm (absorption band) when the incident angle is 45°. The reflection phase of the metal-dielectric films was analyzed. The electric field distribution of reflection bands and absorption band was shown respectively. At last, in order to filter out the peak as much as possible, the design method and result of absorption band widening of the reflective filter was shown. Compare the all dielectric transmission minus filter, the layer number of the reflective filter is fewer and the total thickness of the coating is lower. Therefore, the manufacturing process became easier. The reliability became higher. More important, a better parameter of filter was obtained.

Physical model of the infrared dielectric function of zinc sulfide

We apply the Gaussian-oscillator model of the infrared dielectric function of ZnS materials prepared by hot pressing (HP) and chemical vapor deposition (CVD). Chemical factor analysis of the 700 to 1300u2009cm−1 spectral range shows 3 oscillators in the HP material and 4 in that prepared by CVD. The origin of these oscillators is identified. In both materials, high-order transverse-optical (TO) and longitudinal-acoustic (LA) vibration modes are excited. In HP-ZnS, the four oscillators are related to the 3TO, 1TOu2009+u20092LA, 3LA, and 4LA modes. Only the first three are found in the CVD material. These results clarify the physical mechanisms of lattice absorption of ZnS in this spectral range.

Accuracy design of ultra-low residual reflection coatings for laser optics*

Refractive index inhomogeneity is one of the important characteristics of optical coating material, which is one of the key factors to produce loss to the ultra-low residual reflection coatings except using the refractive index inhomogeneity to obtain gradient-index coating. In the normal structure of antireflection coatings for center wavelength at 532 nm, the physical thicknesses of layer H and layer L are 22.18 nm and 118.86 nm, respectively. The residual reflectance caused by refractive index inhomogeneity (the degree of inhomogeneous is between −0.2 and 0.2) is about 200 ppm, and the minimum reflectivity wavelength is between 528.2 nm and 535.2 nm. A new numerical method adding the refractive index inhomogeneity to the spectra calculation was proposed to design the laser antireflection coatings, which can achieve the design of antireflection coatings with ppm residual reflection by adjusting physical thickness of the couple layers. When the degree of refractive index inhomogeneity of the layer H and layer L is −0.08 and 0.05 respectively, the residual reflectance increase from zero to 0.0769% at 532 nm. According to the above accuracy numerical method, if layer H physical thickness increases by 1.30 nm and layer L decrease by 4.50 nm, residual reflectance of thin film will achieve to 2.06 ppm. When the degree of refractive index inhomogeneity of the layer H and layer L is 0.08 and −0.05 respectively, the residual reflectance increase from zero to 0.0784% at 532 nm. The residual reflectance of designed thin film can be reduced to 0.8 ppm by decreasing the layer H of 1.55 nm while increasing the layer L of 4.94 nm.

Study on dielectric constant of SiO 2 thin film in infrared range 400cm -1 -4000cm -1

Dielectric constant study of SiO2 films by combining the Oscillator model with factorial analysis technology was demonstrated. Provide physics meaning for the reverse data process of dielectric constant.